BUK768R3-60E,118
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Nexperia USA Inc. BUK768R3-60E,118

Manufacturer No:
BUK768R3-60E,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 75A D2PAK
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The BUK768R3-60E,118 is a standard level N-channel MOSFET produced by Nexperia USA Inc. This device utilizes TrenchMOS technology and is packaged in a D2Pak (TO-263AB) configuration. It is designed and qualified to meet the stringent requirements of the automotive industry, adhering to the AEC-Q101 standard. This MOSFET is known for its high performance and reliability, making it suitable for a variety of applications that require efficient power management.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
VGS (Gate-Source Voltage)20 V
ID (Continuous Drain Current)75 A
Ptot (Total Power Dissipation at Tc)137 W
PackageD2Pak (TO-263AB)
Qualification StandardAEC-Q101

Key Features

  • High continuous drain current of 75 A
  • High total power dissipation of 137 W at Tc
  • Low on-state resistance (RDS(on))
  • TrenchMOS technology for improved performance and efficiency
  • AEC-Q101 qualified for automotive applications
  • D2Pak (TO-263AB) package for surface mount applications

Applications

The BUK768R3-60E,118 is designed for use in various automotive and industrial applications where high power handling and efficiency are critical. Some common applications include:

  • Automotive systems such as power steering, power windows, and fuel pumps
  • DC-DC converters and power supplies
  • Motor control and drive systems
  • High-power switching applications

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BUK768R3-60E,118?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What is the continuous drain current (ID) of this MOSFET?
    The continuous drain current (ID) is 75 A.
  3. What package type is used for the BUK768R3-60E,118?
    The package type is D2Pak (TO-263AB).
  4. Is the BUK768R3-60E,118 qualified for automotive use?
    Yes, it is qualified to the AEC-Q101 standard.
  5. What technology is used in the BUK768R3-60E,118?
    It uses TrenchMOS technology.
  6. What is the total power dissipation at Tc for this MOSFET?
    The total power dissipation at Tc is 137 W.
  7. Where can I find detailed specifications for the BUK768R3-60E,118?
    Detailed specifications can be found in the full data sheet available from Nexperia's sales office or through authorized distributors like Digi-Key and Mouser.
  8. What are some common applications for the BUK768R3-60E,118?
    Common applications include automotive systems, DC-DC converters, motor control, and high-power switching.
  9. What is the maximum gate-source voltage (VGS) for this MOSFET?
    The maximum gate-source voltage (VGS) is 20 V.
  10. Is the BUK768R3-60E,118 suitable for surface mount applications?
    Yes, it is suitable for surface mount applications due to its D2Pak package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:43.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2920 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):137W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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