STTH802D
  • Share:

STMicroelectronics STTH802D

Manufacturer No:
STTH802D
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE GEN PURP 200V 8A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH802D, produced by STMicroelectronics, is an ultrafast recovery diode designed using ST's 200 V planar Pt doping technology. This device is particularly suited for applications in switching mode base drive and transistor circuits. It is available in various packages, including TO-220AC, TO-220FPAC, DPAK, and D²PAK, making it versatile for different design needs.

The STTH802D is intended for use in low voltage, high frequency inverters, freewheeling, and polarity protection circuits. Its advanced technology ensures very low conduction losses, negligible switching losses, and low forward and reverse recovery times, making it an efficient choice for high-performance applications.

Key Specifications

Symbol Parameter Value Unit
IF(AV) Average forward current 8 A
VRRM Repetitive peak reverse voltage 200 V
Tj (max.) Maximum operating junction temperature 175 °C
VF (typ.) Forward voltage drop 0.8 V
trr (typ.) Reverse recovery time 17 ns
IFSM Surge non-repetitive forward current 100 A
Tstg Storage temperature range -65 to +175 °C
Rth(j-c) Junction to case thermal resistance (TO-220AC, DPAK, D²PAK) 3.2 °C/W
Rth(j-c) Junction to case thermal resistance (TO-220FPAC) 5.5 °C/W

Key Features

  • Very low conduction losses: Minimizes energy dissipation during operation.
  • Negligible switching losses: Reduces losses during switching cycles.
  • Low forward and reverse recovery time: Ensures fast switching and minimal delay.
  • High junction temperature: Allows operation at elevated temperatures.
  • ECOPACK®2 compliant component: Meets environmental standards for packaging.
  • Insulated package options: Available in TO-220FPAC with high insulating voltage (2000 VRMS sine).

Applications

  • Low voltage, high frequency inverters: Suitable for inverter applications requiring high efficiency and fast switching.
  • Freewheeling circuits: Ideal for applications where fast recovery times are crucial.
  • Polarity protection circuits: Provides protection against reverse polarity conditions.
  • Switching mode base drive and transistor circuits: Optimized for use in switching mode power supplies and transistor drive circuits.

Q & A

  1. What is the maximum operating junction temperature of the STTH802D?

    The maximum operating junction temperature is 175°C.

  2. What is the repetitive peak reverse voltage (VRRM) of the STTH802D?

    The VRRM is 200 V.

  3. What are the typical forward and reverse recovery times of the STTH802D?

    The typical forward recovery time is not specified, but the typical reverse recovery time is 17 ns.

  4. What are the available package options for the STTH802D?

    The device is available in TO-220AC, TO-220FPAC, DPAK, and D²PAK packages.

  5. Is the STTH802D RoHS compliant?

    Yes, the STTH802D is RoHS compliant and meets ECOPACK®2 standards.

  6. What is the average forward current (IF(AV)) rating of the STTH802D?

    The average forward current rating is 8 A.

  7. What is the surge non-repetitive forward current (IFSM) rating of the STTH802D?

    The surge non-repetitive forward current rating is 100 A for a pulse duration of 10 ms.

  8. What is the storage temperature range for the STTH802D?

    The storage temperature range is -65°C to +175°C.

  9. What are the typical applications of the STTH802D?

    Typical applications include low voltage, high frequency inverters, freewheeling circuits, and polarity protection circuits.

  10. How does the STTH802D minimize energy losses?

    The device minimizes energy losses through very low conduction losses and negligible switching losses.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.05 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:6 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$1.25
417

Please send RFQ , we will respond immediately.

Same Series
STTH802B-TR
STTH802B-TR
DIODE GEN PURP 200V 8A DPAK
STTH802D
STTH802D
DIODE GEN PURP 200V 8A TO220AC
STTH802FP
STTH802FP
DIODE GEN PURP 200V 8A TO220FP
STTH802G
STTH802G
DIODE GEN PURP 200V 8A D2PAK

Similar Products

Part Number STTH802D STTH806D STTH803D STTH812D STTH802G STTH802B
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Obsolete Obsolete
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 600 V 300 V 1200 V 200 V 200 V
Current - Average Rectified (Io) 8A 8A 8A 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.05 V @ 8 A 1.85 V @ 8 A 1.25 V @ 8 A 2.2 V @ 8 A 1.05 V @ 8 A 1.05 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 55 ns 35 ns 100 ns 30 ns 30 ns
Current - Reverse Leakage @ Vr 6 µA @ 200 V 8 µA @ 600 V 20 µA @ 300 V 8 µA @ 1200 V 6 µA @ 200 V 6 µA @ 200 V
Capacitance @ Vr, F - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Surface Mount Surface Mount
Package / Case TO-220-2 TO-220-2 TO-220-2 TO-220-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-220AC TO-220AC TO-220AC TO-220AC D2PAK DPAK
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
BAS521-7
BAS521-7
Diodes Incorporated
DIODE GEN PURP 300V 250MA SOD523
PMEG2020EH,115
PMEG2020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A SOD123F
STTH1R06A
STTH1R06A
STMicroelectronics
DIODE GEN PURP 600V 1A SMA
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
BAV199/ZL215
BAV199/ZL215
Nexperia USA Inc.
BAV199W - RECTIFIER DIODE
1N4148WHE3-TP
1N4148WHE3-TP
Micro Commercial Co
400MW SWITCHING DIODES SOD-123
BAS21Q-7-F
BAS21Q-7-F
Diodes Incorporated
DIODE GP SW SOT23
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
SS16HE3/61T
SS16HE3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO214AC
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23

Related Product By Brand

BTB16-800BWRG
BTB16-800BWRG
STMicroelectronics
TRIAC ALTERNISTOR 800V TO220AB
M41T83SQA6F
M41T83SQA6F
STMicroelectronics
IC RTC CLK/CALENDAR I2C 16-QFN
ST7FLITE09Y0B6
ST7FLITE09Y0B6
STMicroelectronics
IC MCU 8BIT 1.5KB FLASH 16DIP
SPC58EC70E1F0C0X
SPC58EC70E1F0C0X
STMicroelectronics
IC MCU 32BIT 2MB FLASH 64ETQFP
TSC2012IDT
TSC2012IDT
STMicroelectronics
IC CURRENT SENSE 1 CIRCUIT 8SOIC
74LCX573MTR
74LCX573MTR
STMicroelectronics
IC LATCH OCTAL D-TYPE 20-SOIC
M24512-DRDW3TP/K
M24512-DRDW3TP/K
STMicroelectronics
IC EEPROM 512KBIT I2C 8TSSOP
ST1S10PHR
ST1S10PHR
STMicroelectronics
IC REG BUCK ADJ 3A POWERSO-8
LNBH23LQTR
LNBH23LQTR
STMicroelectronics
IC REG CONV SAT TV 1OUT 32QFN
LIS302DL
LIS302DL
STMicroelectronics
ACCEL 2.3-9.2G I2C/SPI 14LGA
AIS326DQ
AIS326DQ
STMicroelectronics
ACCEL 2-6G I2C/SPI 28QFPN
ISM330DHCXTR
ISM330DHCXTR
STMicroelectronics
INEMO INERTIAL MODULE: ALWAYS-ON