PBSS4320T,215
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Nexperia USA Inc. PBSS4320T,215

Manufacturer No:
PBSS4320T,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 20V 2A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBSS4320T,215 is a 20 V NPN low VCEsat transistor manufactured by Nexperia USA Inc. This transistor is designed to offer high efficiency and reliability, making it suitable for a variety of power management applications. It is packaged in a SOT23 (TO-236AB) plastic package, which is compact and surface-mountable, facilitating ease of integration into modern electronic designs.

Key Specifications

Type Number Package Size (mm) Channel Type Ptot (mW) VCEO [max] (V) IC [max] (mA) hFE [min] TJ [max] (°C) fT [min] (MHz) Automotive Qualified
PBSS4320T SOT23 2.9 x 1.3 x 1 NPN 300.0 20.0 2000.0 220.0 150 100.0 Yes

Key Features

  • Low Collector-Emitter Saturation Voltage (VCEsat): Ensures low power losses and high efficiency.
  • High Collector Current Capability: Supports high current applications up to 2 A.
  • High Collector Current Gain (hFE): Provides reliable and stable current amplification.
  • Improved Efficiency: Reduced heat generation due to low VCEsat and corresponding low RCEsat.
  • AEC-Q101 Qualified: Suitable for automotive applications, ensuring robustness and reliability.

Applications

  • Power Management: Ideal for low and medium power DC/DC converters, supply line switching, and battery chargers.
  • Linear Voltage Regulation: Suitable for low voltage drop-out (LDO) linear voltage regulators.
  • Automotive and Industrial: Used in various automotive and industrial applications due to its AEC-Q101 qualification.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the PBSS4320T transistor?

    The maximum collector-emitter voltage (VCEO) is 20 V.

  2. What is the package type of the PBSS4320T,215 transistor?

    The transistor is packaged in a SOT23 (TO-236AB) plastic package.

  3. What is the maximum collector current (IC) of the PBSS4320T transistor?

    The maximum collector current (IC) is 2000 mA (2 A).

  4. Is the PBSS4320T transistor AEC-Q101 qualified?

    Yes, the PBSS4320T transistor is AEC-Q101 qualified, making it suitable for automotive applications.

  5. What are the key features of the PBSS4320T transistor?

    The key features include low VCEsat, high collector current capability, high collector current gain, and improved efficiency due to reduced heat generation.

  6. What are the typical applications of the PBSS4320T transistor?

    Typical applications include power management, such as DC/DC converters, supply line switching, battery chargers, and linear voltage regulation with low voltage drop-out (LDO).

  7. Is the PBSS4320T transistor RoHS compliant?

    Yes, the PBSS4320T transistor is compliant with EU RoHS and Chinese RoHS regulations.

  8. What is the maximum junction temperature (TJ) of the PBSS4320T transistor?

    The maximum junction temperature (TJ) is 150°C.

  9. What is the minimum current gain (hFE) of the PBSS4320T transistor?

    The minimum current gain (hFE) is 220.

  10. Does the PBSS4320T transistor contain any hazardous substances?

    The transistor is lead-free and halogen-free according to Nexperia's definitions and complies with relevant regulations such as REACH and RoHS.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):20 V
Vce Saturation (Max) @ Ib, Ic:310mV @ 300mA, 3A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 1A, 2V
Power - Max:540 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Same Series
PBSS4320TVL
PBSS4320TVL
TRANS NPN 20V 2A TO236AB

Similar Products

Part Number PBSS4320T,215 PBSS4350T,215 PBSS5320T,215 PBSS4120T,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Transistor Type NPN NPN PNP NPN
Current - Collector (Ic) (Max) 2 A 2 A 2 A 1 A
Voltage - Collector Emitter Breakdown (Max) 20 V 50 V 20 V 20 V
Vce Saturation (Max) @ Ib, Ic 310mV @ 300mA, 3A 370mV @ 300mA, 3A 300mV @ 300mA, 3A 250mV @ 50mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 1A, 2V 300 @ 1A, 2V 200 @ 1A, 2V 300 @ 500mA, 2V
Power - Max 540 mW 540 mW 540 mW 480 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB TO-236AB TO-236AB

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