STTH812G-TR
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STMicroelectronics STTH812G-TR

Manufacturer No:
STTH812G-TR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1.2KV 8A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH812G-TR is a high-performance ultrafast recovery diode manufactured by STMicroelectronics. This device is designed to offer low leakage current, reproducible characteristics, and intrinsic ruggedness, making it an excellent choice for various high-power applications. The improved performance in low leakage current and thermal runaway guard band provides a significant competitive advantage.

Key Specifications

ParameterValue
Voltage Rating (V)1200 V
Current Rating (A)8 A
Package TypeD2PAK (TO-263), 3-Pin
Recovery Time (tRR)Ultrafast Recovery
Leakage CurrentLow

Key Features

  • Ultrafast recovery time for high-efficiency switching applications.
  • Low leakage current to minimize power loss and thermal issues.
  • Intrinsic ruggedness for reliability in harsh environments.
  • Reproducible characteristics to ensure consistent performance.
  • Available in D2PAK (TO-263) package for surface mount applications.

Applications

The STTH812G-TR is suitable for a variety of high-power applications, including:

  • Switch-mode power supplies.
  • DC-DC converters.
  • Motor control and drives.
  • Renewable energy systems.
  • High-frequency switching circuits.

Q & A

  1. What is the voltage rating of the STTH812G-TR diode?
    The voltage rating of the STTH812G-TR diode is 1200 V.
  2. What is the current rating of the STTH812G-TR diode?
    The current rating of the STTH812G-TR diode is 8 A.
  3. What package type is the STTH812G-TR diode available in?
    The STTH812G-TR diode is available in a D2PAK (TO-263) package.
  4. What is the recovery time characteristic of the STTH812G-TR diode?
    The STTH812G-TR diode has an ultrafast recovery time.
  5. Why is the STTH812G-TR diode considered rugged?
    The STTH812G-TR diode is considered rugged due to its intrinsic ruggedness, which ensures reliability in harsh environments.
  6. What are some common applications for the STTH812G-TR diode?
    The STTH812G-TR diode is commonly used in switch-mode power supplies, DC-DC converters, motor control and drives, renewable energy systems, and high-frequency switching circuits.
  7. How does the STTH812G-TR diode minimize power loss?
    The STTH812G-TR diode minimizes power loss through its low leakage current.
  8. What is the significance of reproducible characteristics in the STTH812G-TR diode?
    The reproducible characteristics of the STTH812G-TR diode ensure consistent performance across different units.
  9. Where can I find detailed specifications for the STTH812G-TR diode?
    Detailed specifications for the STTH812G-TR diode can be found in the datasheet available on the STMicroelectronics website or through distributors like Mouser, Digi-Key, and RS Components.
  10. Is the STTH812G-TR diode suitable for high-frequency applications?
    Yes, the STTH812G-TR diode is suitable for high-frequency applications due to its ultrafast recovery time.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:2.2 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):100 ns
Current - Reverse Leakage @ Vr:8 µA @ 1200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
Operating Temperature - Junction:175°C (Max)
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Similar Products

Part Number STTH812G-TR STTH802G-TR STTH810G-TR
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1200 V 200 V 1000 V
Current - Average Rectified (Io) 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 2.2 V @ 8 A 1.05 V @ 8 A 2 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 100 ns 30 ns 85 ns
Current - Reverse Leakage @ Vr 8 µA @ 1200 V 6 µA @ 200 V 5 µA @ 1000 V
Capacitance @ Vr, F - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK D2PAK D2PAK
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max)

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