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PBSS5220T,215
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Nexperia USA Inc. PBSS5220T,215

Manufacturer No:
PBSS5220T,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 20V 2A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBSS5220T,215 is a PNP low VCEsat transistor manufactured by Nexperia USA Inc. This transistor is housed in a small SOT23 Surface-Mounted Device (SMD) plastic package, making it suitable for a variety of applications where space is limited. It is known for its high collector current capability and low collector-emitter saturation voltage, which contributes to higher efficiency and less heat generation. The PBSS5220T,215 is qualified according to AEC-Q101, making it recommended for use in automotive applications as well as other demanding environments.

Key Specifications

Type numberPackageVCEO [max] (V)IC [max] (A)ICM [max] (A)hFE [min]fT [min] (MHz)RCEsat@IC [max] (mΩ)VCEsat [max] (mV)
PBSS5220T-QSOT23-20.0-2.0-3.0225.0100.0113.0-250.0

Key Features

  • Low collector-emitter saturation voltage (VCEsat) for higher efficiency and less heat generation.
  • High collector current capability (IC and ICM).
  • Qualified according to AEC-Q101, suitable for automotive applications.
  • Compact SOT23 package for space-saving designs.
  • High current gain (hFE) and transition frequency (fT) for reliable performance.

Applications

  • DC-to-DC conversion.
  • Supply line switching.
  • Battery chargers.
  • LCD backlighting.
  • Drivers in low supply voltage applications (e.g., lamps and LEDs).
  • Inductive load drivers (e.g., relays, buzzers, and motors).
  • Automotive applications due to AEC-Q101 qualification.

Q & A

  1. What is the package type of the PBSS5220T,215 transistor?
    The PBSS5220T,215 transistor is housed in a SOT23 Surface-Mounted Device (SMD) plastic package.
  2. What is the maximum collector-emitter voltage (VCEO) of the PBSS5220T,215?
    The maximum collector-emitter voltage (VCEO) is -20.0 V.
  3. What is the maximum collector current (IC) of the PBSS5220T,215?
    The maximum collector current (IC) is -2.0 A.
  4. Is the PBSS5220T,215 suitable for automotive applications?
    Yes, the PBSS5220T,215 is qualified according to AEC-Q101, making it suitable for automotive applications.
  5. What are some common applications of the PBSS5220T,215 transistor?
    Common applications include DC-to-DC conversion, supply line switching, battery chargers, LCD backlighting, and inductive load drivers.
  6. What is the significance of the low VCEsat in the PBSS5220T,215 transistor?
    The low VCEsat contributes to higher efficiency and less heat generation.
  7. How does the PBSS5220T,215 transistor handle high current requirements?
    The transistor has high collector current capability (IC and ICM) to handle high current requirements.
  8. What is the transition frequency (fT) of the PBSS5220T,215 transistor?
    The transition frequency (fT) is 100.0 MHz.
  9. Can the PBSS5220T,215 be used in low supply voltage applications?
    Yes, it can be used as a driver in low supply voltage applications such as lamps and LEDs.
  10. Where can I find more detailed specifications and datasheets for the PBSS5220T,215?
    You can find detailed specifications and datasheets on the official Nexperia website or through distributors like Mouser, Digi-Key, and others.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):20 V
Vce Saturation (Max) @ Ib, Ic:225mV @ 200mA, 2A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 1A, 2V
Power - Max:480 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Similar Products

Part Number PBSS5220T,215 PBSS5240T,215 PBSS5320T,215 PBSS5230T,215 PBSS5250T,215 PBSS5120T,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active
Transistor Type PNP PNP PNP PNP PNP PNP
Current - Collector (Ic) (Max) 2 A 2 A 2 A 2 A 2 A 1 A
Voltage - Collector Emitter Breakdown (Max) 20 V 40 V 20 V 30 V 50 V 20 V
Vce Saturation (Max) @ Ib, Ic 225mV @ 200mA, 2A 350mV @ 200mA, 2A 300mV @ 300mA, 3A 350mV @ 200mA, 2A 300mV @ 100mA, 2A 250mV @ 50mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 2V 210 @ 1A, 2V 200 @ 1A, 2V 200 @ 1A, 2V 200 @ 1A, 2V 250 @ 500mA, 2V
Power - Max 480 mW 480 mW 540 mW 480 mW 480 mW 480 mW
Frequency - Transition 100MHz 200MHz 100MHz 200MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB

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