STTH802D
  • Share:

STMicroelectronics STTH802D

Manufacturer No:
STTH802D
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE GEN PURP 200V 8A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH802D, produced by STMicroelectronics, is an ultrafast recovery diode designed using ST's 200 V planar Pt doping technology. This device is particularly suited for applications in switching mode base drive and transistor circuits. It is available in various packages, including TO-220AC, TO-220FPAC, DPAK, and D²PAK, making it versatile for different design needs.

The STTH802D is intended for use in low voltage, high frequency inverters, freewheeling, and polarity protection circuits. Its advanced technology ensures very low conduction losses, negligible switching losses, and low forward and reverse recovery times, making it an efficient choice for high-performance applications.

Key Specifications

Symbol Parameter Value Unit
IF(AV) Average forward current 8 A
VRRM Repetitive peak reverse voltage 200 V
Tj (max.) Maximum operating junction temperature 175 °C
VF (typ.) Forward voltage drop 0.8 V
trr (typ.) Reverse recovery time 17 ns
IFSM Surge non-repetitive forward current 100 A
Tstg Storage temperature range -65 to +175 °C
Rth(j-c) Junction to case thermal resistance (TO-220AC, DPAK, D²PAK) 3.2 °C/W
Rth(j-c) Junction to case thermal resistance (TO-220FPAC) 5.5 °C/W

Key Features

  • Very low conduction losses: Minimizes energy dissipation during operation.
  • Negligible switching losses: Reduces losses during switching cycles.
  • Low forward and reverse recovery time: Ensures fast switching and minimal delay.
  • High junction temperature: Allows operation at elevated temperatures.
  • ECOPACK®2 compliant component: Meets environmental standards for packaging.
  • Insulated package options: Available in TO-220FPAC with high insulating voltage (2000 VRMS sine).

Applications

  • Low voltage, high frequency inverters: Suitable for inverter applications requiring high efficiency and fast switching.
  • Freewheeling circuits: Ideal for applications where fast recovery times are crucial.
  • Polarity protection circuits: Provides protection against reverse polarity conditions.
  • Switching mode base drive and transistor circuits: Optimized for use in switching mode power supplies and transistor drive circuits.

Q & A

  1. What is the maximum operating junction temperature of the STTH802D?

    The maximum operating junction temperature is 175°C.

  2. What is the repetitive peak reverse voltage (VRRM) of the STTH802D?

    The VRRM is 200 V.

  3. What are the typical forward and reverse recovery times of the STTH802D?

    The typical forward recovery time is not specified, but the typical reverse recovery time is 17 ns.

  4. What are the available package options for the STTH802D?

    The device is available in TO-220AC, TO-220FPAC, DPAK, and D²PAK packages.

  5. Is the STTH802D RoHS compliant?

    Yes, the STTH802D is RoHS compliant and meets ECOPACK®2 standards.

  6. What is the average forward current (IF(AV)) rating of the STTH802D?

    The average forward current rating is 8 A.

  7. What is the surge non-repetitive forward current (IFSM) rating of the STTH802D?

    The surge non-repetitive forward current rating is 100 A for a pulse duration of 10 ms.

  8. What is the storage temperature range for the STTH802D?

    The storage temperature range is -65°C to +175°C.

  9. What are the typical applications of the STTH802D?

    Typical applications include low voltage, high frequency inverters, freewheeling circuits, and polarity protection circuits.

  10. How does the STTH802D minimize energy losses?

    The device minimizes energy losses through very low conduction losses and negligible switching losses.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.05 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:6 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$1.25
417

Please send RFQ , we will respond immediately.

Same Series
STTH802G-TR
STTH802G-TR
DIODE GEN PURP 200V 8A D2PAK
STTH802B-TR
STTH802B-TR
DIODE GEN PURP 200V 8A DPAK
STTH802FP
STTH802FP
DIODE GEN PURP 200V 8A TO220FP
STTH802G
STTH802G
DIODE GEN PURP 200V 8A D2PAK

Similar Products

Part Number STTH802D STTH806D STTH803D STTH812D STTH802G STTH802B
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Obsolete Obsolete
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 600 V 300 V 1200 V 200 V 200 V
Current - Average Rectified (Io) 8A 8A 8A 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.05 V @ 8 A 1.85 V @ 8 A 1.25 V @ 8 A 2.2 V @ 8 A 1.05 V @ 8 A 1.05 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 55 ns 35 ns 100 ns 30 ns 30 ns
Current - Reverse Leakage @ Vr 6 µA @ 200 V 8 µA @ 600 V 20 µA @ 300 V 8 µA @ 1200 V 6 µA @ 200 V 6 µA @ 200 V
Capacitance @ Vr, F - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Surface Mount Surface Mount
Package / Case TO-220-2 TO-220-2 TO-220-2 TO-220-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-220AC TO-220AC TO-220AC TO-220AC D2PAK DPAK
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

1N4148WSF-7
1N4148WSF-7
Diodes Incorporated
DIODE GEN PURP 100V 250MA SOD323
NSVBAS21AHT1G
NSVBAS21AHT1G
onsemi
DIODE GEN PURP 250V 200MA SOD323
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
STTH512D
STTH512D
STMicroelectronics
DIODE GEN PURP 1.2KV 5A TO220AC
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
BAT54-D87Z
BAT54-D87Z
onsemi
30V SOT23 SCHOTTKY DIODE
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
SS16HE3/61T
SS16HE3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO214AC
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
SBRS8130LT3G-IR02
SBRS8130LT3G-IR02
onsemi
DIODE SCHOTTKY

Related Product By Brand

STPS0560Z
STPS0560Z
STMicroelectronics
DIODE SCHOTTKY 60V 500MA SOD123
MJD31CT4-A
MJD31CT4-A
STMicroelectronics
TRANS NPN 100V 3A DPAK
BD678A
BD678A
STMicroelectronics
TRANS PNP DARL 60V 4A SOT32-3
STP24N60M2
STP24N60M2
STMicroelectronics
MOSFET N-CH 600V 18A TO220
TDA7498LTR
TDA7498LTR
STMicroelectronics
IC AMP D STEREO 80W POWERSSO36
M24C32-RMN6TP
M24C32-RMN6TP
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
M48Z02-70PC1
M48Z02-70PC1
STMicroelectronics
IC NVSRAM 16KBIT PAR 24PCDIP
VIPER122LSTR
VIPER122LSTR
STMicroelectronics
IC OFFLINE SW MULT TOP 10SSOP
L6201PS
L6201PS
STMicroelectronics
IC MOTOR DRIVER PAR 20POWERSO
VNQ810PTR-E
VNQ810PTR-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 28SO
VNP35N07FI
VNP35N07FI
STMicroelectronics
IC PWR DRVR N-CH 1:1 ISOWATT220
VND7140AJ12TR-E
VND7140AJ12TR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO12