Overview
The BUK9Y41-80E,115 is a high-performance N-channel logic level MOSFET produced by Nexperia USA Inc. This component is designed and qualified to the AEC Q101 standard, making it suitable for high-performance automotive applications. It utilizes TrenchMOS technology and is packaged in an LFPAK56 (Power SO8) package, which is known for its thermal efficiency and compact size.
Key Specifications
| Attribute | Description |
|---|---|
| Type number | BUK9Y41-80E |
| Package | LFPAK56; Power-SO8 (SOT669) |
| Channel type | N-channel |
| VDS [max] (V) | 80 |
| RDSon [max] @ VGS = 10 V (mΩ) | 41 |
| RDSon [max] @ VGS = 5 V (mΩ) | 45 |
| Tj [max] (°C) | 175 |
| ID [max] (A) | 24 |
| QGD [typ] (nC) | 4.3 |
| Ptot [max] (W) | 64 |
| Qr [typ] (nC) | 22 |
| VGSth [typ] (V) | 1.7 |
| Automotive qualified | Yes (AEC Q101 compliant) |
| Ciss [typ] (pF) | 1180 |
| Coss [typ] (pF) | 99 |
Key Features
- Logic Level Gate: The MOSFET features a true logic level gate, making it compatible with low-voltage drive signals.
- High Performance: Qualified to AEC Q101 standard for use in high-performance automotive applications.
- Thermal Efficiency: Suitable for thermally demanding environments with a maximum junction temperature of 175 °C.
- Repetitive Avalanche Rated: Designed to withstand repetitive avalanche conditions.
- Compact Package: LFPAK56 (Power SO8) package for efficient thermal management and compact design.
Applications
The BUK9Y41-80E,115 is primarily used in automotive applications due to its AEC Q101 qualification. It is suitable for various automotive systems that require high performance and reliability, such as power management, motor control, and other high-power switching applications. Additionally, its robust thermal characteristics make it suitable for industrial and power management applications where thermal efficiency is critical.
Q & A
- What is the maximum drain-source voltage (VDS) of the BUK9Y41-80E,115?
The maximum drain-source voltage (VDS) is 80 V.
- What is the typical on-resistance (RDSon) at VGS = 10 V?
The typical on-resistance (RDSon) at VGS = 10 V is 41 mΩ.
- What is the maximum junction temperature (Tj) of this MOSFET?
The maximum junction temperature (Tj) is 175 °C.
- Is the BUK9Y41-80E,115 automotive qualified?
Yes, it is qualified to the AEC Q101 standard for automotive applications.
- What package type is used for the BUK9Y41-80E,115?
The component is packaged in an LFPAK56 (Power SO8) package.
- What is the maximum continuous drain current (ID) of this MOSFET?
The maximum continuous drain current (ID) is 24 A.
- Is the BUK9Y41-80E,115 repetitive avalanche rated?
Yes, it is repetitive avalanche rated.
- What is the typical gate-source threshold voltage (VGSth) of this MOSFET?
The typical gate-source threshold voltage (VGSth) is 1.7 V.
- What are the typical input capacitance (Ciss) and output capacitance (Coss) values?
The typical input capacitance (Ciss) is 1180 pF, and the typical output capacitance (Coss) is 99 pF.
- Where can I purchase the BUK9Y41-80E,115?
You can purchase this component from various distributors such as DigiKey, Mouser Electronics, Arrow Electronics, and others listed on Nexperia's website.
