STS9NF3LL
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STMicroelectronics STS9NF3LL

Manufacturer No:
STS9NF3LL
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 9A 8SO
Delivery:
Payment:
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Product Introduction

Overview

The STS9NF3LL is a high-performance N-Channel MOSFET produced by STMicroelectronics. This device is designed for a variety of power management applications, offering a balance of high current handling and low on-resistance. The MOSFET is packaged in an 8-SOIC (Small Outline Integrated Circuit) package, making it suitable for surface mount assembly.

Key Specifications

ParameterValue
Drain-Source Voltage (Vdss)30 V
Continuous Drain Current (Id)9 A
Power Dissipation (Pd)2.5 W
Package Type8-SOIC
Avalanche Tested100% tested

Key Features

  • High current handling capability of up to 9 A.
  • Low on-resistance, enhancing efficiency in power management applications.
  • 100% avalanche tested, ensuring robustness against transient conditions.
  • Zener-protected, providing additional protection against voltage spikes.
  • Ideal for use in flyback converters and LED lighting applications.

Applications

The STS9NF3LL MOSFET is well-suited for various power management and conversion applications, including:

  • Flyback converters: Due to its high current handling and low on-resistance, it is ideal for flyback converter designs.
  • LED lighting: The MOSFET's robustness and efficiency make it a good choice for LED lighting systems.
  • General power switching: It can be used in a wide range of power switching applications requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage of the STS9NF3LL MOSFET?
    The maximum drain-source voltage (Vdss) is 30 V.
  2. What is the continuous drain current rating of the STS9NF3LL?
    The continuous drain current (Id) is 9 A.
  3. What is the package type of the STS9NF3LL MOSFET?
    The package type is 8-SOIC.
  4. Is the STS9NF3LL MOSFET avalanche tested?
    Yes, it is 100% avalanche tested.
  5. What are some common applications for the STS9NF3LL MOSFET?
    It is commonly used in flyback converters, LED lighting, and general power switching applications.
  6. What is the power dissipation rating of the STS9NF3LL?
    The power dissipation (Pd) is 2.5 W.
  7. Does the STS9NF3LL have any built-in protection features?
    Yes, it is Zener-protected, providing additional protection against voltage spikes.
  8. What is the significance of the 8-SOIC package for the STS9NF3LL?
    The 8-SOIC package is suitable for surface mount assembly, making it convenient for modern PCB designs.
  9. How does the STS9NF3LL MOSFET enhance efficiency in power management applications?
    It enhances efficiency due to its low on-resistance, which reduces power losses during operation.
  10. Where can I purchase the STS9NF3LL MOSFET?
    You can purchase the STS9NF3LL from distributors such as Digi-Key, Mouser Electronics, and other authorized suppliers.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:19mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number STS9NF3LL STS9NH3LL STS9NF30L
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 9A (Tc) 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 4.5A, 10V 22mOhm @ 4.5A, 10V 20mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 5 V 10 nC @ 4.5 V 12.5 nC @ 4.5 V
Vgs (Max) ±16V ±16V ±18V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 25 V 857 pF @ 25 V 730 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Tc) 2.5W (Tc) 2.5W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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