STTH802B
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STMicroelectronics STTH802B

Manufacturer No:
STTH802B
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE GEN PURP 200V 8A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH802B, produced by STMicroelectronics, is an ultrafast recovery diode designed using ST's 200 V planar Pt doping technology. This device is particularly suited for switching mode base drive and transistor circuits, making it ideal for applications requiring low conduction losses and high switching speeds.

Key Specifications

ParameterValue
Type of diodeRectifying
MountingSMD
Max. off-state voltage (Vr)200 V
Load current (Io)8 A
Reverse recovery time (trr)17 ns
Max. forward voltage (Vf) @ If1.05 V @ 8 A
Max. forward impulse current (Ifsm)100 A
CaseDPAK
Junction Temperature (Tj) max175 °C
Operating Temperature (Tamb) range-40 °C to 150 °C

Key Features

  • Very low conduction losses
  • Low forward and reverse recovery time
  • Negligible switching losses
  • High junction temperature capability
  • Ultrafast switching

Applications

The STTH802B is intended for use in various applications, including low voltage, high frequency inverters, free-wheeling diodes, and polarity protection circuits. Its ultrafast recovery characteristics make it suitable for switching mode base drive and transistor circuits.

Q & A

  1. What is the maximum off-state voltage of the STTH802B?
    The maximum off-state voltage (Vr) of the STTH802B is 200 V.
  2. What is the load current rating of the STTH802B?
    The load current (Io) rating of the STTH802B is 8 A.
  3. What is the reverse recovery time of the STTH802B?
    The reverse recovery time (trr) of the STTH802B is 17 ns.
  4. What is the maximum forward voltage of the STTH802B at 8 A?
    The maximum forward voltage (Vf) at 8 A is 1.05 V.
  5. What is the maximum forward impulse current of the STTH802B?
    The maximum forward impulse current (Ifsm) is 100 A.
  6. What are the available packages for the STTH802B?
    The STTH802B is available in DPAK, TO-220AC, TO-220FPAC, and D2PAK packages.
  7. What is the junction temperature range of the STTH802B?
    The junction temperature (Tj) range of the STTH802B is up to 175 °C.
  8. Is the STTH802B RoHS compliant?
    Yes, the STTH802B is RoHS compliant with an Ecopack2 grade.
  9. What are the typical applications of the STTH802B?
    The STTH802B is typically used in low voltage, high frequency inverters, free-wheeling diodes, and polarity protection circuits.
  10. Where can I find EDA symbols, footprints, and 3D models for the STTH802B?
    You can find EDA symbols, footprints, and 3D models for the STTH802B on the STMicroelectronics website.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.05 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:6 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
Operating Temperature - Junction:175°C (Max)
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Similar Products

Part Number STTH802B STTH802D STTH802G
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Obsolete
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V
Current - Average Rectified (Io) 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.05 V @ 8 A 1.05 V @ 8 A 1.05 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 30 ns 30 ns
Current - Reverse Leakage @ Vr 6 µA @ 200 V 6 µA @ 200 V 6 µA @ 200 V
Capacitance @ Vr, F - - -
Mounting Type Surface Mount Through Hole Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package DPAK TO-220AC D2PAK
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max)

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