STTH802D
  • Share:

STMicroelectronics STTH802D

Manufacturer No:
STTH802D
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE GEN PURP 200V 8A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH802D, produced by STMicroelectronics, is an ultrafast recovery diode designed using ST's 200 V planar Pt doping technology. This device is particularly suited for applications in switching mode base drive and transistor circuits. It is available in various packages, including TO-220AC, TO-220FPAC, DPAK, and D²PAK, making it versatile for different design needs.

The STTH802D is intended for use in low voltage, high frequency inverters, freewheeling, and polarity protection circuits. Its advanced technology ensures very low conduction losses, negligible switching losses, and low forward and reverse recovery times, making it an efficient choice for high-performance applications.

Key Specifications

Symbol Parameter Value Unit
IF(AV) Average forward current 8 A
VRRM Repetitive peak reverse voltage 200 V
Tj (max.) Maximum operating junction temperature 175 °C
VF (typ.) Forward voltage drop 0.8 V
trr (typ.) Reverse recovery time 17 ns
IFSM Surge non-repetitive forward current 100 A
Tstg Storage temperature range -65 to +175 °C
Rth(j-c) Junction to case thermal resistance (TO-220AC, DPAK, D²PAK) 3.2 °C/W
Rth(j-c) Junction to case thermal resistance (TO-220FPAC) 5.5 °C/W

Key Features

  • Very low conduction losses: Minimizes energy dissipation during operation.
  • Negligible switching losses: Reduces losses during switching cycles.
  • Low forward and reverse recovery time: Ensures fast switching and minimal delay.
  • High junction temperature: Allows operation at elevated temperatures.
  • ECOPACK®2 compliant component: Meets environmental standards for packaging.
  • Insulated package options: Available in TO-220FPAC with high insulating voltage (2000 VRMS sine).

Applications

  • Low voltage, high frequency inverters: Suitable for inverter applications requiring high efficiency and fast switching.
  • Freewheeling circuits: Ideal for applications where fast recovery times are crucial.
  • Polarity protection circuits: Provides protection against reverse polarity conditions.
  • Switching mode base drive and transistor circuits: Optimized for use in switching mode power supplies and transistor drive circuits.

Q & A

  1. What is the maximum operating junction temperature of the STTH802D?

    The maximum operating junction temperature is 175°C.

  2. What is the repetitive peak reverse voltage (VRRM) of the STTH802D?

    The VRRM is 200 V.

  3. What are the typical forward and reverse recovery times of the STTH802D?

    The typical forward recovery time is not specified, but the typical reverse recovery time is 17 ns.

  4. What are the available package options for the STTH802D?

    The device is available in TO-220AC, TO-220FPAC, DPAK, and D²PAK packages.

  5. Is the STTH802D RoHS compliant?

    Yes, the STTH802D is RoHS compliant and meets ECOPACK®2 standards.

  6. What is the average forward current (IF(AV)) rating of the STTH802D?

    The average forward current rating is 8 A.

  7. What is the surge non-repetitive forward current (IFSM) rating of the STTH802D?

    The surge non-repetitive forward current rating is 100 A for a pulse duration of 10 ms.

  8. What is the storage temperature range for the STTH802D?

    The storage temperature range is -65°C to +175°C.

  9. What are the typical applications of the STTH802D?

    Typical applications include low voltage, high frequency inverters, freewheeling circuits, and polarity protection circuits.

  10. How does the STTH802D minimize energy losses?

    The device minimizes energy losses through very low conduction losses and negligible switching losses.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.05 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:6 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$1.25
417

Please send RFQ , we will respond immediately.

Same Series
STTH802G-TR
STTH802G-TR
DIODE GEN PURP 200V 8A D2PAK
STTH802B-TR
STTH802B-TR
DIODE GEN PURP 200V 8A DPAK
STTH802FP
STTH802FP
DIODE GEN PURP 200V 8A TO220FP
STTH802G
STTH802G
DIODE GEN PURP 200V 8A D2PAK

Similar Products

Part Number STTH802D STTH806D STTH803D STTH812D STTH802G STTH802B
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Obsolete Obsolete
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 600 V 300 V 1200 V 200 V 200 V
Current - Average Rectified (Io) 8A 8A 8A 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.05 V @ 8 A 1.85 V @ 8 A 1.25 V @ 8 A 2.2 V @ 8 A 1.05 V @ 8 A 1.05 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 55 ns 35 ns 100 ns 30 ns 30 ns
Current - Reverse Leakage @ Vr 6 µA @ 200 V 8 µA @ 600 V 20 µA @ 300 V 8 µA @ 1200 V 6 µA @ 200 V 6 µA @ 200 V
Capacitance @ Vr, F - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Surface Mount Surface Mount
Package / Case TO-220-2 TO-220-2 TO-220-2 TO-220-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-220AC TO-220AC TO-220AC TO-220AC D2PAK DPAK
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
SS16FP
SS16FP
onsemi
DIODE SCHOTTKY 60V 1A SOD123HE
STPS5L60SY
STPS5L60SY
STMicroelectronics
DIODE SCHOTTKY 60V 5A SMC
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
NRVBS260NT3G
NRVBS260NT3G
onsemi
DIODE SCHOTTKY 2A 60V 1202 SMB2
PMEG4002EL315
PMEG4002EL315
Nexperia USA Inc.
NOW NEXPERIA PMEG4002EL RECTIFIE
BAT42WS-7
BAT42WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL

Related Product By Brand

SATAULC6-2P6
SATAULC6-2P6
STMicroelectronics
TVS DIODE 5VWM 19VC SOT666
BTA08-600CWRG
BTA08-600CWRG
STMicroelectronics
TRIAC ALTERNISTOR 600V TO220AB
STL225N6F7AG
STL225N6F7AG
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
TDA7439DS13TR
TDA7439DS13TR
STMicroelectronics
IC AUDIO TONE PROCESSOR 28SO
STM32L451RET6
STM32L451RET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 64LQFP
STM32F078VBH6
STM32F078VBH6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 100UFBGA
STM32G474MET6
STM32G474MET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 80LQFP
SPC58EC70E1F0C0X
SPC58EC70E1F0C0X
STMicroelectronics
IC MCU 32BIT 2MB FLASH 64ETQFP
LM2904WHYDT
LM2904WHYDT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8SOIC
L78M15CDT-TR
L78M15CDT-TR
STMicroelectronics
IC REG LINEAR 15V 500MA DPAK
L78L06ACZ-AP
L78L06ACZ-AP
STMicroelectronics
IC REG LINEAR 6V 100MA TO92-3
TDA7708LX32
TDA7708LX32
STMicroelectronics
ADD INFOTAINMENT