MMBT3904LT3XT
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Infineon Technologies MMBT3904LT3XT

Manufacturer No:
MMBT3904LT3XT
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.2A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT3904LT3XT is an NPN silicon switching transistor produced by Infineon Technologies. This transistor is part of the MMBT3904 series, known for its high DC current gain and low collector-emitter saturation voltage, making it suitable for a variety of switching and amplification applications.

Key Specifications

Characteristic Symbol Min Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 60 V IC = 10µA, IE = 0
Collector-Emitter Breakdown Voltage BVCEO 40 V IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage BVEBO 6 V IE = 10µA, IC = 0
Collector Current (Max) IC 200 mA
DC Current Gain (hFE) hFE 100 300 IC = 10mA, VCE = 1V
Collector-Emitter Saturation Voltage VCE(SAT) 300mV IB = 5mA, IC = 50mA
Power (Max) P 350 mW
Frequency - Transition fT 270 MHz
Mounting Type Surface Mount
Package / Case SOT-23-3, TO-236-3, SC-59

Key Features

  • High DC current gain: 100 to 300 at IC = 10mA, VCE = 1V
  • Low collector-emitter saturation voltage: up to 300mV at IB = 5mA, IC = 50mA
  • Collector-Emitter Breakdown Voltage: 40V
  • Complementary PNP type: MMBT3906T
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability
  • Ultra-Small Surface Mount Package: SOT-23-3, TO-236-3, SC-59

Applications

  • General-purpose switching and amplification in electronic circuits
  • Automotive applications due to AEC-Q101 qualification
  • Consumer electronics requiring small, reliable, and efficient transistors
  • Industrial control systems and automation

Q & A

  1. What is the maximum collector current of the MMBT3904LT3XT?

    The maximum collector current is 200mA

  2. What is the collector-emitter breakdown voltage of the MMBT3904LT3XT?

    The collector-emitter breakdown voltage is 40V

  3. What is the typical DC current gain of the MMBT3904LT3XT?

    The typical DC current gain is between 100 to 300 at IC = 10mA, VCE = 1V

  4. Is the MMBT3904LT3XT RoHS compliant?

    Yes, the MMBT3904LT3XT is totally Lead-Free & Fully RoHS Compliant

  5. What are the package options for the MMBT3904LT3XT?

    The package options include SOT-23-3, TO-236-3, and SC-59

  6. What is the maximum power dissipation of the MMBT3904LT3XT?

    The maximum power dissipation is 350mW

  7. Is the MMBT3904LT3XT suitable for automotive applications?

    Yes, it is qualified to AEC-Q101 Standards for High Reliability, making it suitable for automotive applications

  8. What is the complementary PNP type of the MMBT3904LT3XT?

    The complementary PNP type is MMBT3906T

  9. What is the typical collector-emitter saturation voltage of the MMBT3904LT3XT?

    The typical collector-emitter saturation voltage is up to 300mV at IB = 5mA, IC = 50mA

  10. Is the MMBT3904LT3XT halogen and antimony free?

    Yes, the MMBT3904LT3XT is halogen and antimony free and is considered a “Green” device

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:330 mW
Frequency - Transition:300MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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