BCP54-10TF
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Nexperia USA Inc. BCP54-10TF

Manufacturer No:
BCP54-10TF
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
BCP54-10T/SOT223/SC-73
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP54-10TF is a medium power NPN bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is part of the BCP54T series and is designed for a wide range of applications, particularly in automotive, industrial, and consumer electronics. It is known for its high collector current capability, high power dissipation, and three current gain selections, making it versatile and reliable for various use cases.

Key Specifications

Type numberPackage versionPackage nameSize (mm)Channel typeP tot (mW)V CEO [max] (V)I C [max] (mA)h FE [min]h FE [max]T J [max] (°C)f T [min] (MHz)
BCP54-10TFSOT223SC-736.5 x 3.5 x 1.65NPN65045100063160150100

Key Features

  • High collector current capability (IC) and current gain (hFE) selections
  • High power dissipation capability
  • AEC-Q101 qualified, ensuring reliability and performance in automotive applications
  • Surface mount SOT223 package with increased heatsink for better thermal management
  • Transition frequency of 155 MHz, suitable for high-frequency applications
  • Maximum junction temperature of 150°C, ensuring robustness in various operating conditions

Applications

The BCP54-10TF transistor is suitable for a variety of applications across different industries, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive electronics such as power management, motor control, and sensor interfaces.
  • Industrial electronics: It can be used in industrial control systems, power supplies, and other high-reliability applications.
  • Consumer electronics: Suitable for use in audio amplifiers, power switches, and other consumer electronic devices.

Q & A

  1. What is the maximum collector-emitter voltage (V CEO) of the BCP54-10TF transistor?
    The maximum collector-emitter voltage (V CEO) is 45 V.
  2. What is the maximum collector current (I C) of the BCP54-10TF transistor?
    The maximum collector current (I C) is 1000 mA.
  3. What is the package type of the BCP54-10TF transistor?
    The package type is SOT223 (SC-73).
  4. Is the BCP54-10TF transistor AEC-Q101 qualified?
    Yes, the BCP54-10TF transistor is AEC-Q101 qualified.
  5. What is the transition frequency of the BCP54-10TF transistor?
    The transition frequency is 155 MHz.
  6. What is the maximum junction temperature of the BCP54-10TF transistor?
    The maximum junction temperature is 150°C.
  7. What are the current gain (hFE) ranges for the BCP54-10TF transistor?
    The current gain (hFE) ranges from 63 to 160.
  8. Is the BCP54-10TF transistor RoHS compliant?
    Yes, the BCP54-10TF transistor is RoHS compliant.
  9. What is the power dissipation capability of the BCP54-10TF transistor?
    The power dissipation capability is 650 mW.
  10. How many leads does the SOT223 package have?
    The SOT223 package has 4 leads.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:1.3 W
Frequency - Transition:155MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223
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Similar Products

Part Number BCP54-10TF BCP56-10TF BCP54-16TF BCP55-10TF BCP51-10TF BCP52-10TF BCP53-10TF
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active Active
Transistor Type NPN NPN NPN NPN PNP PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 45 V 80 V 45 V 60 V 45 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 63 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 1.3 W 1.8 W 1.3 W 1.3 W 1.3 W 1.3 W 1.8 W
Frequency - Transition 155MHz 100MHz 155MHz 155MHz 140MHz 140MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 SOT-223 SOT-223 SOT-223 SOT-223 SOT-223 SOT-223

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