Overview
The BCV49H6327XTSA1 is a Darlington transistor array developed by Infineon Technologies. This NPN transistor is designed for high current gain applications and is particularly suited for automotive and other high-reliability environments due to its compliance with AEC-Q101 standards. The transistor is packaged in a SOT-89-3 format, making it suitable for surface mount technology (SMT) assembly. It offers a robust set of electrical and thermal characteristics, ensuring reliable performance across a wide range of operating conditions.
Key Specifications
Parameter | Value |
---|---|
Transistor Type | NPN Darlington |
Maximum Collector Emitter Voltage (Vce) | 60 V |
Maximum Continuous DC Collector Current (Ic) | 0.5 A |
Maximum Power Dissipation (Pd) | 1000 mW |
Maximum Emitter Base Voltage (Veb) | 10 V |
Base Emitter Saturation Voltage (Vbe(sat)) | 1.5 V @ 0.1 mA @ 100 mA |
Collector Emitter Saturation Voltage (Vce(sat)) | 1 V @ 0.1 mA @ 100 mA |
DC Current Gain (hfe) | 10000 @ 100 mA @ 5 V, 2000 @ 100 uA @ 1 V, 2000 @ 500 mA @ 5 V, 4000 @ 10 mA @ 5 V |
Operating Temperature Range | -65 °C to 150 °C |
Package Type | SOT-89-3 |
Mounting Type | Surface Mount |
Key Features
- High current gain due to Darlington configuration, making it suitable for applications requiring high amplification.
- AEC-Q101 qualified, ensuring reliability and performance in automotive and other demanding environments.
- Maximum collector emitter voltage of 60 V and maximum continuous DC collector current of 0.5 A.
- Maximum power dissipation of 1000 mW, allowing for robust operation in various conditions.
- Wide operating temperature range from -65 °C to 150 °C.
- SOT-89-3 package, suitable for surface mount technology (SMT) assembly.
Applications
The BCV49H6327XTSA1 Darlington transistor is primarily used in automotive applications due to its AEC-Q101 qualification. It is also suitable for other high-reliability environments such as industrial control systems, power management circuits, and general-purpose amplification in electronic devices. Its high current gain and robust electrical characteristics make it an ideal choice for driving high-current loads and providing reliable performance in harsh conditions.
Q & A
- What is the maximum collector emitter voltage of the BCV49H6327XTSA1?
The maximum collector emitter voltage is 60 V. - What is the maximum continuous DC collector current of this transistor?
The maximum continuous DC collector current is 0.5 A. - What is the maximum power dissipation of the BCV49H6327XTSA1?
The maximum power dissipation is 1000 mW. - What is the operating temperature range of this transistor?
The operating temperature range is from -65 °C to 150 °C. - Is the BCV49H6327XTSA1 suitable for automotive applications?
- What is the package type of the BCV49H6327XTSA1?
The package type is SOT-89-3.- What is the mounting type of this transistor?
The mounting type is surface mount.- What are the typical applications of the BCV49H6327XTSA1?
It is used in automotive, industrial control systems, power management circuits, and general-purpose amplification.- What are the key benefits of using a Darlington transistor like the BCV49H6327XTSA1?
The key benefits include high current gain, robust electrical characteristics, and reliability in harsh conditions.- Where can I find detailed specifications and datasheets for the BCV49H6327XTSA1?
You can find detailed specifications and datasheets on the official Infineon Technologies website or through distributors like Arrow Electronics, LCSC, etc. - What is the package type of the BCV49H6327XTSA1?