2N7002-7-G
  • Share:

Diodes Incorporated 2N7002-7-G

Manufacturer No:
2N7002-7-G
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002-7-G, produced by Diodes Incorporated, is an N-channel enhancement mode field effect transistor (MOSFET). This device is designed to minimize on-state resistance while maintaining superior switching performance, making it ideal for high-efficiency power management applications. The 2N7002 is part of a family of MOSFETs that are particularly suited for low-voltage, low-current applications.

Key Specifications

Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage VDGR 60 V
Gate-Source Voltage (Continuous) VGSS ±20 V
Gate-Source Voltage (Pulsed) VGSS ±40 V
Continuous Drain Current (VGS = 10V, TA = +25°C) ID 170 mA
Continuous Drain Current (VGS = 10V, TA = +85°C) ID 120 mA
Continuous Drain Current (VGS = 10V, TA = +100°C) ID 105 mA
Maximum Drain Current (Pulsed, VGS = 10V) ID 210 mA
Static Drain-Source On-Resistance (VGS = 10V, ID = 500mA) RDS(on) 7.5 Ω
Gate Threshold Voltage VGS(th) 1 - 2.5 V
Input Capacitance Ciss 22 - 50 pF
Output Capacitance Coss 11 - 25 pF
Reverse Transfer Capacitance Crss 2.0 - 5.0 pF

Key Features

  • Low On-Resistance: Minimized on-state resistance for efficient power management.
  • Low Gate Threshold Voltage: Ensures easy switching with low gate voltage.
  • Low Input Capacitance: Reduces the capacitance load on the gate driver.
  • Fast Switching Speed: Ideal for applications requiring quick switching times.
  • Small Surface Mount Package: SOT-23 package for compact designs.
  • Totally Lead-Free & Fully RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
  • Halogen and Antimony Free: “Green” device suitable for eco-friendly designs.

Applications

  • Motor Control: Suitable for small servo motor control and other motor control applications.
  • Power Management Functions: Ideal for high-efficiency power management in various electronic systems.
  • Power MOSFET Gate Drivers: Used in driving power MOSFETs in various switching applications.
  • Other Switching Applications: General-purpose switching in low-voltage, low-current scenarios.

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the 2N7002-7-G?

    The maximum drain-source voltage (VDSS) is 60V.

  2. What is the continuous drain current (ID) at TA = +25°C with VGS = 10V?

    The continuous drain current (ID) is 170mA at TA = +25°C with VGS = 10V.

  3. What is the static drain-source on-resistance (RDS(on)) at VGS = 10V and ID = 500mA?

    The static drain-source on-resistance (RDS(on)) is 7.5Ω at VGS = 10V and ID = 500mA.

  4. What is the gate threshold voltage (VGS(th)) range?

    The gate threshold voltage (VGS(th)) range is 1 to 2.5V.

  5. What are the typical applications of the 2N7002-7-G?

    Typical applications include motor control, power management functions, and power MOSFET gate drivers.

  6. Is the 2N7002-7-G RoHS compliant?

    Yes, the 2N7002-7-G is totally lead-free and fully RoHS compliant.

  7. What is the package type of the 2N7002-7-G?

    The package type is SOT-23.

  8. What is the maximum power dissipation of the 2N7002-7-G?

    The maximum power dissipation is 400mW, derated above 25°C.

  9. What is the operating temperature range of the 2N7002-7-G?

    The operating temperature range is -55°C to 150°C.

  10. Is the 2N7002-7-G halogen and antimony free?

    Yes, the 2N7002-7-G is halogen and antimony free, making it a “green” device.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
578

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE20/AA
RD15S10HE20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
DD26S2000X/AA
DD26S2000X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JT2S
DD15S20JT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S0TS/AA
DD44S32S0TS/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S200V3X
DD26S200V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V30/AA
DD26S200V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S20W0X/AA
DD26S20W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20J0X
DD26S20J0X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V5S
CBC47W1S1S50V5S
CONN D-SUB RCPT 47POS CRIMP

Related Product By Categories

BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

BAT54V-7
BAT54V-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT563
MBRB20200CT-13
MBRB20200CT-13
Diodes Incorporated
DIODE SCHOTTKY 200V 20A D2PAK
BAS40DW-04-7-F
BAS40DW-04-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT363
BAV23CQ-7-F
BAV23CQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAS16-7-G
BAS16-7-G
Diodes Incorporated
DIODE GEN PURP SOT23-3
BZX84C2V7T-7-F
BZX84C2V7T-7-F
Diodes Incorporated
DIODE ZENER 2.7V 150MW SOT523
BZX84C12Q-7-F
BZX84C12Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
BZX84C20Q-13-F
BZX84C20Q-13-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 10K
BZT52HC18WFQ-7
BZT52HC18WFQ-7
Diodes Incorporated
DIODE ZENER 18V 375MW SOD123F
BZX84C39T-7-F
BZX84C39T-7-F
Diodes Incorporated
DIODE ZENER 39V 150MW SOT523
BZX84C4V7-7
BZX84C4V7-7
Diodes Incorporated
DIODE ZENER 4.7V 300MW SOT23-3
BZX84B5V6-7-F-79
BZX84B5V6-7-F-79
Diodes Incorporated
DIODE ZENER