BCP56-10TF
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Nexperia USA Inc. BCP56-10TF

Manufacturer No:
BCP56-10TF
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 1A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP56-10TF is a medium power NPN bipolar transistor manufactured by Nexperia USA Inc. This transistor is part of the BCP56T series and is designed for a wide range of applications requiring high collector current and power dissipation capabilities. The BCP56-10TF is housed in the SOT223 (SC-73) package, which is a surface-mounted package with increased heatsink capabilities, making it suitable for various electronic designs.

Key Specifications

Type number Package version Package name Size (mm) Channel type P tot (mW) V CEO [max] (V) I C [max] (mA) h FE [min] h FE [max] T J [max] (°C) f T [min] (MHz)
BCP56-10T SOT223 SC-73 6.5 x 3.5 x 1.65 NPN 600.0 80.0 1000.0 63.0 160.0 150 100.0

Key Features

  • High collector current capability (IC) of up to 1 A
  • High power dissipation capability of up to 600 mW
  • Three current gain selections available
  • Maximum collector-emitter voltage (V CEO) of 80 V
  • Maximum junction temperature (T J) of 150 °C
  • Minimum current gain (h FE) of 63 and maximum of 160
  • Surface-mounted SOT223 (SC-73) package with increased heatsink

Applications

The BCP56-10TF transistor is versatile and can be used in a variety of applications across different industries, including:

  • Automotive systems
  • Industrial control systems
  • Power management and switching applications
  • Consumer electronics
  • Mobile and wearable devices
  • Computing and server systems

Q & A

  1. What is the maximum collector current of the BCP56-10TF transistor?

    The maximum collector current (I C) is 1 A.

  2. What is the maximum collector-emitter voltage (V CEO) of the BCP56-10TF?

    The maximum collector-emitter voltage (V CEO) is 80 V.

  3. What is the package type of the BCP56-10TF transistor?

    The transistor is housed in the SOT223 (SC-73) package.

  4. What are the dimensions of the SOT223 package?

    The dimensions are 6.5 mm x 3.5 mm x 1.65 mm.

  5. What is the maximum junction temperature (T J) of the BCP56-10TF?

    The maximum junction temperature (T J) is 150 °C.

  6. What is the minimum current gain (h FE) of the BCP56-10TF?

    The minimum current gain (h FE) is 63.

  7. What is the maximum current gain (h FE) of the BCP56-10TF?

    The maximum current gain (h FE) is 160.

  8. Is the BCP56-10TF RoHS compliant?
  9. How can I obtain samples of the BCP56-10TF transistor?

    Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.

  10. What are some common applications for the BCP56-10TF transistor?

    Common applications include automotive systems, industrial control systems, power management, consumer electronics, and more.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:1.8 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223
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BCP56-10TF
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Similar Products

Part Number BCP56-10TF BCP56-10TX BCP56-16TF BCP53-10TF BCP54-10TF BCP55-10TF
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active
Transistor Type NPN NPN NPN PNP NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 80 V 45 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 63 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 1.8 W 1.8 W - 1.8 W 1.3 W 1.3 W
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 155MHz 155MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 SOT-223 SOT-223 SOT-223 SOT-223 SOT-223

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