BCV49H6327XTSA1
  • Share:

Infineon Technologies BCV49H6327XTSA1

Manufacturer No:
BCV49H6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN DARL 60V 0.5A SOT89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCV49H6327XTSA1 is a Darlington transistor array developed by Infineon Technologies. This NPN transistor is designed for high current gain applications and is particularly suited for automotive and other high-reliability environments due to its compliance with AEC-Q101 standards. The transistor is packaged in a SOT-89-3 format, making it suitable for surface mount technology (SMT) assembly. It offers a robust set of electrical and thermal characteristics, ensuring reliable performance across a wide range of operating conditions.

Key Specifications

ParameterValue
Transistor TypeNPN Darlington
Maximum Collector Emitter Voltage (Vce)60 V
Maximum Continuous DC Collector Current (Ic)0.5 A
Maximum Power Dissipation (Pd)1000 mW
Maximum Emitter Base Voltage (Veb)10 V
Base Emitter Saturation Voltage (Vbe(sat))1.5 V @ 0.1 mA @ 100 mA
Collector Emitter Saturation Voltage (Vce(sat))1 V @ 0.1 mA @ 100 mA
DC Current Gain (hfe)10000 @ 100 mA @ 5 V, 2000 @ 100 uA @ 1 V, 2000 @ 500 mA @ 5 V, 4000 @ 10 mA @ 5 V
Operating Temperature Range-65 °C to 150 °C
Package TypeSOT-89-3
Mounting TypeSurface Mount

Key Features

  • High current gain due to Darlington configuration, making it suitable for applications requiring high amplification.
  • AEC-Q101 qualified, ensuring reliability and performance in automotive and other demanding environments.
  • Maximum collector emitter voltage of 60 V and maximum continuous DC collector current of 0.5 A.
  • Maximum power dissipation of 1000 mW, allowing for robust operation in various conditions.
  • Wide operating temperature range from -65 °C to 150 °C.
  • SOT-89-3 package, suitable for surface mount technology (SMT) assembly.

Applications

The BCV49H6327XTSA1 Darlington transistor is primarily used in automotive applications due to its AEC-Q101 qualification. It is also suitable for other high-reliability environments such as industrial control systems, power management circuits, and general-purpose amplification in electronic devices. Its high current gain and robust electrical characteristics make it an ideal choice for driving high-current loads and providing reliable performance in harsh conditions.

Q & A

  1. What is the maximum collector emitter voltage of the BCV49H6327XTSA1?
    The maximum collector emitter voltage is 60 V.
  2. What is the maximum continuous DC collector current of this transistor?
    The maximum continuous DC collector current is 0.5 A.
  3. What is the maximum power dissipation of the BCV49H6327XTSA1?
    The maximum power dissipation is 1000 mW.
  4. What is the operating temperature range of this transistor?
    The operating temperature range is from -65 °C to 150 °C.
  5. Is the BCV49H6327XTSA1 suitable for automotive applications?
  6. What is the package type of the BCV49H6327XTSA1?
    The package type is SOT-89-3.
  7. What is the mounting type of this transistor?
    The mounting type is surface mount.
  8. What are the typical applications of the BCV49H6327XTSA1?
    It is used in automotive, industrial control systems, power management circuits, and general-purpose amplification.
  9. What are the key benefits of using a Darlington transistor like the BCV49H6327XTSA1?
    The key benefits include high current gain, robust electrical characteristics, and reliability in harsh conditions.
  10. Where can I find detailed specifications and datasheets for the BCV49H6327XTSA1?
    You can find detailed specifications and datasheets on the official Infineon Technologies website or through distributors like Arrow Electronics, LCSC, etc.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:1V @ 100µA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:10000 @ 100mA, 5V
Power - Max:1 W
Frequency - Transition:150MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PG-SOT89
0 Remaining View Similar

In Stock

$0.28
2,213

Please send RFQ , we will respond immediately.

Same Series
BCV29H6327XTSA1
BCV29H6327XTSA1
TRANS NPN DARL 30V 0.5A SOT89
BCV49H6327XTSA1
BCV49H6327XTSA1
TRANS NPN DARL 60V 0.5A SOT89
BCV29E6327HTSA1
BCV29E6327HTSA1
TRANS NPN DARL 30V 0.5A SOT89

Similar Products

Part Number BCV49H6327XTSA1 BCV29H6327XTSA1 BCV48H6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs
Transistor Type NPN - Darlington NPN - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 60 V 30 V 60 V
Vce Saturation (Max) @ Ib, Ic 1V @ 100µA, 100mA 1V @ 100µA, 100mA 1V @ 100µA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA, 5V 20000 @ 100mA, 5V 10000 @ 100mA, 5V
Power - Max 1 W 1 W 1 W
Frequency - Transition 150MHz 150MHz 200MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA
Supplier Device Package PG-SOT89 PG-SOT89 PG-SOT89

Related Product By Categories

BC817-25-7-F
BC817-25-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
2SC5658M3T5G
2SC5658M3T5G
onsemi
TRANS NPN 50V 0.1A SOT723
2PB709ARW,115
2PB709ARW,115
NXP USA Inc.
NOW NEXPERIA 2PB709ARW - SMALL S
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
NSS20200LT1G
NSS20200LT1G
onsemi
TRANS PNP 20V 2A SOT23-3
MJD44H11J
MJD44H11J
Nexperia USA Inc.
TRANS NPN 80V 8A DPAK
BFU910F115
BFU910F115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
MJD50TF
MJD50TF
onsemi
TRANS NPN 400V 1A DPAK
BCX53-TP
BCX53-TP
Micro Commercial Co
TRANS PNP 80V 1A SOT89
BC857CWE6327BTSA1
BC857CWE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
BCP56-10-QX
BCP56-10-QX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BC817-25-QR
BC817-25-QR
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB

Related Product By Brand

BAV 70S H6327
BAV 70S H6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAV 99 B5003
BAV 99 B5003
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BAT54WE6327
BAT54WE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC817UPNE6327HTSA1
BC817UPNE6327HTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.5A SC74
BC858B
BC858B
Infineon Technologies
TRANS PNP 30V 0.1A SOT23-3
BCV26E327
BCV26E327
Infineon Technologies
TRANS PNP DARL 30V 0.5A SOT23
MMBTA42LT1HTSA1
MMBTA42LT1HTSA1
Infineon Technologies
TRANS NPN 300V 0.5A SOT23
BSC016N06NSATMA1
BSC016N06NSATMA1
Infineon Technologies
MOSFET N-CH 60V 30A/100A TDSON
BSS138W E6433
BSS138W E6433
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
SAK-TC1796-256F150EBE
SAK-TC1796-256F150EBE
Infineon Technologies
IC MCU 32BIT 2MB FLASH 416PBGA
BTN8962TAAUMA1
BTN8962TAAUMA1
Infineon Technologies
IC MOTOR DRIVER PAR TO263-7
FM25L16B-GTR
FM25L16B-GTR
Infineon Technologies
IC FRAM 16KBIT SPI 20MHZ 8SOIC