Nexperia USA Inc. BCP56-16TX

Manufacturer No:: BCP56-16TX
Manufacturer:: Nexperia USA Inc.
Package:: Tape & Reel (TR)
Description:: TRANS NPN 80V 1A SOT223
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Product Introduction

Overview

The BCP56-16TX is a medium power NPN bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is part of the BCP56T series and is designed for surface mount applications. It is housed in a SOT223 (SC-73) package, making it suitable for a variety of electronic designs requiring high collector current and power dissipation capabilities.

Key Specifications

Parameter	Value	Unit
Package	SOT223 (SC-73)	-
Collector Emitter Voltage (V_CEO)	80	V
Collector Current (I_C)	1000	mA
Current Gain (h_FE)	100 - 250	-
Power Dissipation (P_tot)	600	mW
Junction Temperature (T_J)	150	°C
Transition Frequency (f_T)	100	MHz
Automotive Qualified	Yes	-

Key Features

High collector current capability (I_C) and high power dissipation capability.
Three current gain selections available.
Housed in a SOT223 (SC-73) surface-mounted device (SMD) plastic package.
PNP complement available (BCP53T series).
Suitable for linear voltage regulators, MOSFET drivers, high-side switches, power management, and amplifiers.

Applications

Automotive systems: Suitable for various automotive applications due to its automotive qualification.
Industrial applications: Used in industrial control systems, power management, and high-side switches.
Power management: Ideal for linear voltage regulators and MOSFET drivers.
Consumer electronics: Used in amplifiers and other consumer electronic devices requiring medium power transistors.
Mobile and wearables: Can be used in mobile devices and wearables due to its compact SOT223 package.

Q & A

What is the collector emitter voltage (V_CEO) of the BCP56-16TX?
The collector emitter voltage (V_CEO) of the BCP56-16TX is 80 V.
What is the maximum collector current (I_C) of the BCP56-16TX?
The maximum collector current (I_C) of the BCP56-16TX is 1000 mA.
What is the current gain (h_FE) range of the BCP56-16TX?
The current gain (h_FE) range of the BCP56-16TX is between 100 and 250.
What is the power dissipation capability of the BCP56-16TX?
The power dissipation capability of the BCP56-16TX is 600 mW.
What is the junction temperature (T_J) of the BCP56-16TX?
The junction temperature (T_J) of the BCP56-16TX is 150 °C.
Is the BCP56-16TX automotive qualified?
Yes, the BCP56-16TX is automotive qualified.
What package type does the BCP56-16TX use?
The BCP56-16TX is housed in a SOT223 (SC-73) package.
What are some typical applications of the BCP56-16TX?
The BCP56-16TX is typically used in linear voltage regulators, MOSFET drivers, high-side switches, power management, and amplifiers.
Does the BCP56-16TX have a PNP complement?
Yes, the PNP complement of the BCP56-16TX is the BCP53T series.
How can I order samples of the BCP56-16TX?
Samples of the BCP56-16TX can be ordered through Nexperia's sales organization or through their network of global and regional distributors.

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UnitPrice: $0.49

Quantity: 1,902

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Part Number	BCP56-16TX	BCP53-16TX	BCP56-10TX	BCP56-16HX	BCP56-16TF
Manufacturer	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.
Product Status	Active	Active	Active	Active	Active
Transistor Type	NPN	PNP	NPN	NPN	NPN
Current - Collector (Ic) (Max)	1 A	1 A	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	80 V	80 V	80 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 2V	63 @ 150mA, 2V	63 @ 150mA, 2V	100 @ 150mA, 2V	100 @ 150mA, 2V
Power - Max	1.35 W	1.35 W	1.8 W	-	-
Frequency - Transition	100MHz	145MHz	100MHz	100MHz	100MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	175°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA
Supplier Device Package	SOT-223	SOT-223	SOT-223	SOT-223	SOT-223

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 2V
Power - Max:	1.35 W
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223