CSD16342Q5A
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Texas Instruments CSD16342Q5A

Manufacturer No:
CSD16342Q5A
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 25V 100A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD16342Q5A is a state-of-the-art N-Channel NexFET™ Power MOSFET manufactured by Texas Instruments. This device is designed to deliver high performance with low on-resistance and minimal power loss, making it an ideal choice for various power management applications. The MOSFET is packaged in an 8-pin VSONP-8 (5mm x 6mm) case, ensuring a compact footprint while maintaining high efficiency and reliability.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (VDS) 25 V
Continuous Drain Current (ID) 100 A
Gate to Source Threshold Voltage (VGS(th)) 0.6 - 1.1 V
Drain to Source On Resistance (RDS(on)) at VGS = 4.5V 4.3 mΩ
Drain to Source On Resistance (RDS(on)) at VGS = 8V 3.8 mΩ
Gate Charge Total (Qg) at VGS = 4.5V 6.8 nC
Gate Charge Gate to Drain (Qgd) at VGS = 2.5V 1.2 nC
Thermal Resistance Junction to Case (RθJC) 1.2 °C/W
Thermal Resistance Junction to Ambient (RθJA) 50 °C/W
Maximum Operating Temperature 150 °C
Minimum Operating Temperature -55 °C
Power Dissipation (Pd) 3 W

Key Features

  • Optimized for 5V gate drive, with low on-resistance and minimal power loss.
  • Ultra-low gate charge (Qg) and gate charge gate to drain (Qgd).
  • Low thermal resistance, enhancing heat dissipation and reliability.
  • Avalanche rated, ensuring robust performance under high stress conditions.
  • Pb-free terminal plating and RoHS compliant, meeting environmental standards.
  • Halogen-free, contributing to a safer and more environmentally friendly product.

Applications

  • Point-of-Load (POL) synchronous buck converters.
  • Power management systems where high efficiency and low power loss are critical.
  • Load switching and DC-DC conversion applications.
  • Various power management applications requiring high performance and reliability).

Q & A

  1. What is the maximum drain to source voltage (VDS) of the CSD16342Q5A?

    The maximum drain to source voltage (VDS) is 25V.

  2. What is the typical on-resistance (RDS(on)) at VGS = 4.5V?

    The typical on-resistance (RDS(on)) at VGS = 4.5V is 4.3 mΩ).

  3. What is the gate to source threshold voltage (VGS(th)) range?

    The gate to source threshold voltage (VGS(th)) range is 0.6V to 1.1V).

  4. What is the thermal resistance junction to case (RθJC)?

    The thermal resistance junction to case (RθJC) is 1.2 °C/W).

  5. Is the CSD16342Q5A RoHS compliant?

    Yes, the CSD16342Q5A is RoHS compliant).

  6. What are the typical applications of the CSD16342Q5A?

    The CSD16342Q5A is typically used in point-of-load synchronous buck converters, power management systems, load switching, and DC-DC conversion applications).

  7. What is the package type of the CSD16342Q5A?

    The package type is VSONP-8 (5mm x 6mm)).

  8. What is the maximum operating temperature of the CSD16342Q5A?

    The maximum operating temperature is 150°C).

  9. What is the gate charge total (Qg) at VGS = 4.5V?

    The gate charge total (Qg) at VGS = 4.5V is 6.8 nC).

  10. Is the CSD16342Q5A halogen-free?

    Yes, the CSD16342Q5A is halogen-free).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 8V
Rds On (Max) @ Id, Vgs:4.7mOhm @ 20A, 8V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.1 nC @ 4.5 V
Vgs (Max):+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 12.5 V
FET Feature:- 
Power Dissipation (Max):3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
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