STTH802D
  • Share:

STMicroelectronics STTH802D

Manufacturer No:
STTH802D
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE GEN PURP 200V 8A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH802D, produced by STMicroelectronics, is an ultrafast recovery diode designed using ST's 200 V planar Pt doping technology. This device is particularly suited for applications in switching mode base drive and transistor circuits. It is available in various packages, including TO-220AC, TO-220FPAC, DPAK, and D²PAK, making it versatile for different design needs.

The STTH802D is intended for use in low voltage, high frequency inverters, freewheeling, and polarity protection circuits. Its advanced technology ensures very low conduction losses, negligible switching losses, and low forward and reverse recovery times, making it an efficient choice for high-performance applications.

Key Specifications

Symbol Parameter Value Unit
IF(AV) Average forward current 8 A
VRRM Repetitive peak reverse voltage 200 V
Tj (max.) Maximum operating junction temperature 175 °C
VF (typ.) Forward voltage drop 0.8 V
trr (typ.) Reverse recovery time 17 ns
IFSM Surge non-repetitive forward current 100 A
Tstg Storage temperature range -65 to +175 °C
Rth(j-c) Junction to case thermal resistance (TO-220AC, DPAK, D²PAK) 3.2 °C/W
Rth(j-c) Junction to case thermal resistance (TO-220FPAC) 5.5 °C/W

Key Features

  • Very low conduction losses: Minimizes energy dissipation during operation.
  • Negligible switching losses: Reduces losses during switching cycles.
  • Low forward and reverse recovery time: Ensures fast switching and minimal delay.
  • High junction temperature: Allows operation at elevated temperatures.
  • ECOPACK®2 compliant component: Meets environmental standards for packaging.
  • Insulated package options: Available in TO-220FPAC with high insulating voltage (2000 VRMS sine).

Applications

  • Low voltage, high frequency inverters: Suitable for inverter applications requiring high efficiency and fast switching.
  • Freewheeling circuits: Ideal for applications where fast recovery times are crucial.
  • Polarity protection circuits: Provides protection against reverse polarity conditions.
  • Switching mode base drive and transistor circuits: Optimized for use in switching mode power supplies and transistor drive circuits.

Q & A

  1. What is the maximum operating junction temperature of the STTH802D?

    The maximum operating junction temperature is 175°C.

  2. What is the repetitive peak reverse voltage (VRRM) of the STTH802D?

    The VRRM is 200 V.

  3. What are the typical forward and reverse recovery times of the STTH802D?

    The typical forward recovery time is not specified, but the typical reverse recovery time is 17 ns.

  4. What are the available package options for the STTH802D?

    The device is available in TO-220AC, TO-220FPAC, DPAK, and D²PAK packages.

  5. Is the STTH802D RoHS compliant?

    Yes, the STTH802D is RoHS compliant and meets ECOPACK®2 standards.

  6. What is the average forward current (IF(AV)) rating of the STTH802D?

    The average forward current rating is 8 A.

  7. What is the surge non-repetitive forward current (IFSM) rating of the STTH802D?

    The surge non-repetitive forward current rating is 100 A for a pulse duration of 10 ms.

  8. What is the storage temperature range for the STTH802D?

    The storage temperature range is -65°C to +175°C.

  9. What are the typical applications of the STTH802D?

    Typical applications include low voltage, high frequency inverters, freewheeling circuits, and polarity protection circuits.

  10. How does the STTH802D minimize energy losses?

    The device minimizes energy losses through very low conduction losses and negligible switching losses.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.05 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:6 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$1.25
417

Please send RFQ , we will respond immediately.

Same Series
STTH802G-TR
STTH802G-TR
DIODE GEN PURP 200V 8A D2PAK
STTH802B-TR
STTH802B-TR
DIODE GEN PURP 200V 8A DPAK
STTH802FP
STTH802FP
DIODE GEN PURP 200V 8A TO220FP
STTH802G
STTH802G
DIODE GEN PURP 200V 8A D2PAK

Similar Products

Part Number STTH802D STTH806D STTH803D STTH812D STTH802G STTH802B
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Obsolete Obsolete
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 600 V 300 V 1200 V 200 V 200 V
Current - Average Rectified (Io) 8A 8A 8A 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.05 V @ 8 A 1.85 V @ 8 A 1.25 V @ 8 A 2.2 V @ 8 A 1.05 V @ 8 A 1.05 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 55 ns 35 ns 100 ns 30 ns 30 ns
Current - Reverse Leakage @ Vr 6 µA @ 200 V 8 µA @ 600 V 20 µA @ 300 V 8 µA @ 1200 V 6 µA @ 200 V 6 µA @ 200 V
Capacitance @ Vr, F - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Surface Mount Surface Mount
Package / Case TO-220-2 TO-220-2 TO-220-2 TO-220-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-220AC TO-220AC TO-220AC TO-220AC D2PAK DPAK
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

BAT46W-HE3-08
BAT46W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 150MA SOD123
BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
STPS1L60ZF
STPS1L60ZF
STMicroelectronics
DIODE SCHOTTKY 60V 1A SOD123F
S110FA
S110FA
onsemi
DIODE SCHOTTKY 100V 1A SOD123FA
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
1N5711UR-1E3
1N5711UR-1E3
Microchip Technology
SCHOTTKY BARRIER DIODE MELF SURF
1N5711UBD
1N5711UBD
Microchip Technology
SCHOTTKY BARRIER DIODE CERAMIC S
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
MBR0530T3
MBR0530T3
onsemi
DIODE SCHOTTKY 30V 500MA SOD123

Related Product By Brand

ESDA6V1-5SC6Y
ESDA6V1-5SC6Y
STMicroelectronics
TVS DIODE 5.2VWM 11.4VC SOT23-6
SM6T12CA
SM6T12CA
STMicroelectronics
TVS DIODE 10.2VWM 21.7VC SMB
STGP30H60DFB
STGP30H60DFB
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
STM32L151VCH6
STM32L151VCH6
STMicroelectronics
IC MCU 32BIT 256KB FLSH 100UFBGA
STM32L433VCT3
STM32L433VCT3
STMicroelectronics
IC MCU 32BIT 256KB FLASH 100LQFP
STM32F215ZET6TR
STM32F215ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
TDA7564B
TDA7564B
STMicroelectronics
IC AMP AB QUAD 75W 25FLEXIWATT
TS881ILT
TS881ILT
STMicroelectronics
IC COMPARATOR R-R 1.1V SOT-23-5
M24512-DRDW3TP/K
M24512-DRDW3TP/K
STMicroelectronics
IC EEPROM 512KBIT I2C 8TSSOP
VNQ5050AKTR-E
VNQ5050AKTR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
L9779WDM
L9779WDM
STMicroelectronics
HI-QUAD 64 14X14 POW
TDA7708LTR
TDA7708LTR
STMicroelectronics
ADD INFOTAINMENT