BCP53-10T1
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onsemi BCP53-10T1

Manufacturer No:
BCP53-10T1
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANSISTOR PNP 80V 1.5A SOT-223
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The BCP53-10T1 is a PNP Silicon Epitaxial transistor manufactured by ON Semiconductor. This device is specifically designed for use in audio amplifier applications and is housed in the SOT-223 package, which is suitable for medium power surface mount applications. The SOT-223 package can be soldered using either wave or reflow methods, and its formed leads help absorb thermal stress during soldering, preventing damage to the die. The BCP53-10T1 is part of the BCP53 series, which also includes other variants such as BCP53 and BCP53-16, each with slightly different specifications and applications.

Key Specifications

CharacteristicSymbolMinTypMaxUnit
Collector-Emitter VoltageVCEO-80--Vdc
Collector-Base VoltageVCBO-100--Vdc
Emitter-Base VoltageVEBO-5.0--Vdc
Collector CurrentIC--1.5A
DC Current Gain (IC = -150 mA, VCE = -2.0 V)hFE254063-
Collector-Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA)VCE(sat)--0.5Vdc
Base-Emitter On Voltage (IC = -500 mA, VCE = -2.0 V)VBE(on)--1.0Vdc
Current-Gain Bandwidth Product (IC = -10 mA, VCE = -5.0 V, f = 35 MHz)fT-50-MHz

Key Features

  • High current capability up to 1.5 A
  • SOT-223 package suitable for medium power surface mount applications
  • Can be soldered using wave or reflow methods, with formed leads absorbing thermal stress
  • Pb-Free, Halogen Free/BFR Free, and RoHS compliant
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications
  • NPN complement is BCP56

Applications

The BCP53-10T1 is primarily designed for use in audio amplifier applications. Its high current capability and medium power handling make it suitable for a variety of audio equipment and other electronic devices requiring reliable and efficient transistor performance.

Q & A

  1. What is the maximum collector-emitter voltage of the BCP53-10T1? The maximum collector-emitter voltage (VCEO) is -80 Vdc.
  2. What is the package type of the BCP53-10T1? The BCP53-10T1 is housed in the SOT-223 package.
  3. Can the BCP53-10T1 be soldered using reflow methods? Yes, the SOT-223 package can be soldered using either wave or reflow methods.
  4. What is the maximum collector current of the BCP53-10T1? The maximum collector current (IC) is 1.5 A.
  5. Is the BCP53-10T1 RoHS compliant? Yes, the BCP53-10T1 is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
  6. What is the NPN complement of the BCP53-10T1? The NPN complement is BCP56.
  7. What are the typical applications of the BCP53-10T1? The BCP53-10T1 is primarily used in audio amplifier applications.
  8. Is the BCP53-10T1 AEC-Q101 qualified? Yes, the BCP53-10T1 is AEC-Q101 qualified and PPAP capable.
  9. What is the collector-emitter saturation voltage of the BCP53-10T1? The collector-emitter saturation voltage (VCE(sat)) is up to 0.5 Vdc.
  10. What is the base-emitter on voltage of the BCP53-10T1? The base-emitter on voltage (VBE(on)) is up to 1.0 Vdc.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:1.5 W
Frequency - Transition:50MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223 (TO-261)
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Similar Products

Part Number BCP53-10T1 BCP53-10TF BCP53-10T1G BCP53-10TX
Manufacturer onsemi Nexperia USA Inc. onsemi Nexperia USA Inc.
Product Status Active Active Active Active
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 1.5 A 1 A 1.5 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) - 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 1.5 W 1.8 W 1.5 W 1.35 W
Frequency - Transition 50MHz 100MHz 50MHz 145MHz
Operating Temperature -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 (TO-261) SOT-223 SOT-223 (TO-261) SOT-223

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