BSP126,115
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Nexperia USA Inc. BSP126,115

Manufacturer No:
BSP126,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 250V 375MA SOT223
Delivery:
Payment:
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Product Introduction

Overview

The BSP126,115 is an N-channel vertical D-MOS logic level Field-Effect Transistor (FET) produced by Nexperia USA Inc. This device is designed using vertical D-MOS technology and is packaged in a plastic SOT223 (SC-73) package. It is part of Nexperia’s extensive portfolio of MOSFETs, which are widely used in various electronic designs across different industries, including automotive, industrial, power, computing, consumer, mobile, and wearables. The BSP126,115 is known for its efficiency, robustness, and reliability, making it a versatile component for a range of applications.

Key Specifications

Parameter Value Unit
Type Number BSP126 -
Orderable Part Number BSP126,115 -
Package SOT223 (SC-73) -
Channel Type N-Channel -
V DS (max) 250 V
P tot (max) 1.5 W
Continuous Drain Current (Id) 300 mA
On Resistance (Rds On) -
Release Date 2011-01-24 -

Key Features

  • Logic Level Operation: The BSP126,115 is designed as a logic level FET, making it compatible with standard logic voltage levels, which simplifies the design and integration into digital circuits.
  • High Voltage Capability: It has a maximum drain-source voltage (V DS) of 250V, making it suitable for applications requiring high voltage handling.
  • Low On Resistance: Although the specific on-resistance value is not provided for this model, MOSFETs in general offer low on-resistance, which helps in reducing energy consumption and heat in the circuit.
  • Compact Packaging: The SOT223 (SC-73) package is a surface mount type, which is convenient for integration onto circuit boards and suitable for mass production and automated assembly).
  • Environmental Compliance: The BSP126,115 is compliant with various environmental regulations such as RoHS, REACH, and ELV, ensuring it is lead-free and halogen-free).

Applications

  • Motor Control: The BSP126,115 can be used in motor control circuits for applications like variable frequency drives (VFDs), robotics, and electric vehicles, where it controls the speed and direction of electric motors).
  • Switching Devices: It is used as a switching device in digital and analog circuits, offering efficient control of electronic signals in applications like data switches and multiplexers).
  • Power Management: The MOSFET is used in electronic products such as DC-DC converters, LED drivers, and LCD TVs for controlling power switches).
  • New Energy Sector: It is used in the field of new energy such as wind power and photovoltaics for conversion and control that requires high voltage and high current).

Q & A

  1. What is the maximum drain-source voltage (V DS) of the BSP126,115?

    The maximum drain-source voltage (V DS) of the BSP126,115 is 250V).

  2. What is the continuous drain current (Id) of the BSP126,115?

    The continuous drain current (Id) of the BSP126,115 is 300mA).

  3. What package type is used for the BSP126,115?

    The BSP126,115 is packaged in a SOT223 (SC-73) package).

  4. Is the BSP126,115 compliant with environmental regulations?

    Yes, the BSP126,115 is compliant with RoHS, REACH, and ELV regulations, and it is lead-free and halogen-free).

  5. What are some common applications of the BSP126,115?

    The BSP126,115 is used in motor control, switching devices, power management, and the new energy sector).

  6. What is the release date of the BSP126,115?

    The release date of the BSP126,115 is January 24, 2011).

  7. Can the BSP126,115 be used in high-frequency applications?

    While specific high-frequency performance data for the BSP126,115 is not provided, MOSFETs in general can be used in high-frequency applications due to their fast switching capabilities).

  8. How can I obtain samples of the BSP126,115?

    Samples of the BSP126,115 can be ordered via Nexperia’s sales organization or through their network of global and regional distributors).

  9. What is the maximum power dissipation of the BSP126,115?

    The maximum power dissipation (P tot) of the BSP126,115 is 1.5W).

  10. Is the BSP126,115 suitable for automotive applications?

    Yes, the BSP126,115 is suitable for automotive applications due to its high voltage capability and robust design).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:375mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:120 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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Same Series
BSP126,135
BSP126,135
MOSFET N-CH 250V 375MA SOT223

Similar Products

Part Number BSP126,115 BSP126,135 BSP122,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V 200 V
Current - Continuous Drain (Id) @ 25°C 375mA (Ta) 375mA (Ta) 550mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 2.4V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 300mA, 10V 5Ohm @ 300mA, 10V 2.5Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 120 pF @ 25 V 120 pF @ 25 V 100 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 1.5W (Ta) 1.5W (Ta) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223 SOT-223 SOT-223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

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