BCV49E6327HTSA1
  • Share:

Infineon Technologies BCV49E6327HTSA1

Manufacturer No:
BCV49E6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN DARL 60V 0.5A SOT89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCV49E6327HTSA1 is a bipolar junction transistor (BJT) produced by Infineon Technologies. This transistor is of the NPN Darlington type and is packaged in the SOT-89 (TO-243AA) surface mount format. Although the component is currently listed as obsolete and no longer manufactured, it remains relevant for legacy systems and maintenance purposes. The transistor is known for its high current gain and moderate power handling capabilities, making it suitable for various electronic applications.

Key Specifications

SpecificationValue
Voltage-Collector Emitter Breakdown (Max)60 V
Vce Saturation (Max) @ Ib1 V @ 100 µA, 100 mA
Operating Temperature-40°C to 150°C (TJ)
Current-Collector (Ic) (Max)500 mA
Current-Collector Cutoff (Max)10000 @ 100 mA, 5 V
DCCurrent Gain (hFE) (Min) @ Ic1000 (typical at Ic = 100 mA)
Frequency-Transition150 MHz
Package/CaseSOT-89 (TO-243AA)
Mounting TypeSurface Mount
Product StatusObsolete

Key Features

  • NPN Darlington Transistor: Provides high current gain and is suitable for applications requiring high amplification.
  • High Voltage Handling: With a collector-emitter breakdown voltage of 60 V, it can handle moderate to high voltage applications.
  • Surface Mount Package: The SOT-89 package is compact and suitable for surface mount technology, making it ideal for modern PCB designs.
  • Wide Operating Temperature Range: Operates from -40°C to 150°C, making it versatile for various environmental conditions.

Applications

The BCV49E6327HTSA1 transistor is suitable for a variety of applications, including but not limited to:

  • Power Amplification: Due to its high current gain, it is often used in power amplifiers and switching circuits.
  • Motor Control: It can be used in motor control circuits where high current and moderate voltage handling are required.
  • Industrial Automation: Suitable for use in industrial automation systems where reliability and high performance are critical.
  • Legacy Systems Maintenance: Given its obsolete status, it is particularly relevant for maintaining and repairing older electronic systems that still utilize this component.

Q & A

  1. What is the collector-emitter breakdown voltage of the BCV49E6327HTSA1 transistor?
    The collector-emitter breakdown voltage is 60 V.
  2. What is the maximum collector current (Ic) of the BCV49E6327HTSA1?
    The maximum collector current is 500 mA.
  3. What is the typical DC current gain (hFE) of the BCV49E6327HTSA1?
    The typical DC current gain is 1000 at Ic = 100 mA.
  4. What is the frequency-transition of the BCV49E6327HTSA1?
    The frequency-transition is 150 MHz.
  5. What is the package type of the BCV49E6327HTSA1?
    The package type is SOT-89 (TO-243AA).
  6. Is the BCV49E6327HTSA1 still in production?
    No, the BCV49E6327HTSA1 is listed as obsolete and is no longer manufactured.
  7. What are some common applications of the BCV49E6327HTSA1 transistor?
    Common applications include power amplification, motor control, industrial automation, and maintenance of legacy systems.
  8. What is the operating temperature range of the BCV49E6327HTSA1?
    The operating temperature range is from -40°C to 150°C (TJ).
  9. What is the Vce saturation voltage of the BCV49E6327HTSA1?
    The Vce saturation voltage is 1 V @ 100 µA, 100 mA.
  10. How is the BCV49E6327HTSA1 typically mounted?
    The BCV49E6327HTSA1 is a surface mount component.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:1V @ 100µA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:10000 @ 100mA, 5V
Power - Max:1 W
Frequency - Transition:150MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PG-SOT89
0 Remaining View Similar

In Stock

-
398

Please send RFQ , we will respond immediately.

Same Series
BCV29H6327XTSA1
BCV29H6327XTSA1
TRANS NPN DARL 30V 0.5A SOT89
BCV49H6327XTSA1
BCV49H6327XTSA1
TRANS NPN DARL 60V 0.5A SOT89
BCV29E6327HTSA1
BCV29E6327HTSA1
TRANS NPN DARL 30V 0.5A SOT89

Similar Products

Part Number BCV49E6327HTSA1 BCV29E6327HTSA1 BCV46E6327HTSA1 BCV47E6327HTSA1 BCV48E6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Not For New Designs Not For New Designs Obsolete
Transistor Type NPN - Darlington NPN - Darlington PNP - Darlington NPN - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 60 V 30 V 60 V 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 1V @ 100µA, 100mA 1V @ 100µA, 100mA 1V @ 100µA, 100mA 1V @ 100µA, 100mA 1V @ 100µA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA, 5V 20000 @ 100mA, 5V 10000 @ 100mA, 5V 10000 @ 100mA, 5V 10000 @ 100mA, 5V
Power - Max 1 W 1 W 360 mW 360 mW 1 W
Frequency - Transition 150MHz 150MHz 200MHz 170MHz 200MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-243AA
Supplier Device Package PG-SOT89 PG-SOT89 PG-SOT23 PG-SOT23 PG-SOT89

Related Product By Categories

BC807-25B5000
BC807-25B5000
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
BC817-25
BC817-25
Diotec Semiconductor
TRANS NPN 45V 0.8A SOT23-3
SMMBT2222ALT3G
SMMBT2222ALT3G
onsemi
TRANS NPN 40V 0.6A SOT23-3
BFS19,235
BFS19,235
Nexperia USA Inc.
TRANS NPN 20V 0.03A TO236AB
BC807-40/6215
BC807-40/6215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BCP53-10T115
BCP53-10T115
NXP USA Inc.
TRANS PNP 80V 1A SOT223
BC817-25 RFG
BC817-25 RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT23
BC857CE6433HTMA1
BC857CE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
NJVMJD350T4G
NJVMJD350T4G
onsemi
TRANS PNP 300V 0.5A DPAK
NSVMUN5237T1G
NSVMUN5237T1G
onsemi
NSVMUN5237 - NPN BIPOLAR DIGITAL
MJE340STU
MJE340STU
onsemi
TRANS NPN 300V 0.5A TO126-3
BCP56-10-QX
BCP56-10-QX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223

Related Product By Brand

BAV74E6327
BAV74E6327
Infineon Technologies
RECTIFIER DIODE
BC846SE6327BTSA1
BC846SE6327BTSA1
Infineon Technologies
TRANS 2NPN 65V 0.1A SOT363
BFG135AE6327XT
BFG135AE6327XT
Infineon Technologies
RF TRANS NPN 15V 6GHZ SOT223-4
BC 807-16 E6327
BC 807-16 E6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT-23
BCP 69US E6327
BCP 69US E6327
Infineon Technologies
TRANS PNP 20V 1A TSOP6-6
BC 817-40 E6327
BC 817-40 E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
IRF4905SPBF
IRF4905SPBF
Infineon Technologies
MOSFET P-CH 55V 42A D2PAK
FF600R12ME4B72BOSA1
FF600R12ME4B72BOSA1
Infineon Technologies
IGBT MOD 1200V 1200A 20MW
SAK-TC1796-256F150EBE
SAK-TC1796-256F150EBE
Infineon Technologies
IC MCU 32BIT 2MB FLASH 416PBGA
ITS716GFUMA1
ITS716GFUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-20
BSP75NNT
BSP75NNT
Infineon Technologies
IC PWR DRVR N-CHAN 1:1 SOT223-4