CSD23201W10
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Texas Instruments CSD23201W10

Manufacturer No:
CSD23201W10
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 12V 2.2A 4DSBGA
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The CSD23201W10 is a high-performance, N-channel MOSFET produced by Texas Instruments. Designed for power management applications, this component is part of the NexFET™ Power MOSFET family, known for its efficiency and reliability. The CSD23201W10 is specifically optimized for applications requiring low on-resistance and high switching speeds, making it ideal for use in DC-DC converters, load switches, and battery management systems. Its compact WSON package ensures space efficiency, catering to modern, compact electronic designs. The product is targeted at engineers and designers in the consumer electronics, industrial, and automotive sectors who prioritize energy efficiency and thermal performance.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)20V
Continuous Drain Current (ID)10.6A@ TC = 25°C
On-Resistance (RDS(on))2.1@ VGS = 4.5V
Gate-Source Voltage (VGS)±12V
Power Dissipation (PD)3.3W@ TA = 25°C
Operating Temperature Range-55 to 150°C
PackageWSON-10Compact surface-mount package

Key Features

  • Low on-resistance (RDS(on)) for reduced power loss and improved efficiency.
  • High switching speed, enabling faster response times in power management applications.
  • Compact WSON-10 package, suitable for space-constrained designs.
  • Excellent thermal performance, ensuring reliability under high-power conditions.
  • Optimized for use in DC-DC converters, load switches, and battery management systems.

Applications

The CSD23201W10 is widely used in various industries due to its efficiency and reliability. Key applications include:

  • Consumer Electronics: Power management in smartphones, tablets, and laptops.
  • Industrial Automation: Motor control and power distribution systems.
  • Automotive Electronics: Battery management systems and LED lighting control.
  • DC-DC Converters: Efficient voltage regulation in power supplies.

Q & A

1. What is the maximum drain-source voltage for the CSD23201W10?

The maximum drain-source voltage (VDS) is 20V.

2. What is the typical on-resistance of this MOSFET?

The typical on-resistance (RDS(on)) is 2.1mΩ at a gate-source voltage of 4.5V.

3. What package does the CSD23201W10 come in?

It is available in a compact WSON-10 package.

4. What is the continuous drain current rating?

The continuous drain current (ID) is 10.6A at 25°C.

5. Is this MOSFET suitable for high-frequency switching applications?

Yes, the CSD23201W10 is optimized for high switching speeds, making it ideal for such applications.

6. What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

7. Can this MOSFET be used in automotive applications?

Yes, it is suitable for automotive applications such as battery management systems and LED lighting control.

8. What is the power dissipation rating?

The power dissipation (PD) is 3.3W at 25°C.

9. How does the low on-resistance benefit the application?

Low on-resistance reduces power loss, improving efficiency and thermal performance.

10. Where can I find detailed technical specifications for this MOSFET?

Detailed specifications can be found in the official datasheet provided by Texas Instruments or on distributor websites like Digi-Key or Mouser.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:82mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.4 nC @ 4.5 V
Vgs (Max):-6V
Input Capacitance (Ciss) (Max) @ Vds:325 pF @ 6 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-DSBGA (1x1)
Package / Case:4-UFBGA, DSBGA
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Similar Products

Part Number CSD23201W10 CSD23202W10
Manufacturer Texas Instruments Texas Instruments
Product Status Obsolete Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 12 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc) 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 82mOhm @ 500mA, 4.5V 53mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.4 nC @ 4.5 V 3.8 nC @ 4.5 V
Vgs (Max) -6V -6V
Input Capacitance (Ciss) (Max) @ Vds 325 pF @ 6 V 512 pF @ 6 V
FET Feature - -
Power Dissipation (Max) 1W (Ta) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 4-DSBGA (1x1) 4-DSBGA (1x1)
Package / Case 4-UFBGA, DSBGA 4-UFBGA, DSBGA

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