BCP53-10TF
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Nexperia USA Inc. BCP53-10TF

Manufacturer No:
BCP53-10TF
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 80V 1A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP53-10TF is a PNP medium power bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed for high-current applications and is packaged in a SOT223 (SC-73) surface-mounted device (SMD) plastic package. It is AEC-Q101 qualified, making it suitable for automotive and other demanding environments. The BCP53-10TF offers high current handling, high power dissipation capability, and a wide range of applications across various industries.

Key Specifications

Category Specification
Manufacturer Nexperia USA Inc.
Transistor Type PNP
Package / Case SOT223 (SC-73)
Current-Collector (Ic) (Max) 1 A
Operating Temperature 150°C TJ
Power - Max 1.8 W
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 80 V
Frequency - Transition 100 MHz
Moisture Sensitivity Level (MSL) 1 (Unlimited)
RoHS Status ROHS3 Compliant

Key Features

  • High current handling up to 1 A
  • High power dissipation capability of 1.8 W
  • AEC-Q101 qualified for automotive applications
  • Three current gain selections available
  • Surface mount SOT223 (SC-73) package for easy integration
  • High collector-emitter breakdown voltage of 80 V
  • Low Vce saturation of 500 mV @ 50 mA, 500 mA

Applications

  • Linear voltage regulators
  • High-side switches
  • Battery-driven devices
  • Power management
  • MOSFET drivers
  • Amplifiers
  • Automotive and industrial electronics
  • Consumer and mobile devices

Q & A

  1. What is the maximum collector current of the BCP53-10TF transistor?

    The maximum collector current is 1 A.

  2. What is the operating temperature range of the BCP53-10TF?

    The operating temperature range is up to 150°C TJ.

  3. What package type is the BCP53-10TF available in?

    The BCP53-10TF is available in a SOT223 (SC-73) surface-mounted device (SMD) package.

  4. Is the BCP53-10TF RoHS compliant?

    Yes, the BCP53-10TF is ROHS3 compliant.

  5. What is the maximum collector-emitter breakdown voltage of the BCP53-10TF?

    The maximum collector-emitter breakdown voltage is 80 V.

  6. What are some common applications of the BCP53-10TF transistor?

    Common applications include linear voltage regulators, high-side switches, battery-driven devices, power management, MOSFET drivers, and amplifiers.

  7. Is the BCP53-10TF suitable for automotive applications?

    Yes, the BCP53-10TF is AEC-Q101 qualified, making it suitable for automotive applications.

  8. What is the minimum DC current gain (hFE) of the BCP53-10TF at 150 mA and 2 V?

    The minimum DC current gain (hFE) is 63 at 150 mA and 2 V.

  9. What is the maximum power dissipation of the BCP53-10TF transistor?

    The maximum power dissipation is 1.8 W.

  10. How can I obtain samples of the BCP53-10TF transistor?

    Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:1.8 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223
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Same Series
BCP53-10TF
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BCP53-16TF
BCP53-16T/SOT223/SC-73

Similar Products

Part Number BCP53-10TF BCP53-16TF BCP56-10TF BCP54-10TF BCP55-10TF BCP53-10TX BCP51-10TF BCP52-10TF BCP53-10T1
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. onsemi
Product Status Active Active Active Active Active Active Active Active Active
Transistor Type PNP PNP NPN NPN NPN PNP PNP PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 45 V 60 V 80 V 45 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 1.8 W - 1.8 W 1.3 W 1.3 W 1.35 W 1.3 W 1.3 W 1.5 W
Frequency - Transition 100MHz 100MHz 100MHz 155MHz 155MHz 145MHz 140MHz 140MHz 50MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 SOT-223 SOT-223 SOT-223 SOT-223 SOT-223 SOT-223 SOT-223 SOT-223 (TO-261)

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