BC807-16QB-QZ
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Nexperia USA Inc. BC807-16QB-QZ

Manufacturer No:
BC807-16QB-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A DFN1110D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-16QB-QZ is a PNP general-purpose bipolar junction transistor (BJT) produced by Nexperia USA Inc. This transistor is housed in a compact SOT8015-3 (also known as DFN1110D-3) surface-mount package, making it ideal for space-constrained applications in various industries such as telecommunications, automotive, and consumer electronics. The BC807-16QB-QZ is designed for reliable amplification and switching operations, offering high current gain and low power consumption.

Key Specifications

ParameterValue
PackageSOT8015-3 (DFN1110D-3)
PolarityPNP
Voltage - Collector Emitter Breakdown (Max)45 V
Current - Collector (Max)500 mA
Power Dissipation (Max)350 mW
DC Current Gain (hFE) Min/Max100 / 250
Vce Saturation (Max) @ Ib, Ic700 mV @ 50 mA, 500 mA
Operating Temperature150°C (TJ)
QualificationAEC-Q101 (Automotive qualified)
Mounting TypeSurface Mount

Key Features

  • Compact SOT8015-3 package for minimal footprint and high thermal efficiency.
  • PNP bipolar junction transistor suitable for general-purpose amplification and switching applications.
  • High current gain with a range of 100 to 250.
  • Low power consumption with a maximum power dissipation of 350 mW.
  • AEC-Q101 qualified, making it suitable for automotive applications.
  • High voltage handling capability with a maximum collector-emitter voltage of 45 V.

Applications

The BC807-16QB-QZ transistor is versatile and can be used in a variety of applications across different industries. These include:

  • Automotive systems: For general-purpose switching and amplification in automotive electronics.
  • Telecommunications: In signal amplification and switching circuits.
  • Consumer Electronics: In audio amplifiers, power supplies, and other electronic devices.
  • Industrial Systems: For control and monitoring circuits.

Q & A

  1. What is the package type of the BC807-16QB-QZ transistor?
    The BC807-16QB-QZ transistor is housed in a SOT8015-3 (DFN1110D-3) package.
  2. What is the polarity of the BC807-16QB-QZ transistor?
    The BC807-16QB-QZ is a PNP bipolar junction transistor.
  3. What is the maximum collector-emitter voltage of the BC807-16QB-QZ transistor?
    The maximum collector-emitter voltage is 45 V.
  4. What is the maximum current rating of the BC807-16QB-QZ transistor?
    The maximum collector current is 500 mA.
  5. What is the power dissipation capability of the BC807-16QB-QZ transistor?
    The maximum power dissipation is 350 mW.
  6. Is the BC807-16QB-QZ transistor automotive qualified?
    Yes, it is qualified according to AEC-Q101 standards.
  7. What is the operating temperature range of the BC807-16QB-QZ transistor?
    The operating temperature range is up to 150°C (TJ).
  8. What are the typical applications of the BC807-16QB-QZ transistor?
    It is used in automotive, telecommunications, consumer electronics, and industrial systems for general-purpose amplification and switching.
  9. What is the DC current gain range of the BC807-16QB-QZ transistor?
    The DC current gain (hFE) ranges from 100 to 250.
  10. How does the BC807-16QB-QZ transistor contribute to space efficiency in designs?
    The compact SOT8015-3 package of the BC807-16QB-QZ transistor provides a minimal footprint, making it ideal for space-constrained applications.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
Power - Max:350 mW
Frequency - Transition:80MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
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Similar Products

Part Number BC807-16QB-QZ BC807-16QC-QZ BC807-16QBH-QZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V 100 @ 100mA, 1V 100 @ 100mA, 1V
Power - Max 350 mW 380 mW 420 mW
Frequency - Transition 80MHz 80MHz 80MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1110D-3 DFN1412D-3 DFN1110D-3

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