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BSP126,135
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Nexperia USA Inc. BSP126,135

Manufacturer No:
BSP126,135
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 250V 375MA SOT223
Delivery:
Payment:
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Product Introduction

Overview

The BSP126,135 is an N-Channel MOSFET produced by Nexperia USA Inc. This surface mount device is part of the SOT-223 package family and is designed for various electronic applications requiring high performance and reliability. The BSP126,135 is known for its robust specifications, making it suitable for a wide range of uses in modern electronics.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)250 V
ID (Drain Current)375 mA (at Ta)
PD (Power Dissipation)1.5 W (at Ta)
VGS(th) (Gate-Source Threshold Voltage)2.0 - 4.0 V
RDS(on) (On-State Drain-Source Resistance)Typically 2.5 Ω
PackageSOT-223
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)

Key Features

  • High drain-source voltage (VDS) of 250 V, making it suitable for high-voltage applications.
  • Low on-state drain-source resistance (RDS(on)) of typically 2.5 Ω, which reduces power losses.
  • Compact SOT-223 surface mount package, ideal for space-constrained designs.
  • High power dissipation capability of 1.5 W at ambient temperature.
  • Gate-source threshold voltage (VGS(th)) range of 2.0 - 4.0 V, ensuring reliable switching characteristics.

Applications

The BSP126,135 N-Channel MOSFET is versatile and can be used in a variety of applications, including:

  • Power switching and power management systems.
  • Motor control and drive circuits.
  • High-frequency switching applications.
  • Automotive and industrial electronics.
  • General-purpose switching in electronic devices.

Q & A

  1. What is the drain-source voltage rating of the BSP126,135?
    The BSP126,135 has a drain-source voltage (VDS) rating of 250 V.
  2. What is the maximum drain current for the BSP126,135?
    The maximum drain current (ID) for the BSP126,135 is 375 mA at ambient temperature.
  3. What is the power dissipation capability of the BSP126,135?
    The BSP126,135 can dissipate up to 1.5 W of power at ambient temperature.
  4. What is the typical on-state drain-source resistance of the BSP126,135?
    The typical on-state drain-source resistance (RDS(on)) is 2.5 Ω.
  5. What package type does the BSP126,135 use?
    The BSP126,135 is packaged in a SOT-223 surface mount package.
  6. What is the gate-source threshold voltage range for the BSP126,135?
    The gate-source threshold voltage (VGS(th)) range is 2.0 - 4.0 V.
  7. Is the BSP126,135 suitable for high-frequency applications?
    Yes, the BSP126,135 is suitable for high-frequency switching applications due to its low on-state resistance and high switching speed.
  8. Can the BSP126,135 be used in automotive electronics?
    Yes, the BSP126,135 can be used in automotive and industrial electronics due to its robust specifications and reliability.
  9. What is the FET type of the BSP126,135?
    The BSP126,135 is an N-Channel MOSFET.
  10. What technology is used in the BSP126,135?
    The BSP126,135 uses MOSFET (Metal Oxide) technology.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:375mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:120 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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Same Series
BSP126,115
BSP126,115
MOSFET N-CH 250V 375MA SOT223

Similar Products

Part Number BSP126,135 BSP126,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V
Current - Continuous Drain (Id) @ 25°C 375mA (Ta) 375mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 300mA, 10V 5Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 120 pF @ 25 V 120 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.5W (Ta) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223 SOT-223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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