STTH802B
  • Share:

STMicroelectronics STTH802B

Manufacturer No:
STTH802B
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE GEN PURP 200V 8A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH802B, produced by STMicroelectronics, is an ultrafast recovery diode designed using ST's 200 V planar Pt doping technology. This device is particularly suited for switching mode base drive and transistor circuits, making it ideal for applications requiring low conduction losses and high switching speeds.

Key Specifications

ParameterValue
Type of diodeRectifying
MountingSMD
Max. off-state voltage (Vr)200 V
Load current (Io)8 A
Reverse recovery time (trr)17 ns
Max. forward voltage (Vf) @ If1.05 V @ 8 A
Max. forward impulse current (Ifsm)100 A
CaseDPAK
Junction Temperature (Tj) max175 °C
Operating Temperature (Tamb) range-40 °C to 150 °C

Key Features

  • Very low conduction losses
  • Low forward and reverse recovery time
  • Negligible switching losses
  • High junction temperature capability
  • Ultrafast switching

Applications

The STTH802B is intended for use in various applications, including low voltage, high frequency inverters, free-wheeling diodes, and polarity protection circuits. Its ultrafast recovery characteristics make it suitable for switching mode base drive and transistor circuits.

Q & A

  1. What is the maximum off-state voltage of the STTH802B?
    The maximum off-state voltage (Vr) of the STTH802B is 200 V.
  2. What is the load current rating of the STTH802B?
    The load current (Io) rating of the STTH802B is 8 A.
  3. What is the reverse recovery time of the STTH802B?
    The reverse recovery time (trr) of the STTH802B is 17 ns.
  4. What is the maximum forward voltage of the STTH802B at 8 A?
    The maximum forward voltage (Vf) at 8 A is 1.05 V.
  5. What is the maximum forward impulse current of the STTH802B?
    The maximum forward impulse current (Ifsm) is 100 A.
  6. What are the available packages for the STTH802B?
    The STTH802B is available in DPAK, TO-220AC, TO-220FPAC, and D2PAK packages.
  7. What is the junction temperature range of the STTH802B?
    The junction temperature (Tj) range of the STTH802B is up to 175 °C.
  8. Is the STTH802B RoHS compliant?
    Yes, the STTH802B is RoHS compliant with an Ecopack2 grade.
  9. What are the typical applications of the STTH802B?
    The STTH802B is typically used in low voltage, high frequency inverters, free-wheeling diodes, and polarity protection circuits.
  10. Where can I find EDA symbols, footprints, and 3D models for the STTH802B?
    You can find EDA symbols, footprints, and 3D models for the STTH802B on the STMicroelectronics website.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.05 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:6 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

-
350

Please send RFQ , we will respond immediately.

Same Series
APH-BNCJ-HDBNCJ
APH-BNCJ-HDBNCJ
CONN ADAPT BNC HD JACK-BNC JACK

Similar Products

Part Number STTH802B STTH802D STTH802G
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Obsolete
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V
Current - Average Rectified (Io) 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.05 V @ 8 A 1.05 V @ 8 A 1.05 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 30 ns 30 ns
Current - Reverse Leakage @ Vr 6 µA @ 200 V 6 µA @ 200 V 6 µA @ 200 V
Capacitance @ Vr, F - - -
Mounting Type Surface Mount Through Hole Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package DPAK TO-220AC D2PAK
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
PMEG2010AEBF
PMEG2010AEBF
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD523
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
MBR1100RLG
MBR1100RLG
onsemi
DIODE SCHOTTKY 100V 1A AXIAL
NRVBS360T3G
NRVBS360T3G
onsemi
DIODE SCHOTTKY 60V 3A SMC
STTH512D
STTH512D
STMicroelectronics
DIODE GEN PURP 1.2KV 5A TO220AC
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
NSVBAS16W1T1G
NSVBAS16W1T1G
onsemi
SS SC88 SWITCHING DIODE
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

SM6T24CAY
SM6T24CAY
STMicroelectronics
TVS DIODE 20.5VWM 42.8VC SMB
BAT54JFILM
BAT54JFILM
STMicroelectronics
DIODE SCHOTTKY 40V 300MA SOD323
SCTWA90N65G2V
SCTWA90N65G2V
STMicroelectronics
SILICON CARBIDE POWER MOSFET 650
STH15NB50FI
STH15NB50FI
STMicroelectronics
MOSFET N-CH 500V 10.5A ISOWAT218
STM32L496ZGT3
STM32L496ZGT3
STMicroelectronics
IC MCU 32BIT 1MB FLASH 144LQFP
STM32L475VGT6
STM32L475VGT6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
M24C04-WMN6
M24C04-WMN6
STMicroelectronics
IC EEPROM 4KBIT I2C 400KHZ 8SO
M27C4001-12F6
M27C4001-12F6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 32CDIP
L6375S
L6375S
STMicroelectronics
IC PWR SWITCH N-CHAN 1:1 8SOIC
L6375D013TR
L6375D013TR
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 20SOIC
VB325SP13TR
VB325SP13TR
STMicroelectronics
IC PWR DRVR BIPOLAR 1:1 PWRSO10
LD39130SJ18R
LD39130SJ18R
STMicroelectronics
IC REG LIN 1.8V 300MA 4FLIPCHIP