NX138BKHH
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Nexperia USA Inc. NX138BKHH

Manufacturer No:
NX138BKHH
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 380MA DFN0606-3
Delivery:
Payment:
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Product Introduction

Overview

The NX138BKHH is a high-performance N-channel Trench MOSFET produced by Nexperia USA Inc. This device is designed for power electronic applications, offering excellent current handling and low on-resistance characteristics. It is packaged in a leadless ultra-compact DFN0606-3 package, making it ideal for space-constrained designs.

Key Specifications

ParameterValue
Voltage Rating (Vds)60 V
Current Rating (Id)380 mA (Ta), 380 mW (Ta), 2.8 W (Tc)
Package TypeDFN0606-3
Threshold Voltage (Vth)Low threshold voltage
ESD Protection> 2 kV HBM
Switching SpeedVery fast switching

Key Features

  • Low threshold voltage for efficient operation
  • Very fast switching capabilities for high-frequency applications
  • Trench MOSFET technology for improved performance and reliability
  • ElectroStatic Discharge (ESD) protection greater than 2 kV HBM for enhanced robustness
  • Leadless ultra-compact DFN0606-3 package for space-saving designs

Applications

The NX138BKHH MOSFET is suitable for a variety of power electronic applications, including:

  • DC-DC converters
  • Load switches
  • Battery management systems
  • Automotive electronics (qualified to AEC-Q100/Q101 standards)
  • Industrial power management systems

Q & A

  1. What is the voltage rating of the NX138BKHH MOSFET?
    The voltage rating (Vds) of the NX138BKHH MOSFET is 60 V.
  2. What is the current rating of the NX138BKHH MOSFET?
    The current rating (Id) of the NX138BKHH MOSFET is 380 mA (Ta), with a power rating of 380 mW (Ta) and 2.8 W (Tc).
  3. What package type is the NX138BKHH MOSFET available in?
    The NX138BKHH MOSFET is available in a leadless ultra-compact DFN0606-3 package.
  4. What are the key features of the NX138BKHH MOSFET?
    The key features include low threshold voltage, very fast switching, Trench MOSFET technology, ESD protection greater than 2 kV HBM, and a leadless ultra-compact package.
  5. What applications is the NX138BKHH MOSFET suitable for?
    The NX138BKHH MOSFET is suitable for DC-DC converters, load switches, battery management systems, automotive electronics, and industrial power management systems.
  6. Does the NX138BKHH MOSFET have ESD protection?
    Yes, the NX138BKHH MOSFET has ESD protection greater than 2 kV HBM.
  7. What is the switching speed of the NX138BKHH MOSFET?
    The NX138BKHH MOSFET has very fast switching capabilities.
  8. Is the NX138BKHH MOSFET automotive qualified?
    Yes, the NX138BKHH MOSFET is qualified to AEC-Q100/Q101 standards for automotive applications.
  9. What is the benefit of the Trench MOSFET technology in the NX138BKHH?
    The Trench MOSFET technology in the NX138BKHH improves performance and reliability.
  10. How does the compact package of the NX138BKHH benefit design?
    The leadless ultra-compact DFN0606-3 package of the NX138BKHH saves PCB space and is ideal for space-constrained designs.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:2.3Ohm @ 380mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):380mW (Ta), 2.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN0606-3
Package / Case:3-XFDFN
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Similar Products

Part Number NX138BKHH NX138AKHH
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 380mA (Ta) 260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 2.5V, 10V
Rds On (Max) @ Id, Vgs 2.3Ohm @ 380mA, 10V 4.2Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.7 nC @ 10 V 0.6 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 20 pF @ 30 V 15 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 380mW (Ta), 2.8W (Tc) 360mW (Ta), 2.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN0606-3 DFN0606-3
Package / Case 3-XFDFN 3-XFDFN

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