STTH810FP
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STMicroelectronics STTH810FP

Manufacturer No:
STTH810FP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE GEN PURP 1KV 8A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH810FP is a high-voltage, ultrafast recovery diode produced by STMicroelectronics. This diode is designed with a high-quality architecture that ensures low leakage current, reproducible characteristics, and intrinsic ruggedness. It is ideal for heavy-duty applications requiring long-term reliability, such as industrial power supplies, motor control, and other mission-critical systems that demand rectification and freewheeling capabilities.

Key Specifications

Parameter Value Unit
VRRM (Repetitive peak reverse voltage) 1000 V
IF(RMS) (RMS forward current) 30 A (TO-220FPAC)
IF(AV) (Average forward current, δ = 0.5) 8 A (Tc = 75°C)
IFRM (Repetitive peak forward current) 100 A (tp = 5 µs, F = 5 kHz square)
IFSM (Surge non-repetitive forward current) 60 A (tp = 10 ms, Sinusoidal)
Tstg (Storage temperature range) -65 to +175 °C
Tj (Maximum operating junction temperature) 175 °C
VF (Forward voltage drop) 1.30 V (Tj = 25°C, IF = 8 A)
trr (Reverse recovery time) 47 ns (IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25°C)
Rth(j-c) (Junction to case thermal resistance) 5.8 °C/W (TO-220FPAC)

Key Features

  • Ultrafast, soft recovery characteristics
  • Very low conduction and switching losses
  • High frequency and/or high pulsed current operation capability
  • High reverse voltage capability (up to 1000 V)
  • High junction temperature (up to 175°C)
  • Insulated packages with high electrical insulation (2500 VRMS) and low capacitance
  • Low leakage current and thermal runaway guard band for improved performance

Applications

The STTH810FP is suitable for a variety of demanding applications, including:

  • Industrial power supplies
  • Motor control systems
  • Rectification and freewheeling in mission-critical systems
  • Auxiliary functions such as snubber, bootstrap, and demagnetization applications

Q & A

  1. What is the repetitive peak reverse voltage (VRRM) of the STTH810FP?

    The VRRM of the STTH810FP is 1000 V.

  2. What is the maximum RMS forward current (IF(RMS)) for the TO-220FPAC package?

    The maximum RMS forward current for the TO-220FPAC package is 30 A.

  3. What is the average forward current (IF(AV)) for the TO-220FPAC package at Tc = 75°C?

    The average forward current for the TO-220FPAC package at Tc = 75°C is 8 A.

  4. What is the maximum operating junction temperature (Tj) of the STTH810FP?

    The maximum operating junction temperature is 175°C.

  5. What is the typical forward voltage drop (VF) at Tj = 25°C and IF = 8 A?

    The typical forward voltage drop at Tj = 25°C and IF = 8 A is 1.30 V.

  6. What is the typical reverse recovery time (trr) at IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, and Tj = 25°C?

    The typical reverse recovery time under these conditions is 47 ns.

  7. What is the junction to case thermal resistance (Rth(j-c)) for the TO-220FPAC package?

    The junction to case thermal resistance for the TO-220FPAC package is 5.8 °C/W.

  8. In what types of applications is the STTH810FP typically used?

    The STTH810FP is typically used in industrial power supplies, motor control systems, and other mission-critical systems requiring rectification and freewheeling.

  9. Does the STTH810FP come in insulated packages?
  10. What are the benefits of the low leakage current in the STTH810FP?

    The low leakage current provides improved performance and a wider thermal runaway guard band, which is an immediate competitive advantage.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:2 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):85 ns
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack, Isolated Tab
Supplier Device Package:TO-220FPAC
Operating Temperature - Junction:175°C (Max)
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Same Series
STTH810D
STTH810D
DIODE GEN PURP 1KV 8A TO220AC
STTH810DI
STTH810DI
DIODE GEN PURP 1KV 8A TO220Ins

Similar Products

Part Number STTH810FP STTH812FP
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1200 V
Current - Average Rectified (Io) 8A 8A
Voltage - Forward (Vf) (Max) @ If 2 V @ 8 A 2.2 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 85 ns 100 ns
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 8 µA @ 1200 V
Capacitance @ Vr, F - -
Mounting Type Through Hole Through Hole
Package / Case TO-220-2 Full Pack, Isolated Tab TO-220-2 Full Pack, Isolated Tab
Supplier Device Package TO-220FPAC TO-220FPAC
Operating Temperature - Junction 175°C (Max) 175°C (Max)

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