MMBT3904LT3XT
  • Share:

Infineon Technologies MMBT3904LT3XT

Manufacturer No:
MMBT3904LT3XT
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.2A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT3904LT3XT is an NPN silicon switching transistor produced by Infineon Technologies. This transistor is part of the MMBT3904 series, known for its high DC current gain and low collector-emitter saturation voltage, making it suitable for a variety of switching and amplification applications.

Key Specifications

Characteristic Symbol Min Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 60 V IC = 10µA, IE = 0
Collector-Emitter Breakdown Voltage BVCEO 40 V IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage BVEBO 6 V IE = 10µA, IC = 0
Collector Current (Max) IC 200 mA
DC Current Gain (hFE) hFE 100 300 IC = 10mA, VCE = 1V
Collector-Emitter Saturation Voltage VCE(SAT) 300mV IB = 5mA, IC = 50mA
Power (Max) P 350 mW
Frequency - Transition fT 270 MHz
Mounting Type Surface Mount
Package / Case SOT-23-3, TO-236-3, SC-59

Key Features

  • High DC current gain: 100 to 300 at IC = 10mA, VCE = 1V
  • Low collector-emitter saturation voltage: up to 300mV at IB = 5mA, IC = 50mA
  • Collector-Emitter Breakdown Voltage: 40V
  • Complementary PNP type: MMBT3906T
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability
  • Ultra-Small Surface Mount Package: SOT-23-3, TO-236-3, SC-59

Applications

  • General-purpose switching and amplification in electronic circuits
  • Automotive applications due to AEC-Q101 qualification
  • Consumer electronics requiring small, reliable, and efficient transistors
  • Industrial control systems and automation

Q & A

  1. What is the maximum collector current of the MMBT3904LT3XT?

    The maximum collector current is 200mA

  2. What is the collector-emitter breakdown voltage of the MMBT3904LT3XT?

    The collector-emitter breakdown voltage is 40V

  3. What is the typical DC current gain of the MMBT3904LT3XT?

    The typical DC current gain is between 100 to 300 at IC = 10mA, VCE = 1V

  4. Is the MMBT3904LT3XT RoHS compliant?

    Yes, the MMBT3904LT3XT is totally Lead-Free & Fully RoHS Compliant

  5. What are the package options for the MMBT3904LT3XT?

    The package options include SOT-23-3, TO-236-3, and SC-59

  6. What is the maximum power dissipation of the MMBT3904LT3XT?

    The maximum power dissipation is 350mW

  7. Is the MMBT3904LT3XT suitable for automotive applications?

    Yes, it is qualified to AEC-Q101 Standards for High Reliability, making it suitable for automotive applications

  8. What is the complementary PNP type of the MMBT3904LT3XT?

    The complementary PNP type is MMBT3906T

  9. What is the typical collector-emitter saturation voltage of the MMBT3904LT3XT?

    The typical collector-emitter saturation voltage is up to 300mV at IB = 5mA, IC = 50mA

  10. Is the MMBT3904LT3XT halogen and antimony free?

    Yes, the MMBT3904LT3XT is halogen and antimony free and is considered a “Green” device

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:330 mW
Frequency - Transition:300MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

-
171

Please send RFQ , we will respond immediately.

Same Series
SMBT3904SH6327XTSA1
SMBT3904SH6327XTSA1
TRANS 2NPN 40V 0.2A SOT363
SMBT3904UPNE6327HTSA1
SMBT3904UPNE6327HTSA1
TRANS NPN/PNP 40V 0.2A SC74-6
SMBT3904SE6327HTSA1
SMBT3904SE6327HTSA1
TRANS 2NPN 40V 0.2A SOT363
SMBT 3904U E6327
SMBT 3904U E6327
TRANS 2NPN 40V 0.2A SC74-6
SMBT3904E6327HTSA1
SMBT3904E6327HTSA1
TRANS NPN 40V 0.2A SOT23
SMBT3904E6433HTMA1
SMBT3904E6433HTMA1
TRANS NPN 40V 0.2A SOT23
MMBT3904LT3XT
MMBT3904LT3XT
TRANS NPN 40V 0.2A SOT23
SMBT 3904 B5003
SMBT 3904 B5003
TRANS NPN 40V 0.2A SOT23

Related Product By Categories

SBC817-40LT1G
SBC817-40LT1G
onsemi
TRANS NPN 45V 0.5A SOT23-3
BC846BLT3G
BC846BLT3G
onsemi
TRANS NPN 65V 0.1A SOT23-3
SMMBT2222ALT3G
SMMBT2222ALT3G
onsemi
TRANS NPN 40V 0.6A SOT23-3
NSS20101JT1G
NSS20101JT1G
onsemi
TRANS NPN 20V 1A SC89-3
BCP56TA
BCP56TA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
BFS19,235
BFS19,235
Nexperia USA Inc.
TRANS NPN 20V 0.03A TO236AB
BCP53-10T115
BCP53-10T115
NXP USA Inc.
TRANS PNP 80V 1A SOT223
BC857C TR PBFREE
BC857C TR PBFREE
Central Semiconductor Corp
TRANS PNP 45V 0.1A SOT23
BCP69TA
BCP69TA
Diodes Incorporated
TRANS PNP BIPOL 20V 1A SOT-223
BC846B/SNVL
BC846B/SNVL
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB
BCX56-16 TR
BCX56-16 TR
Central Semiconductor Corp
TRANS NPN 80V 1A SOT89
BC807-25W/MIX
BC807-25W/MIX
Nexperia USA Inc.
TRANS PNP 45V 0.5A SOT323

Related Product By Brand

BAV99SH6433XTMA1
BAV99SH6433XTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAS40-02LE6327
BAS40-02LE6327
Infineon Technologies
BAS40 - HIGH SPEED SWITCHING, CL
BC856UE6327HTSA1
BC856UE6327HTSA1
Infineon Technologies
TRANS 2PNP 65V 0.1A SC74-6
BC80740E6327
BC80740E6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BCP53-10E6327
BCP53-10E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BC856BE6327
BC856BE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC856BWE6327BTSA1
BC856BWE6327BTSA1
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
IRF4905STRRPBF
IRF4905STRRPBF
Infineon Technologies
MOSFET P-CH 55V 42A D2PAK
IRF100B201
IRF100B201
Infineon Technologies
MOSFET N-CH 100V 192A TO220AB
IRFP4468PBFXKMA1
IRFP4468PBFXKMA1
Infineon Technologies
TRENCH >=100V PG-TO247-3
BTS70302EPAXUMA1
BTS70302EPAXUMA1
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 TSDSO-14
BTS50202EKAXUMA2
BTS50202EKAXUMA2
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-14