CSD15571Q2
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Texas Instruments CSD15571Q2

Manufacturer No:
CSD15571Q2
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 22A 6SON
Delivery:
Payment:
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Product Introduction

Overview

The CSD15571Q2 is a high-performance N-channel MOSFET produced by Texas Instruments (TI). Designed for power management applications, this component is part of TI's NexFET™ Power MOSFET series, known for its efficiency and reliability. The CSD15571Q2 is optimized for low-voltage, high-frequency switching applications, making it ideal for use in DC-DC converters, motor drives, and load switches. Its compact package and low on-resistance (RDS(on)) ensure minimal power loss and high thermal performance, catering to industries such as automotive, industrial, and consumer electronics.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)30VMaximum
Continuous Drain Current (ID)10AAt TC = 25°C
On-Resistance (RDS(on))6.5At VGS = 10V
Gate-Source Voltage (VGS)±20VMaximum
Power Dissipation (PD)2.5WAt TA = 25°C
Operating Junction Temperature (TJ)-55 to +150°CRange
PackageSON 3.3x3.3-Compact footprint

Key Features

  • Low on-resistance (RDS(on)) for reduced power loss.
  • High-speed switching capability for efficient power management.
  • Compact SON package for space-constrained applications.
  • Robust thermal performance for reliable operation in high-temperature environments.
  • Optimized for low-voltage applications, enhancing energy efficiency.

Applications

The CSD15571Q2 is widely used in various applications, including:

  • DC-DC Converters: Its low RDS(on) and high switching speed make it ideal for step-down and step-up converters.
  • Motor Drives: Ensures efficient control and power delivery in motor drive systems.
  • Load Switches: Provides reliable switching for power distribution in consumer electronics and industrial systems.
  • Automotive Systems: Suitable for automotive power management due to its durability and thermal performance.

Q & A

1. What is the maximum drain-source voltage for the CSD15571Q2?

The maximum drain-source voltage (VDS) is 30V.

2. What is the typical on-resistance (RDS(on)) of this MOSFET?

The typical RDS(on) is 6.5 mΩ at VGS = 10V.

3. Can the CSD15571Q2 be used in automotive applications?

Yes, it is suitable for automotive power management due to its robust thermal performance and reliability.

4. What is the operating temperature range for this component?

The operating junction temperature (TJ) ranges from -55°C to +150°C.

5. What package does the CSD15571Q2 use?

It uses a compact SON 3.3x3.3 package.

6. Is this MOSFET optimized for high-frequency switching?

Yes, it is designed for high-speed switching applications.

7. What is the continuous drain current (ID) at 25°C?

The continuous drain current is 10A at TC = 25°C.

8. What is the maximum gate-source voltage (VGS)?

The maximum VGS is ±20V.

9. What is the power dissipation (PD) of the CSD15571Q2?

The power dissipation is 2.5W at TA = 25°C.

10. What are the typical applications of the CSD15571Q2?

Typical applications include DC-DC converters, motor drives, load switches, and automotive systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:22A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:15mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:419 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-SON (2x2)
Package / Case:6-WDFN Exposed Pad
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Similar Products

Part Number CSD15571Q2 CSD17571Q2
Manufacturer Texas Instruments Texas Instruments
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 22A (Ta) 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 5A, 10V 29mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1.9V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.7 nC @ 10 V 3.1 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 419 pF @ 10 V 468 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-SON (2x2) 6-SON (2x2)
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad

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