PBSS5350T,215
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Nexperia USA Inc. PBSS5350T,215

Manufacturer No:
PBSS5350T,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 50V 2A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBSS5350T,215 is a high-performance PNP low VCEsat (BISS) transistor manufactured by Nexperia USA Inc. This transistor is designed to offer low collector-emitter saturation voltage and high collector current capability, making it suitable for a variety of applications requiring efficient and reliable switching.

Key Specifications

ParameterValue
Transistor TypePNP
Collector-Emitter Voltage (VCE)50 V
Collector Current (IC)3 A
Collector-Emitter Saturation Voltage (VCEsat)Low VCEsat
Frequency (fT)100 MHz
Power Dissipation (Ptot)540 mW
Package TypeSurface Mount TO-236AB

Key Features

  • Low collector-emitter saturation voltage (VCEsat) and corresponding low RCE(sat)
  • High collector current capability of up to 3 A
  • High collector current gain
  • Surface mount TO-236AB package for easy integration into modern PCB designs

Applications

The PBSS5350T,215 transistor is suitable for various applications that require efficient switching and high current handling, such as:

  • Power management and switching circuits
  • Automotive systems
  • Industrial control systems
  • Consumer electronics requiring high reliability and efficiency

Q & A

  1. What is the collector-emitter voltage rating of the PBSS5350T,215 transistor? The collector-emitter voltage rating is 50 V.
  2. What is the maximum collector current of the PBSS5350T,215 transistor? The maximum collector current is 3 A.
  3. What is the package type of the PBSS5350T,215 transistor? The package type is Surface Mount TO-236AB.
  4. What is the frequency rating of the PBSS5350T,215 transistor? The frequency rating is 100 MHz.
  5. What is the power dissipation of the PBSS5350T,215 transistor? The power dissipation is 540 mW.
  6. Why is the PBSS5350T,215 transistor known for its efficiency? It is known for its low collector-emitter saturation voltage (VCEsat) and corresponding low RCE(sat), which contribute to its efficiency.
  7. In what types of applications is the PBSS5350T,215 transistor commonly used? It is commonly used in power management and switching circuits, automotive systems, industrial control systems, and consumer electronics.
  8. What are the benefits of using a PNP low VCEsat transistor like the PBSS5350T,215? The benefits include low power loss, high current handling, and high reliability.
  9. How is the PBSS5350T,215 transistor mounted? It is mounted on a printed-circuit board using a surface mount TO-236AB package.
  10. What are the operating conditions for the PBSS5350T,215 transistor under pulsed conditions? The transistor is operated under pulsed conditions with a pulse width tp ≤ 100 ms and a duty cycle δ ≤ 0.25.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):50 V
Vce Saturation (Max) @ Ib, Ic:390mV @ 300mA, 3A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 1A, 2V
Power - Max:540 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Same Series
PBSS5350TVL
PBSS5350TVL
PBSS5350T/SOT23/TO-236AB

Similar Products

Part Number PBSS5350T,215 PBSS4350T,215 PBSS5250T,215 PBSS5320T,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Transistor Type PNP NPN PNP PNP
Current - Collector (Ic) (Max) 2 A 2 A 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 20 V
Vce Saturation (Max) @ Ib, Ic 390mV @ 300mA, 3A 370mV @ 300mA, 3A 300mV @ 100mA, 2A 300mV @ 300mA, 3A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 2V 300 @ 1A, 2V 200 @ 1A, 2V 200 @ 1A, 2V
Power - Max 540 mW 540 mW 480 mW 540 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB TO-236AB TO-236AB

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