Overview
The BSP126,135 is an N-Channel MOSFET produced by Nexperia USA Inc. This surface mount device is part of the SOT-223 package family and is designed for various electronic applications requiring high performance and reliability. The BSP126,135 is known for its robust specifications, making it suitable for a wide range of uses in modern electronics.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | 250 V |
| ID (Drain Current) | 375 mA (at Ta) |
| PD (Power Dissipation) | 1.5 W (at Ta) |
| VGS(th) (Gate-Source Threshold Voltage) | 2.0 - 4.0 V |
| RDS(on) (On-State Drain-Source Resistance) | Typically 2.5 Ω |
| Package | SOT-223 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
Key Features
- High drain-source voltage (VDS) of 250 V, making it suitable for high-voltage applications.
- Low on-state drain-source resistance (RDS(on)) of typically 2.5 Ω, which reduces power losses.
- Compact SOT-223 surface mount package, ideal for space-constrained designs.
- High power dissipation capability of 1.5 W at ambient temperature.
- Gate-source threshold voltage (VGS(th)) range of 2.0 - 4.0 V, ensuring reliable switching characteristics.
Applications
The BSP126,135 N-Channel MOSFET is versatile and can be used in a variety of applications, including:
- Power switching and power management systems.
- Motor control and drive circuits.
- High-frequency switching applications.
- Automotive and industrial electronics.
- General-purpose switching in electronic devices.
Q & A
- What is the drain-source voltage rating of the BSP126,135?
The BSP126,135 has a drain-source voltage (VDS) rating of 250 V. - What is the maximum drain current for the BSP126,135?
The maximum drain current (ID) for the BSP126,135 is 375 mA at ambient temperature. - What is the power dissipation capability of the BSP126,135?
The BSP126,135 can dissipate up to 1.5 W of power at ambient temperature. - What is the typical on-state drain-source resistance of the BSP126,135?
The typical on-state drain-source resistance (RDS(on)) is 2.5 Ω. - What package type does the BSP126,135 use?
The BSP126,135 is packaged in a SOT-223 surface mount package. - What is the gate-source threshold voltage range for the BSP126,135?
The gate-source threshold voltage (VGS(th)) range is 2.0 - 4.0 V. - Is the BSP126,135 suitable for high-frequency applications?
Yes, the BSP126,135 is suitable for high-frequency switching applications due to its low on-state resistance and high switching speed. - Can the BSP126,135 be used in automotive electronics?
Yes, the BSP126,135 can be used in automotive and industrial electronics due to its robust specifications and reliability. - What is the FET type of the BSP126,135?
The BSP126,135 is an N-Channel MOSFET. - What technology is used in the BSP126,135?
The BSP126,135 uses MOSFET (Metal Oxide) technology.
