STTH812D
  • Share:

STMicroelectronics STTH812D

Manufacturer No:
STTH812D
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE GEN PURP 1.2KV 8A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH812D, produced by STMicroelectronics, is an ultrafast recovery diode designed for high-performance applications. This diode features low leakage current, regularly reproducible characteristics, and intrinsic ruggedness, making it ideal for heavy-duty applications that demand long-term reliability. The STTH812D is available in various packages, including TO-220AC, TO-220Ins, TO-220FPAC, and D2PAK, each with specific electrical insulation and thermal characteristics.

Key Specifications

Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 1200 V
IF(RMS) RMS forward current (TO-220AC / D2PAK / TO-220FPAC) 30 A
IF(AV) Average forward current (TO-220AC / D2PAK, Tc = 140°C) 8 A
IFRM Repetitive peak forward current (tp = 5 µs, F = 5 kHz square) 100 A
IFSM Surge non-repetitive forward current (tp = 10 ms Sinusoidal) 80 A
Tstg Storage temperature range -65 to +175 °C
Tj Maximum operating junction temperature 175 °C
VF (typ) Forward voltage drop (Tj = 25°C, IF = 8 A) 1.25 V
trr (typ) Reverse recovery time (IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25°C) 50 ns ns
Rth(j-c) Junction to case thermal resistance (TO-220AC / D2PAK) 1.9 °C/W

Key Features

  • Ultrafast, soft recovery characteristics
  • Very low conduction and switching losses
  • High frequency and/or high pulsed current operation
  • High reverse voltage capability (1200 V)
  • High junction temperature (175°C)
  • Insulated packages with electrical insulation up to 2500 VRMS
  • Low leakage current and improved thermal runaway guard band

Applications

The STTH812D is suitable for various demanding applications, including:

  • Industrial power supplies
  • Motor control systems
  • Rectification and freewheeling in mission-critical systems
  • Auxiliary functions such as snubber, bootstrap, and demagnetization applications

Q & A

  1. What is the repetitive peak reverse voltage of the STTH812D?

    The repetitive peak reverse voltage (VRRM) is 1200 V.

  2. What is the maximum operating junction temperature of the STTH812D?

    The maximum operating junction temperature (Tj) is 175°C.

  3. What are the typical forward voltage drop and reverse recovery time of the STTH812D?

    The typical forward voltage drop (VF) is 1.25 V at 25°C with IF = 8 A, and the typical reverse recovery time (trr) is 50 ns.

  4. What are the different packages available for the STTH812D?

    The STTH812D is available in TO-220AC, TO-220Ins, TO-220FPAC, and D2PAK packages.

  5. What is the RMS forward current rating for the TO-220AC package?

    The RMS forward current (IF(RMS)) for the TO-220AC package is 30 A.

  6. What is the surge non-repetitive forward current rating of the STTH812D?

    The surge non-repetitive forward current (IFSM) is 80 A for tp = 10 ms Sinusoidal.

  7. What is the junction to case thermal resistance for the TO-220AC package?

    The junction to case thermal resistance (Rth(j-c)) for the TO-220AC package is 1.9 °C/W.

  8. What are some typical applications of the STTH812D?

    Typical applications include industrial power supplies, motor control systems, and auxiliary functions like snubber, bootstrap, and demagnetization.

  9. Does the STTH812D come in lead-free packages?
  10. What is the storage temperature range for the STTH812D?

    The storage temperature range (Tstg) is -65 to +175°C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:2.2 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):100 ns
Current - Reverse Leakage @ Vr:8 µA @ 1200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$2.67
70

Please send RFQ , we will respond immediately.

Same Series
STTH812G-TR
STTH812G-TR
DIODE GEN PURP 1.2KV 8A D2PAK
STTH812DI
STTH812DI
DIODE GEN PURP 1.2KV 8A TO220LNS
STTH812FP
STTH812FP
DIODE GEN PURP 1.2KV 8A TO220FP

Similar Products

Part Number STTH812D STTH8S12D STTH812DI STTH812G STTH512D STTH802D STTH810D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V 1200 V 1200 V 200 V 1000 V
Current - Average Rectified (Io) 8A 8A 8A 8A 5A 8A 8A
Voltage - Forward (Vf) (Max) @ If 2.2 V @ 8 A 2.7 V @ 8 A 2.2 V @ 8 A 2.2 V @ 8 A 2.2 V @ 5 A 1.05 V @ 8 A 2 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 100 ns 45 ns 100 ns 100 ns 95 ns 30 ns 85 ns
Current - Reverse Leakage @ Vr 8 µA @ 1200 V 5 µA @ 1200 V 8 µA @ 1200 V 8 µA @ 1200 V 5 µA @ 1200 V 6 µA @ 200 V 5 µA @ 1000 V
Capacitance @ Vr, F - - - - - - -
Mounting Type Through Hole Through Hole Through Hole Surface Mount Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2 Insulated, TO-220AC TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220AC TO-220AC ins D2PAK TO-220AC TO-220AC TO-220AC
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
PMEG100V080ELPDZ
PMEG100V080ELPDZ
Nexperia USA Inc.
DIODE SCHOTTKY 100V 8A CFP15
BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
MUR115G
MUR115G
onsemi
DIODE GEN PURP 150V 1A AXIAL
BAS21Q-7-F
BAS21Q-7-F
Diodes Incorporated
DIODE GP SW SOT23
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
PMEG4050ETP-QX
PMEG4050ETP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
1N5711UBD
1N5711UBD
Microchip Technology
SCHOTTKY BARRIER DIODE CERAMIC S
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

ESDA6V1-5SC6Y
ESDA6V1-5SC6Y
STMicroelectronics
TVS DIODE 5.2VWM 11.4VC SOT23-6
SM6T12CA
SM6T12CA
STMicroelectronics
TVS DIODE 10.2VWM 21.7VC SMB
BTB16-800BWRG
BTB16-800BWRG
STMicroelectronics
TRIAC ALTERNISTOR 800V TO220AB
BTA16-600SWRG
BTA16-600SWRG
STMicroelectronics
TRIAC SENS GATE 600V 16A TO220AB
MJD31CT4-A
MJD31CT4-A
STMicroelectronics
TRANS NPN 100V 3A DPAK
STM32L496ZGT3
STM32L496ZGT3
STMicroelectronics
IC MCU 32BIT 1MB FLASH 144LQFP
STR912FAW46X6T
STR912FAW46X6T
STMicroelectronics
IC MCU 32BIT 1MB FLASH 128LQFP
STG3682QTR
STG3682QTR
STMicroelectronics
IC SWITCH DUAL SPDT 10QFN
L9680
L9680
STMicroelectronics
IC INTERFACE SPECIALIZED 100TQFP
TDA7491LP
TDA7491LP
STMicroelectronics
IC AMP CLSS D STER 5W POWERSSO36
TS274AIPT
TS274AIPT
STMicroelectronics
IC CMOS 4 CIRCUIT 14TSSOP
ST1S10PHR
ST1S10PHR
STMicroelectronics
IC REG BUCK ADJ 3A POWERSO-8