BUK9219-55A,118
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Nexperia USA Inc. BUK9219-55A,118

Manufacturer No:
BUK9219-55A,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 55V 55A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9219-55A,118 is an N-channel enhancement mode field-effect power transistor produced by Nexperia USA Inc. This component utilizes TrenchMOS™ technology, known for its very low on-state resistance and high performance. It is packaged in a TO-252-3, DPAK (2 leads + tab), SC-63 configuration, making it suitable for surface mount applications. The transistor is designed for high current and high power dissipation, making it a robust choice for various power switching applications.

Key Specifications

Parameter Conditions Min Typ Max Unit
VDS (Drain-Source Voltage) Tj ≥ 25 °C; Tj ≤ 175 °C - - 55 V
VDGR (Drain-Gate Voltage) RGS = 20 kΩ - - 55 V
VGS (Gate-Source Voltage) - -10 - 10 V
ID (Drain Current) Tmb = 100 °C; VGS = 5 V - - 38 A
ID (Drain Current) Tmb = 25 °C; VGS = 5 V - - 55 A
IDM (Peak Drain Current) Tmb = 25 °C; tp ≤ 10 µs; pulsed - - 219 A
Ptot (Total Power Dissipation) Tmb = 25 °C - - 114 W
Tstg (Storage Temperature) - -55 - 175 °C
Tj (Junction Temperature) - -55 - 175 °C
RDSon (Drain-Source On-State Resistance) VGS = 10 V; ID = 25 A; Tj = 25 °C - 17.6 -

Key Features

  • TrenchMOS™ Technology: Offers very low on-state resistance, enhancing the overall efficiency of the transistor.
  • Logic Level Compatibility: Compatible with logic level gate drive, making it versatile for various applications.
  • High Current and Power Dissipation: Capable of handling up to 55 A of continuous drain current and 114 W of total power dissipation.
  • Surface Mount Package: Packaged in TO-252-3, DPAK (2 leads + tab), SC-63, suitable for surface mount applications.
  • Lead-Free and RoHS Compliant: Ensures environmental friendliness and compliance with regulatory standards).
  • Avalanche Ruggedness: Non-repetitive drain-source avalanche energy of up to 120 mJ, enhancing reliability under transient conditions).

Applications

  • Automotive Power Switching: Suitable for 12 V and 24 V loads, including motors, lamps, and solenoids).
  • General Purpose Power Switching: Ideal for various power switching applications requiring high current and low on-state resistance).
  • Industrial and Commercial Systems: Can be used in industrial and commercial systems that require reliable and efficient power management).

Q & A

  1. What is the maximum drain current of the BUK9219-55A,118?

    The maximum continuous drain current is 55 A at Tmb = 25 °C and VGS = 5 V).

  2. What is the maximum power dissipation of this transistor?

    The total power dissipation is up to 114 W at Tmb = 25 °C).

  3. What is the package type of the BUK9219-55A,118?

    The transistor is packaged in a TO-252-3, DPAK (2 leads + tab), SC-63 configuration).

  4. Is the BUK9219-55A,118 RoHS compliant?

    Yes, the component is lead-free and RoHS compliant).

  5. What is the typical on-state resistance of the BUK9219-55A,118?

    The typical drain-source on-state resistance is 17.6 mΩ at VGS = 10 V and ID = 25 A).

  6. What are the common applications of the BUK9219-55A,118?

    Common applications include automotive and general purpose power switching, such as for motors, lamps, and solenoids).

  7. What is the maximum junction temperature of the BUK9219-55A,118?

    The maximum junction temperature is 175 °C).

  8. Does the BUK9219-55A,118 have avalanche ruggedness?

    Yes, it has a non-repetitive drain-source avalanche energy of up to 120 mJ).

  9. What is the gate-source threshold voltage of the BUK9219-55A,118?

    The gate-source threshold voltage is between 1 V and 2 V at ID = 1 mA and VDS = VGS).

  10. Is the BUK9219-55A,118 suitable for surface mount applications?

    Yes, it is designed for surface mount applications).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:17.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:2920 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):114W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number BUK9219-55A,118 BUK9215-55A,118
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc) 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 17.6mOhm @ 25A, 10V 13.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - 48 nC @ 5 V
Vgs (Max) ±10V ±15V
Input Capacitance (Ciss) (Max) @ Vds 2920 pF @ 25 V 2916 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 114W (Tc) 115W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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