STTH802B
  • Share:

STMicroelectronics STTH802B

Manufacturer No:
STTH802B
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE GEN PURP 200V 8A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH802B, produced by STMicroelectronics, is an ultrafast recovery diode designed using ST's 200 V planar Pt doping technology. This device is particularly suited for switching mode base drive and transistor circuits, making it ideal for applications requiring low conduction losses and high switching speeds.

Key Specifications

ParameterValue
Type of diodeRectifying
MountingSMD
Max. off-state voltage (Vr)200 V
Load current (Io)8 A
Reverse recovery time (trr)17 ns
Max. forward voltage (Vf) @ If1.05 V @ 8 A
Max. forward impulse current (Ifsm)100 A
CaseDPAK
Junction Temperature (Tj) max175 °C
Operating Temperature (Tamb) range-40 °C to 150 °C

Key Features

  • Very low conduction losses
  • Low forward and reverse recovery time
  • Negligible switching losses
  • High junction temperature capability
  • Ultrafast switching

Applications

The STTH802B is intended for use in various applications, including low voltage, high frequency inverters, free-wheeling diodes, and polarity protection circuits. Its ultrafast recovery characteristics make it suitable for switching mode base drive and transistor circuits.

Q & A

  1. What is the maximum off-state voltage of the STTH802B?
    The maximum off-state voltage (Vr) of the STTH802B is 200 V.
  2. What is the load current rating of the STTH802B?
    The load current (Io) rating of the STTH802B is 8 A.
  3. What is the reverse recovery time of the STTH802B?
    The reverse recovery time (trr) of the STTH802B is 17 ns.
  4. What is the maximum forward voltage of the STTH802B at 8 A?
    The maximum forward voltage (Vf) at 8 A is 1.05 V.
  5. What is the maximum forward impulse current of the STTH802B?
    The maximum forward impulse current (Ifsm) is 100 A.
  6. What are the available packages for the STTH802B?
    The STTH802B is available in DPAK, TO-220AC, TO-220FPAC, and D2PAK packages.
  7. What is the junction temperature range of the STTH802B?
    The junction temperature (Tj) range of the STTH802B is up to 175 °C.
  8. Is the STTH802B RoHS compliant?
    Yes, the STTH802B is RoHS compliant with an Ecopack2 grade.
  9. What are the typical applications of the STTH802B?
    The STTH802B is typically used in low voltage, high frequency inverters, free-wheeling diodes, and polarity protection circuits.
  10. Where can I find EDA symbols, footprints, and 3D models for the STTH802B?
    You can find EDA symbols, footprints, and 3D models for the STTH802B on the STMicroelectronics website.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.05 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:6 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

-
350

Please send RFQ , we will respond immediately.

Same Series
APH-BNCJ-HDBNCJ
APH-BNCJ-HDBNCJ
CONN ADAPT BNC HD JACK-BNC JACK

Similar Products

Part Number STTH802B STTH802D STTH802G
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Obsolete
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V
Current - Average Rectified (Io) 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.05 V @ 8 A 1.05 V @ 8 A 1.05 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 30 ns 30 ns
Current - Reverse Leakage @ Vr 6 µA @ 200 V 6 µA @ 200 V 6 µA @ 200 V
Capacitance @ Vr, F - - -
Mounting Type Surface Mount Through Hole Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package DPAK TO-220AC D2PAK
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
BAS16WS-HE3-18
BAS16WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
BAS16_L99Z
BAS16_L99Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3
SBRS8130LT3G-IR02
SBRS8130LT3G-IR02
onsemi
DIODE SCHOTTKY

Related Product By Brand

STGIPQ3H60T-HZS
STGIPQ3H60T-HZS
STMicroelectronics
PWR MODULE 600V 3A 26DIP
STL76DN4LF7AG
STL76DN4LF7AG
STMicroelectronics
MOSFET 2N-CH 40V 40A PWRFLAT
STF13N60M2
STF13N60M2
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
STM32F745VGH6
STM32F745VGH6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100TFBGA
STM32F427VGT7
STM32F427VGT7
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
TDA7564B
TDA7564B
STMicroelectronics
IC AMP AB QUAD 75W 25FLEXIWATT
E-TDA7560A
E-TDA7560A
STMicroelectronics
IC AMP AB QUAD 80W 27FLEXIWATT
TSZ124IYPT
TSZ124IYPT
STMicroelectronics
IC OPAMP ZER-DRIFT 4CIRC 14TSSOP
TS274AIPT
TS274AIPT
STMicroelectronics
IC CMOS 4 CIRCUIT 14TSSOP
DSM2190F4V-15T6
DSM2190F4V-15T6
STMicroelectronics
IC FLASH 2MBIT PARALLEL 52PQFP
L4995KTR
L4995KTR
STMicroelectronics
IC REG LIN 5V 500MA POWERSSO-24
BALF-SPI-02D3
BALF-SPI-02D3
STMicroelectronics
BALUN 434MHZ 6WFBGA FCBGA