STTH802G
  • Share:

STMicroelectronics STTH802G

Manufacturer No:
STTH802G
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE GEN PURP 200V 8A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH802G, produced by STMicroelectronics, is an ultrafast recovery diode designed for high-performance applications. This device utilizes ST's 200 V planar Pt doping technology, making it particularly suited for switching mode base drive and transistor circuits. It is available in various packages including TO-220AC, TO-220FPAC, DPAK, and D²PAK, ensuring versatility in different design requirements. The STTH802G is known for its low conduction losses, negligible switching losses, and low forward and reverse recovery times, making it an ideal choice for high-frequency inverter, freewheeling, and polarity protection applications.

Key Specifications

Parameter Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM 200 V
Average Forward Current IF(AV) 8 A
Forward RMS Current IF(RMS) 16 A
Surge Non-Repetitive Forward Current IFSM 100 A
Maximum Operating Junction Temperature Tj 175 °C
Forward Voltage Drop VF 0.8 - 1.05 V
Reverse Recovery Time trr 17 - 30 ns
Junction to Case Thermal Resistance Rth(j-c) 3.2 - 5.5 °C/W

Key Features

  • Very low conduction losses
  • Negligible switching losses
  • Low forward and reverse recovery time
  • High junction temperature (up to 175 °C)
  • ECOPACK®2 compliant component for DPAK and D²PAK packages
  • Insulated package: TO-220FPAC with insulating voltage of 2000 VRMS sine
  • Cooling method by conduction
  • Epoxy meets UL 94, V0

Applications

The STTH802G is intended for use in various high-performance applications, including:

  • Low voltage, high frequency inverters
  • Freewheeling diodes
  • Polarity protection circuits
  • Switching mode base drive and transistor circuits

Q & A

  1. What is the maximum repetitive peak reverse voltage of the STTH802G?

    The maximum repetitive peak reverse voltage (VRRM) is 200 V.

  2. What is the average forward current rating of the STTH802G?

    The average forward current (IF(AV)) is 8 A.

  3. What are the typical forward voltage drop and reverse recovery time of the STTH802G?

    The typical forward voltage drop (VF) is 0.8 V, and the typical reverse recovery time (trr) is 17 ns.

  4. What is the maximum operating junction temperature of the STTH802G?

    The maximum operating junction temperature (Tj) is 175 °C.

  5. What packages are available for the STTH802G?

    The STTH802G is available in TO-220AC, TO-220FPAC, DPAK, and D²PAK packages.

  6. Is the STTH802G RoHS compliant?
  7. What is the surge non-repetitive forward current rating of the STTH802G?

    The surge non-repetitive forward current (IFSM) is 100 A for a pulse duration of 10 ms sinusoidal.

  8. What is the junction to case thermal resistance of the STTH802G?

    The junction to case thermal resistance (Rth(j-c)) ranges from 3.2 to 5.5 °C/W depending on the package.

  9. What are the typical applications of the STTH802G?

    The STTH802G is typically used in low voltage, high frequency inverters, freewheeling diodes, polarity protection circuits, and switching mode base drive and transistor circuits.

  10. Does the STTH802G meet environmental compliance standards?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.05 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:6 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.96
423

Please send RFQ , we will respond immediately.

Same Series
STTH802G-TR
STTH802G-TR
DIODE GEN PURP 200V 8A D2PAK
STTH802B-TR
STTH802B-TR
DIODE GEN PURP 200V 8A DPAK
STTH802FP
STTH802FP
DIODE GEN PURP 200V 8A TO220FP
STTH802G
STTH802G
DIODE GEN PURP 200V 8A D2PAK

Similar Products

Part Number STTH802G STTH806G STTH812G STTH802B STTH802D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 600 V 1200 V 200 V 200 V
Current - Average Rectified (Io) 8A 8A 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.05 V @ 8 A 1.85 V @ 8 A 2.2 V @ 8 A 1.05 V @ 8 A 1.05 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 55 ns 100 ns 30 ns 30 ns
Current - Reverse Leakage @ Vr 6 µA @ 200 V 8 µA @ 600 V 8 µA @ 1200 V 6 µA @ 200 V 6 µA @ 200 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Through Hole
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-2
Supplier Device Package D2PAK D2PAK D2PAK DPAK TO-220AC
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
STPS160AFN
STPS160AFN
STMicroelectronics
60 V, 1 A POWER SCHOTTKY RECTIFI
MBR120LSFT3G
MBR120LSFT3G
onsemi
DIODE SCHOTTKY 20V 1A SOD123L
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
SS16HE3/61T
SS16HE3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO214AC
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
BAT54-7-G
BAT54-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

T405Q-600H
T405Q-600H
STMicroelectronics
TRIAC SENS GATE 600V 4A IPAK
BD438
BD438
STMicroelectronics
TRANS PNP 45V 4A SOT32-3
BD678A
BD678A
STMicroelectronics
TRANS PNP DARL 60V 4A SOT32-3
STW18NM60ND
STW18NM60ND
STMicroelectronics
MOSFET N-CH 600V 13A TO247
TDA7418
TDA7418
STMicroelectronics
IC AUDIO SIGNAL PROCESSOR 20SO
STM32F427VGT6TR
STM32F427VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM8AF6286TCY
STM8AF6286TCY
STMicroelectronics
IC MCU 8BIT 64KB FLASH 32LQFP
STM32F401CCY6TR
STM32F401CCY6TR
STMicroelectronics
IC MCU 32BIT 256KB FLASH 49WLCSP
M24C04-FMC5TG
M24C04-FMC5TG
STMicroelectronics
IC EEPROM 4KBIT I2C 8UFDFPN
L9779WDM
L9779WDM
STMicroelectronics
HI-QUAD 64 14X14 POW
LD1117AS25TR
LD1117AS25TR
STMicroelectronics
IC REG LINEAR 2.5V 1A SOT223
PM8908TR
PM8908TR
STMicroelectronics
IC REG CONV DDR 1OUT 20QFN