Overview
The BAS85 L1, produced by Taiwan Semiconductor Corporation, is a small signal Schottky diode designed for high-speed rectification in various demanding applications. This diode is encapsulated in a MiniMELF (DO-213AC, SOD-80) package, which is hermetically sealed and suitable for surface mount technology. The BAS85 L1 is known for its low forward voltage, high breakdown voltage, and fast switching capabilities, making it an ideal choice for applications requiring efficient and reliable rectification.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type | Schottky | |
| Package / Case | DO-213AC, MINI-MELF, SOD-80 | |
| Mounting Type | Surface Mount | |
| Voltage - Forward (Vf) (Max) @ If | 900 mV @ 100 mA | |
| Voltage - DC Reverse (Vr) (Max) | 30 V | |
| Current - Average Rectified (Io) | 200 mA | |
| Current - Reverse Leakage @ Vr | 2 µA @ 25 V | |
| Reverse Recovery Time (trr) | 5 ns | |
| Capacitance @ Vr, F | 10 pF @ 1 V, 1 MHz | |
| Operating Temperature - Junction | 125°C (Max) | |
| Power Dissipation (Ptot) | 200 mW |
Key Features
- Low forward voltage, typically 900 mV at 100 mA, ensuring low power loss during operation.
- High breakdown voltage of up to 30 V, providing robust protection against reverse voltage.
- Fast switching with a reverse recovery time of 5 ns, suitable for high-speed applications.
- Hermetically sealed glass SMD package (MiniMELF) for reliability and durability.
- Surface mount technology for easy integration into modern PCB designs.
- Low capacitance of 10 pF at 1 V and 1 MHz, minimizing signal distortion.
Applications
- Ultra high-speed switching circuits where fast recovery times are crucial.
- Voltage clamping and protection circuits to safeguard against voltage spikes.
- Blocking diodes in power supply and power management systems.
- General-purpose rectification in electronic devices requiring low forward voltage drop.
Q & A
- Q: What is the maximum forward current of the BAS85 L1?
A: The maximum forward continuous current (IF) of the BAS85 L1 is 200 mA, with a peak forward current (IFM) of 300 mA and a surge forward current (IFSM) of 600 mA for a short duration (tp < 1 s).
- Q: What is the reverse recovery time of the BAS85 L1?
A: The reverse recovery time (trr) of the BAS85 L1 is 5 ns, making it suitable for high-speed switching applications.
- Q: What is the operating temperature range of the BAS85 L1?
A: The operating temperature range of the BAS85 L1 is from -55°C to 125°C, with a maximum junction temperature of 125°C.
- Q: What is the package type of the BAS85 L1?
A: The BAS85 L1 is packaged in a MiniMELF (DO-213AC, SOD-80) hermetically sealed glass SMD package.
- Q: Is the BAS85 L1 RoHS compliant?
A: Yes, the BAS85 L1 is RoHS compliant, ensuring it meets environmental regulations.
- Q: What are the typical applications of the BAS85 L1?
A: The BAS85 L1 is typically used in ultra high-speed switching, voltage clamping, protection circuits, and as blocking diodes in various electronic systems.
- Q: How does the BAS85 L1 ensure low power loss during operation?
A: The BAS85 L1 ensures low power loss due to its low forward voltage, typically 900 mV at 100 mA, which minimizes the voltage drop across the diode during operation.
- Q: What is the capacitance of the BAS85 L1 at 1 V and 1 MHz?
A: The capacitance of the BAS85 L1 at 1 V and 1 MHz is 10 pF, which helps in minimizing signal distortion in high-frequency applications.
- Q: Is the BAS85 L1 suitable for surface mount technology?
A: Yes, the BAS85 L1 is designed for surface mount technology, making it easy to integrate into modern PCB designs.
- Q: What is the warranty period for the BAS85 L1 from Ovaga Technologies?
A: Ovaga Technologies offers a 1-year warranty on the BAS85 L1, covering any defects in materials and workmanship under normal use.
- Q: How does Ovaga ensure the authenticity of the BAS85 L1 from Taiwan Semiconductor?
A: Ovaga ensures the authenticity of the BAS85 L1 by sourcing from reliable channels and conducting rigorous testing and verification of the suppliers.
