Overview
The PBSS5350T, produced by Nexperia USA Inc., is a 50 V, 3 A PNP low VCEsat (BISS) transistor. This component is designed to offer high efficiency and reliability in various electronic applications. It is packaged in a SOT23 plastic surface-mounted package, making it suitable for a wide range of power management and switching applications. The transistor is known for its low collector-emitter saturation voltage (VCEsat) and corresponding low equivalent on-resistance (RCEsat), which contribute to reduced heat generation and improved overall efficiency.
Key Specifications
| Parameter | Symbol | Max. Unit | Conditions |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | −50 V | |
| Collector Current (DC) | IC | −2 A | |
| Repetitive Peak Collector Current | ICRP | −3 A | Pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25 |
| Equivalent On-Resistance | RCEsat | 135 mΩ | |
| Collector-Base Cut-Off Current | ICBO | −100 nA | VCB = −50 V; IE = 0 |
| Emitter-Base Cut-Off Current | IEBO | −100 nA | VEB = −5 V; IC = 0 |
| DC Current Gain | hFE | 200 | VCE = −2 V; IC = −100 mA |
Key Features
- Low collector-emitter saturation voltage (VCEsat) and corresponding low RCEsat, which reduces heat generation and improves efficiency.
- High collector current capability of up to 3 A.
- High collector current gain, ensuring reliable operation.
- Improved efficiency due to reduced heat generation.
- Lead-free and halogen-free according to Nexperia's definitions.
- Compliant with EU RoHS, CN RoHS, and ELV directives, ensuring environmental sustainability.
Applications
- Power management applications.
- Low and medium power DC/DC converters.
- Supply line switching.
- Battery chargers.
- Linear voltage regulation with low voltage drop-out (LDO).
Q & A
- What is the maximum collector-emitter voltage of the PBSS5350T transistor?
The maximum collector-emitter voltage (VCEO) is −50 V.
- What is the typical collector current of the PBSS5350T transistor?
The typical collector current (IC) is up to −2 A.
- What is the equivalent on-resistance (RCEsat) of the PBSS5350T transistor?
The equivalent on-resistance (RCEsat) is 135 mΩ.
- What are the key features of the PBSS5350T transistor?
The key features include low VCEsat, high collector current capability, high collector current gain, and improved efficiency due to reduced heat generation.
- Is the PBSS5350T transistor compliant with environmental regulations?
Yes, it is compliant with EU RoHS, CN RoHS, and ELV directives.
- What are the typical applications of the PBSS5350T transistor?
Typical applications include power management, DC/DC converters, supply line switching, battery chargers, and linear voltage regulation.
- What is the package type of the PBSS5350T transistor?
The transistor is packaged in a SOT23 plastic surface-mounted package.
- Does the PBSS5350T transistor contain hazardous substances?
No, it does not contain hazardous substances exceeding the limit requirements of relevant regulations such as REACH and RoHS.
- What is the DC current gain of the PBSS5350T transistor?
The DC current gain (hFE) is typically 200 at VCE = −2 V and IC = −100 mA.
- How does the PBSS5350T transistor contribute to efficiency in applications?
The transistor contributes to efficiency through its low VCEsat and corresponding low RCEsat, which reduce heat generation.
