MMBT3904LT3XT
  • Share:

Infineon Technologies MMBT3904LT3XT

Manufacturer No:
MMBT3904LT3XT
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.2A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT3904LT3XT is an NPN silicon switching transistor produced by Infineon Technologies. This transistor is part of the MMBT3904 series, known for its high DC current gain and low collector-emitter saturation voltage, making it suitable for a variety of switching and amplification applications.

Key Specifications

Characteristic Symbol Min Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 60 V IC = 10µA, IE = 0
Collector-Emitter Breakdown Voltage BVCEO 40 V IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage BVEBO 6 V IE = 10µA, IC = 0
Collector Current (Max) IC 200 mA
DC Current Gain (hFE) hFE 100 300 IC = 10mA, VCE = 1V
Collector-Emitter Saturation Voltage VCE(SAT) 300mV IB = 5mA, IC = 50mA
Power (Max) P 350 mW
Frequency - Transition fT 270 MHz
Mounting Type Surface Mount
Package / Case SOT-23-3, TO-236-3, SC-59

Key Features

  • High DC current gain: 100 to 300 at IC = 10mA, VCE = 1V
  • Low collector-emitter saturation voltage: up to 300mV at IB = 5mA, IC = 50mA
  • Collector-Emitter Breakdown Voltage: 40V
  • Complementary PNP type: MMBT3906T
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability
  • Ultra-Small Surface Mount Package: SOT-23-3, TO-236-3, SC-59

Applications

  • General-purpose switching and amplification in electronic circuits
  • Automotive applications due to AEC-Q101 qualification
  • Consumer electronics requiring small, reliable, and efficient transistors
  • Industrial control systems and automation

Q & A

  1. What is the maximum collector current of the MMBT3904LT3XT?

    The maximum collector current is 200mA

  2. What is the collector-emitter breakdown voltage of the MMBT3904LT3XT?

    The collector-emitter breakdown voltage is 40V

  3. What is the typical DC current gain of the MMBT3904LT3XT?

    The typical DC current gain is between 100 to 300 at IC = 10mA, VCE = 1V

  4. Is the MMBT3904LT3XT RoHS compliant?

    Yes, the MMBT3904LT3XT is totally Lead-Free & Fully RoHS Compliant

  5. What are the package options for the MMBT3904LT3XT?

    The package options include SOT-23-3, TO-236-3, and SC-59

  6. What is the maximum power dissipation of the MMBT3904LT3XT?

    The maximum power dissipation is 350mW

  7. Is the MMBT3904LT3XT suitable for automotive applications?

    Yes, it is qualified to AEC-Q101 Standards for High Reliability, making it suitable for automotive applications

  8. What is the complementary PNP type of the MMBT3904LT3XT?

    The complementary PNP type is MMBT3906T

  9. What is the typical collector-emitter saturation voltage of the MMBT3904LT3XT?

    The typical collector-emitter saturation voltage is up to 300mV at IB = 5mA, IC = 50mA

  10. Is the MMBT3904LT3XT halogen and antimony free?

    Yes, the MMBT3904LT3XT is halogen and antimony free and is considered a “Green” device

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:330 mW
Frequency - Transition:300MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

-
171

Please send RFQ , we will respond immediately.

Same Series
SMBT3904SH6327XTSA1
SMBT3904SH6327XTSA1
TRANS 2NPN 40V 0.2A SOT363
SMBT3904UPNE6327HTSA1
SMBT3904UPNE6327HTSA1
TRANS NPN/PNP 40V 0.2A SC74-6
SMBT3904SE6327HTSA1
SMBT3904SE6327HTSA1
TRANS 2NPN 40V 0.2A SOT363
SMBT 3904U E6327
SMBT 3904U E6327
TRANS 2NPN 40V 0.2A SC74-6
SMBT3904E6327HTSA1
SMBT3904E6327HTSA1
TRANS NPN 40V 0.2A SOT23
SMBT3904E6433HTMA1
SMBT3904E6433HTMA1
TRANS NPN 40V 0.2A SOT23
MMBT3904LT3XT
MMBT3904LT3XT
TRANS NPN 40V 0.2A SOT23
SMBT 3904 B5003
SMBT 3904 B5003
TRANS NPN 40V 0.2A SOT23

Related Product By Categories

BCX56-10TX
BCX56-10TX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
BC858BMTF
BC858BMTF
Fairchild Semiconductor
TRANS PNP 30V 0.1A SOT23-3
BLF3G21-30
BLF3G21-30
Ampleon USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
BD13610S
BD13610S
Fairchild Semiconductor
TRANS PNP 45V 1.5A TO126-3
MPS751-D26Z
MPS751-D26Z
onsemi
TRANS PNP 60V 2A TO92-3
BC856BMBYL
BC856BMBYL
Nexperia USA Inc.
TRANS PNP 60V 0.1A DFN1006B-3
BC846BQ-7-F
BC846BQ-7-F
Diodes Incorporated
SS MID-PERF TRANSISTOR SOT23 T&R
BC857CE6433HTMA1
BC857CE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BC857BT,115
BC857BT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
MMBT3904TT1
MMBT3904TT1
onsemi
TRANS NPN 40V 200MA SOT416
TIP30CTU
TIP30CTU
onsemi
TRANS PNP 100V 1A TO220-3
ST901TFP
ST901TFP
STMicroelectronics
TRANS NPN DARL 400V 4A TO220FP

Related Product By Brand

BAS21UE6327HTSA1
BAS21UE6327HTSA1
Infineon Technologies
DIODE ARRAY GP 200V 250MA SC74-6
BAV 70S H6327
BAV 70S H6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAS70-04E6327
BAS70-04E6327
Infineon Technologies
BAS70 - HIGH SPEED SWITCHING, CL
BAS28E6359HTMA1
BAS28E6359HTMA1
Infineon Technologies
DIODE GP 80V 100MA SOT143
BAS16-03WE6327
BAS16-03WE6327
Infineon Technologies
RECTIFIER DIODE, 0.25A, 80V
BCV62BE6433HTMA1
BCV62BE6433HTMA1
Infineon Technologies
TRANS 2PNP 30V 0.1A SOT143
BC 856BW E6433
BC 856BW E6433
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
BC 847C B5003
BC 847C B5003
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
IPD30N10S3L34ATMA1
IPD30N10S3L34ATMA1
Infineon Technologies
MOSFET N-CH 100V 30A TO252-3
FF600R12ME4CB11BOSA1
FF600R12ME4CB11BOSA1
Infineon Technologies
IGBT MOD 1200V 1060A 4050W
AUIR3315STRL
AUIR3315STRL
Infineon Technologies
IC PWR DRIVER N-CHAN 1:1 D2PAK
XDPE12284C0000XUMA1
XDPE12284C0000XUMA1
Infineon Technologies
IC REG LINEAR VOLTAGE NEG