STTH812FP
  • Share:

STMicroelectronics STTH812FP

Manufacturer No:
STTH812FP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE GEN PURP 1.2KV 8A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH812FP is an ultrafast recovery diode produced by STMicroelectronics. This device is designed with high quality to ensure low leakage current, reproducible characteristics, and intrinsic ruggedness. It is ideal for heavy-duty applications that demand long-term reliability, such as industrial power supplies, motor control, and other mission-critical systems requiring rectification and freewheeling.

Key Specifications

Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 1200 V
IF(RMS) RMS forward current 30 A (TO-220AC / D2PAK / TO-220FPAC), 20 A (TO-220AC Ins) A
IF(AV) Average forward current, δ = 0.5 8 A (TO-220AC / D2PAK, Tc = 140° C), 8 A (TO-220FPAC, Tc = 75° C), 8 A (TO-220AC Ins, Tc = 115° C) A
IFRM Repetitive peak forward current 100 A (tp = 5 µs, F = 5 kHz square) A
IFSM Surge non-repetitive forward current 80 A (tp = 10 ms Sinusoidal) A
Tstg Storage temperature range -65 to +175 °C
Tj Maximum operating junction temperature 175 °C
VF (typ) Forward voltage drop 1.25 V (Tj = 25° C, IF = 8 A) V
trr (typ) Reverse recovery time 50 ns (IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25° C) ns
Rth(j-c) Junction to case thermal resistance 5.4 °C/W (TO-220FPAC) °C/W

Key Features

  • Ultrafast, soft recovery characteristics.
  • Very low conduction and switching losses.
  • High frequency and/or high pulsed current operation.
  • High reverse voltage capability.
  • High junction temperature tolerance.
  • Insulated packages: TO-220FPAC with electrical insulation of 2000 VRMS and capacitance of 12 pF.

Applications

The STTH812FP is suitable for a variety of demanding applications, including:

  • Industrial power supplies.
  • Motor control systems.
  • Rectification and freewheeling in mission-critical systems.
  • Auxiliary functions such as snubber, bootstrap, and demagnetization applications.

Q & A

  1. What is the repetitive peak reverse voltage of the STTH812FP?

    The repetitive peak reverse voltage (VRRM) is 1200 V.

  2. What is the RMS forward current rating for the TO-220FPAC package?

    The RMS forward current (IF(RMS)) for the TO-220FPAC package is 30 A.

  3. What is the typical forward voltage drop at 25°C and 8 A forward current?

    The typical forward voltage drop (VF) at 25°C and 8 A forward current is 1.25 V.

  4. What is the reverse recovery time for the STTH812FP?

    The reverse recovery time (trr) is typically 50 ns at IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, and Tj = 25° C.

  5. What is the maximum operating junction temperature for this diode?

    The maximum operating junction temperature (Tj) is 175°C.

  6. What types of packages are available for the STTH812FP?

    The STTH812FP is available in TO-220FPAC, TO-220AC, TO-220AC Ins, and D2PAK packages.

  7. What is the thermal resistance from junction to case for the TO-220FPAC package?

    The thermal resistance from junction to case (Rth(j-c)) for the TO-220FPAC package is 5.4 °C/W.

  8. What are some typical applications for the STTH812FP?

    Typical applications include industrial power supplies, motor control systems, and auxiliary functions like snubber, bootstrap, and demagnetization.

  9. Does the STTH812FP come in environmentally friendly packaging?

    Yes, the STTH812FP is available in ECOPACK® packages, which are lead-free and comply with JEDEC Standard JESD97.

  10. What is the storage temperature range for the STTH812FP?

    The storage temperature range (Tstg) is -65 to +175°C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:2.2 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):100 ns
Current - Reverse Leakage @ Vr:8 µA @ 1200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack, Isolated Tab
Supplier Device Package:TO-220FPAC
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$2.33
182

Please send RFQ , we will respond immediately.

Same Series
STTH812G-TR
STTH812G-TR
DIODE GEN PURP 1.2KV 8A D2PAK
STTH812DI
STTH812DI
DIODE GEN PURP 1.2KV 8A TO220LNS
STTH812FP
STTH812FP
DIODE GEN PURP 1.2KV 8A TO220FP

Similar Products

Part Number STTH812FP STTH512FP STTH802FP STTH810FP
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 200 V 1000 V
Current - Average Rectified (Io) 8A 5A 8A 8A
Voltage - Forward (Vf) (Max) @ If 2.2 V @ 8 A 2.2 V @ 5 A 1.05 V @ 8 A 2 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 100 ns 95 ns 30 ns 85 ns
Current - Reverse Leakage @ Vr 8 µA @ 1200 V 5 µA @ 1200 V 6 µA @ 200 V 5 µA @ 1000 V
Capacitance @ Vr, F - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 Full Pack, Isolated Tab TO-220-2 Full Pack, Isolated Tab TO-220-2 Full Pack, Isolated Tab TO-220-2 Full Pack, Isolated Tab
Supplier Device Package TO-220FPAC TO-220FPAC TO-220FPAC TO-220FPAC
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
MUR460M_AY_00001
MUR460M_AY_00001
Panjit International Inc.
SUPERFAST RECOVERY RECTIFIERS
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
SBAT54XV2T1G
SBAT54XV2T1G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
STTH3002G-TR
STTH3002G-TR
STMicroelectronics
DIODE GEN PURP 200V 30A D2PAK
PMEG6010CEJ/ZL115
PMEG6010CEJ/ZL115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
FFSB10120A-F085
FFSB10120A-F085
onsemi
1200V 10A AUTO SIC SBD
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
FSV530AF
FSV530AF
onsemi
DIODE SCHOTTKY 30V 5A SMAF
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35

Related Product By Brand

STTH30AC06FP
STTH30AC06FP
STMicroelectronics
DIODE GEN PURP 600V 30A TO220
BTB16-800BWRG
BTB16-800BWRG
STMicroelectronics
TRIAC ALTERNISTOR 800V TO220AB
ACST6-7SR
ACST6-7SR
STMicroelectronics
TRIAC SENS GATE 700V 6A I2PAK
STP6NK90ZFP
STP6NK90ZFP
STMicroelectronics
MOSFET N-CH 900V 5.8A TO220FP
SCTWA90N65G2V
SCTWA90N65G2V
STMicroelectronics
SILICON CARBIDE POWER MOSFET 650
TS274AIPT
TS274AIPT
STMicroelectronics
IC CMOS 4 CIRCUIT 14TSSOP
M27C2001-10F1
M27C2001-10F1
STMicroelectronics
IC EPROM 2MBIT PARALLEL 32CDIP
M68AW512ML70ND6
M68AW512ML70ND6
STMicroelectronics
IC SRAM 8MBIT PARALLEL 44TSOP II
M27C256B-90B6
M27C256B-90B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
VNQ6004SA-E
VNQ6004SA-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
VNQ6040S-E
VNQ6040S-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
L7915CP
L7915CP
STMicroelectronics
IC REG LINEAR -15V 1.5A TO220FP