PBSS5250T,215
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Nexperia USA Inc. PBSS5250T,215

Manufacturer No:
PBSS5250T,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 50V 2A TO236AB
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The PBSS5250T,215 is a 50 V, 2 A PNP low VCEsat (BISS) transistor manufactured by Nexperia. This transistor is housed in a compact SOT23 plastic package, making it ideal for applications where space is limited. It is designed to offer ultra-low VCEsat and RCEsat parameters, which contribute to higher efficiency and reduced heat generation. The PBSS5250T,215 is AEC-Q101 qualified, ensuring its reliability and suitability for automotive and other demanding applications.

Key Specifications

ParameterValue
Type numberPBSS5250T
PackageSOT23
Package size (mm)2.9 x 1.3 x 1
Channel typePNP
Ptot [max] (mW)480.0
VCEO [max] (V)50.0
IC [max] (A)2.0
ICM [max] (A)3.0
hFE [min]200.0
fT [min] (MHz)100.0
RCEsat@IC [max] (mΩ)150.0
VCEsat [max] (mV)300.0

Key Features

  • Ultra-low VCEsat and RCEsat parameters for higher efficiency and reduced heat generation.
  • High collector current capability: IC and ICM.
  • AEC-Q101 qualified for automotive applications.
  • Cost-effective alternative to MOSFETs in specific applications.
  • Compact SOT23 package, reducing printed-circuit board requirements and enhancing design flexibility.

Applications

  • Power management: DC/DC converters, supply line switching.
  • Battery chargers.
  • LCD backlighting.
  • Peripheral drivers.
  • Driver in low supply voltage applications (e.g., lamps and LEDs).

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the PBSS5250T,215 transistor?
    The maximum collector-emitter voltage (VCEO) is 50 V.
  2. What is the package type of the PBSS5250T,215 transistor?
    The transistor is housed in a SOT23 plastic package.
  3. What are the key benefits of the ultra-low VCEsat and RCEsat parameters?
    The ultra-low VCEsat and RCEsat parameters lead to higher efficiency and reduced heat generation.
  4. Is the PBSS5250T,215 transistor suitable for automotive applications?
    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.
  5. What are some common applications of the PBSS5250T,215 transistor?
    Common applications include power management, battery chargers, LCD backlighting, peripheral drivers, and low supply voltage applications.
  6. How does the compact SOT23 package benefit the design?
    The compact SOT23 package reduces printed-circuit board requirements and enhances design flexibility.
  7. What is the maximum collector current (IC) of the PBSS5250T,215 transistor?
    The maximum collector current (IC) is 2 A.
  8. What is the minimum current gain (hFE) of the PBSS5250T,215 transistor?
    The minimum current gain (hFE) is 200.
  9. Can the PBSS5250T,215 transistor be used as a cost-effective alternative to MOSFETs?
    Yes, it can be used as a cost-effective alternative to MOSFETs in specific applications.
  10. Where can I find more detailed technical information about the PBSS5250T,215 transistor?
    You can find detailed technical information in the datasheet and application notes available on Nexperia's official website.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):50 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 100mA, 2A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 1A, 2V
Power - Max:480 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Similar Products

Part Number PBSS5250T,215 PBSS5350T,215 PBSS5220T,215 PBSS5230T,215 PBSS5240T,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active
Transistor Type PNP PNP PNP PNP PNP
Current - Collector (Ic) (Max) 2 A 2 A 2 A 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 20 V 30 V 40 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 100mA, 2A 390mV @ 300mA, 3A 225mV @ 200mA, 2A 350mV @ 200mA, 2A 350mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 2V 200 @ 1A, 2V 200 @ 1A, 2V 200 @ 1A, 2V 210 @ 1A, 2V
Power - Max 480 mW 540 mW 480 mW 480 mW 480 mW
Frequency - Transition 100MHz 100MHz 100MHz 200MHz 200MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB

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