Overview
The BAS85-L0 L0 is a small signal Schottky diode manufactured by Taiwan Semiconductor Corporation. This diode is designed for applications where low forward voltage drop and high switching speed are required. It is packaged in a mini MELF (Metal Electrode Leadless Face) case, which is suitable for surface mount technology. The BAS85-L0 L0 is known for its high efficiency and reliability in various electronic circuits.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 30 V | |
| Voltage - Forward (Vf) (Max) @ If | 800 mV @ 100 mA | |
| Current - Average Rectified (Io) | 200 mA | |
| Peak Forward Current (IFM) | 300 mA | |
| Surge Forward Current (IFSM) | 600 mA (tp < 1 s) | |
| Power Dissipation (Ptot) | 200 mW (Tamb = 65 °C) | |
| Reverse Recovery Time (trr) | 5 ns | |
| Current - Reverse Leakage @ Vr | 2 µA @ 25 V | |
| Capacitance @ Vr, F | 10 pF @ 1 V, 1 MHz | |
| Operating Temperature - Junction | -55 to +125 °C | |
| Mounting Type | Surface Mount | |
| Package / Case | DO-213AC, MINI-MELF, SOD-80 | |
| Technology | Schottky |
Key Features
- Low Forward Voltage Drop: The BAS85-L0 L0 features a low forward voltage drop of 800 mV at 100 mA, making it efficient for applications requiring minimal voltage loss.
- High Switching Speed: With a reverse recovery time of 5 ns, this diode is suitable for high-frequency applications.
- Surface Mount Technology: The mini MELF package is designed for surface mount technology, facilitating easy integration into modern electronic designs.
- High Reliability: The diode is ROHS3 compliant and has a wide operating temperature range of -55 to +125 °C, ensuring reliability in various environmental conditions.
- Low Reverse Leakage Current: The diode has a low reverse leakage current of 2 µA at 25 V, which helps in minimizing power consumption in standby modes.
Applications
The BAS85-L0 L0 is suitable for a variety of applications where low forward voltage drop and high switching speed are critical. These include:
- Switching Power Supplies: Due to its low forward voltage and high switching speed, it is ideal for use in switching power supplies and DC-DC converters.
- High-Frequency Circuits: The diode's fast recovery time makes it suitable for high-frequency circuits, such as RF and microwave applications.
- Audio and Video Equipment: It can be used in audio and video equipment to improve signal quality by reducing voltage drop and noise.
- Automotive Electronics: The diode's robustness and wide operating temperature range make it a good choice for automotive electronics.
Q & A
- What is the maximum DC reverse voltage of the BAS85-L0 L0?
The maximum DC reverse voltage is 30 V.
- What is the forward voltage drop at 100 mA for the BAS85-L0 L0?
The forward voltage drop at 100 mA is 800 mV.
- What is the reverse recovery time of the BAS85-L0 L0?
The reverse recovery time is 5 ns.
- What is the maximum average rectified current for the BAS85-L0 L0?
The maximum average rectified current is 200 mA.
- What is the operating temperature range for the BAS85-L0 L0?
The operating temperature range is -55 to +125 °C.
- Is the BAS85-L0 L0 ROHS compliant?
Yes, the BAS85-L0 L0 is ROHS3 compliant.
- What is the package type of the BAS85-L0 L0?
The package type is DO-213AC, MINI-MELF, SOD-80.
- What is the typical application of the BAS85-L0 L0?
Typical applications include switching power supplies, high-frequency circuits, audio and video equipment, and automotive electronics.
- What is the surge forward current rating for the BAS85-L0 L0?
The surge forward current rating is 600 mA for a pulse duration less than 1 second.
- What is the power dissipation limit for the BAS85-L0 L0 at 65 °C ambient temperature?
The power dissipation limit is 200 mW at 65 °C ambient temperature.
