STY80NM60N
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STMicroelectronics STY80NM60N

Manufacturer No:
STY80NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 74A MAX247
Delivery:
Payment:
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Product Introduction

Overview

The STY80NM60N is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is part of the MDmesh(TM) II family, known for its innovative vertical structure and strip layout, which results in one of the world's lowest on-resistance and gate charge. Although the STY80NM60N is currently obsolete and no longer manufactured, it remains a significant example of advanced power MOSFET technology.

Key Specifications

ParameterValue
Voltage Rating (Vds)600 V
On-Resistance (Rds(on))0.030 Ohm
Continuous Drain Current (Id)74 A (at Tc)
Power Dissipation (Pd)447 W (at Tc)
Package TypeThrough Hole MAX247

Key Features

  • Low on-resistance (Rds(on)) of 0.030 Ohm, minimizing energy losses.
  • Low gate charge, enhancing switching performance.
  • High voltage rating of 600 V, suitable for high-power applications.
  • High continuous drain current of 74 A, supporting demanding load conditions.
  • MDmesh(TM) II technology for improved thermal and electrical performance.

Applications

The STY80NM60N is designed for high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial and automotive systems requiring high reliability and efficiency.
  • Switch-mode power supplies and inverters.

Q & A

  1. What is the voltage rating of the STY80NM60N?
    The voltage rating of the STY80NM60N is 600 V.
  2. What is the on-resistance of the STY80NM60N?
    The on-resistance (Rds(on)) of the STY80NM60N is 0.030 Ohm.
  3. What is the continuous drain current of the STY80NM60N?
    The continuous drain current (Id) of the STY80NM60N is 74 A at Tc.
  4. What is the power dissipation of the STY80NM60N?
    The power dissipation (Pd) of the STY80NM60N is 447 W at Tc.
  5. What package type does the STY80NM60N use?
    The STY80NM60N uses a Through Hole MAX247 package.
  6. Why is the STY80NM60N significant in power MOSFET technology?
    The STY80NM60N is significant due to its low on-resistance and gate charge, achieved through STMicroelectronics' MDmesh(TM) II technology.
  7. Is the STY80NM60N still in production?
    No, the STY80NM60N is obsolete and no longer manufactured.
  8. What are some common applications for the STY80NM60N?
    Common applications include power supplies, motor control systems, industrial and automotive systems, and switch-mode power supplies.
  9. What are the benefits of using the MDmesh(TM) II technology in the STY80NM60N?
    The MDmesh(TM) II technology provides improved thermal and electrical performance, low on-resistance, and low gate charge.
  10. Where can I find substitutes for the STY80NM60N?
    Substitutes can be found through distributors such as Digi-Key, Mouser, or directly from STMicroelectronics' recommended alternatives.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:74A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:35mOhm @ 37A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:360 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:10100 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):447W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:MAX247™
Package / Case:TO-247-3
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