BAT46W-HE3-18
  • Share:

Vishay General Semiconductor - Diodes Division BAT46W-HE3-18

Manufacturer No:
BAT46W-HE3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 100V 150MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT46W-HE3-18 is a small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for general purpose applications and is known for its very low turn-on voltage and fast switching capabilities. It is AEC-Q101 qualified, making it suitable for automotive and other demanding environments. The device is packaged in a SOD-123 format and is RoHS-compliant, ensuring environmental compliance and reliability.

Key Specifications

Parameter Value Unit
Repetitive Peak Reverse Voltage (VRRM) 100 V
Forward Continuous Current (IF) 200 mA
Repetitive Peak Forward Current (IFRM) 350 mA
Surge Forward Current (IFSM) 750 mA
Power Dissipation on FR-4 Board 270 mW
Thermal Resistance Junction to Ambient Air 370 K/W
Junction Temperature (Tj) 125 °C
Storage Temperature Range (Tstg) -65 to +150 °C
Operating Temperature Range (Top) -55 to +125 °C
Forward Voltage (VF) at IF = 0.1 mA 250 mV
Diode Capacitance (CD) at VR = 0 V, f = 1 MHz 10 pF

Key Features

  • Very low turn-on voltage and fast switching capabilities.
  • AEC-Q101 qualified for automotive applications.
  • RoHS-compliant and meets UL 94 V-0 flammability rating.
  • Moisture Sensitivity Level (MSL) 1.
  • Protected by a PN junction guard ring.
  • Low forward voltage and high surge current capability.
  • High reliability and stability over a wide temperature range.

Applications

  • General purpose rectification and polarity protection.
  • Signal switching applications.
  • Automotive systems due to AEC-Q101 qualification.
  • Industrial and consumer electronics requiring low forward voltage and fast switching.
  • High-frequency applications where low capacitance is essential.

Q & A

  1. What is the repetitive peak reverse voltage (VRRM) of the BAT46W-HE3-18?

    The repetitive peak reverse voltage (VRRM) is 100 V.

  2. What is the forward continuous current (IF) rating of this diode?

    The forward continuous current (IF) is 200 mA.

  3. Is the BAT46W-HE3-18 AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.

  4. What is the thermal resistance junction to ambient air for this diode?

    The thermal resistance junction to ambient air is 370 K/W.

  5. What is the junction temperature (Tj) rating of the BAT46W-HE3-18?

    The junction temperature (Tj) is 125 °C.

  6. What is the storage temperature range for this diode?

    The storage temperature range is -65 to +150 °C.

  7. What is the operating temperature range for the BAT46W-HE3-18?

    The operating temperature range is -55 to +125 °C.

  8. What is the typical forward voltage (VF) at a forward current of 0.1 mA?

    The typical forward voltage (VF) at 0.1 mA is 250 mV.

  9. What is the diode capacitance (CD) at VR = 0 V and f = 1 MHz?

    The diode capacitance (CD) is 10 pF at VR = 0 V and f = 1 MHz.

  10. Is the BAT46W-HE3-18 RoHS-compliant?

    Yes, it is RoHS-compliant.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):150mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 250 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 75 V
Capacitance @ Vr, F:6pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

$0.44
1,122

Please send RFQ , we will respond immediately.

Same Series
BAT46W-E3-18
BAT46W-E3-18
DIODE SCHOTTKY 100V 150MA SOD123
BAT46W-HE3-18
BAT46W-HE3-18
DIODE SCHOTTKY 100V 150MA SOD123
BAT46W-E3-08
BAT46W-E3-08
DIODE SCHOTTKY 100V 150MA SOD123

Similar Products

Part Number BAT46W-HE3-18 BAT42W-HE3-18 BAT43W-HE3-18 BAT46W-E3-18 BAT46W-HE3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 30 V 30 V 100 V 100 V
Current - Average Rectified (Io) 150mA (DC) 200mA (DC) 200mA (DC) 150mA (DC) 150mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 250 mA 650 mV @ 50 mA 450 mV @ 15 mA 1 V @ 250 mA 1 V @ 250 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) - 5 ns 5 ns - -
Current - Reverse Leakage @ Vr 5 µA @ 75 V 500 nA @ 25 V 500 nA @ 25 V 5 µA @ 75 V 5 µA @ 75 V
Capacitance @ Vr, F 6pF @ 1V, 1MHz 7pF @ 1V, 1MHz 7pF @ 1V, 1MHz 6pF @ 1V, 1MHz 6pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123 SOD-123 SOD-123 SOD-123 SOD-123
Supplier Device Package SOD-123 SOD-123 SOD-123 SOD-123 SOD-123
Operating Temperature - Junction 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max)

Related Product By Categories

BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
MUR115G
MUR115G
onsemi
DIODE GEN PURP 150V 1A AXIAL
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
STPS2H100A
STPS2H100A
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMA
MBRS130L
MBRS130L
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 2A, 30V
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
FFSB10120A-F085
FFSB10120A-F085
onsemi
1200V 10A AUTO SIC SBD
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

SM6T30CAHE3_A/I
SM6T30CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AA
SM6T30CAHM3_A/I
SM6T30CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AA
SM15T22AHM3_A/H
SM15T22AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
SM15T12AHE3/57T
SM15T12AHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
SM15T7V5AHE3_A/H
SM15T7V5AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 6.4VWM 11.3VC DO214AB
MBR1545CT/45
MBR1545CT/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 45V TO220AB
BAS16WS-E3-08
BAS16WS-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
BAS16D-HE3-08
BAS16D-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD123
BYW29-200-E3/45
BYW29-200-E3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
1N4007GPHE3/54
1N4007GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
1N4004GPEHE3/93
1N4004GPEHE3/93
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
BZX84B13-HE3-08
BZX84B13-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 13V 300MW SOT23-3