STR2P3LLH6
  • Share:

STMicroelectronics STR2P3LLH6

Manufacturer No:
STR2P3LLH6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 2A SOT-23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STR2P3LLH6 is a P-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET™ H6 technology. This device features a new trench gate structure, which results in very low on-resistance (RDS(on)) across all packages. It is designed for high-performance applications requiring low power loss and high reliability.

Key Specifications

Parameter Value Unit
Drain-source voltage (VDS) -30 V
Gate-source voltage (VGS) ±20 V
Drain current (ID) continuous at Tpcb = 25 °C -2 A
Drain current (ID) continuous at Tpcb = 100 °C -1.2 A
Pulsed drain current (IDM) -8 A
Total dissipation at Tpcb = 25 °C 0.35 W
Operating junction temperature range -55 to 150 °C
On-state resistance (RDS(on)) 48 to 90
Gate charge (Qg) 6 nC
Package SOT-23

Key Features

  • Very low on-resistance (RDS(on))
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss

Applications

The STR2P3LLH6 is suitable for various switching applications, including those in personal electronics and other high-performance systems where low power loss and high reliability are crucial.

Q & A

  1. What is the STR2P3LLH6?

    The STR2P3LLH6 is a P-channel Power MOSFET developed by STMicroelectronics using the STripFET™ H6 technology.

  2. What is the maximum drain-source voltage (VDS) of the STR2P3LLH6?

    The maximum drain-source voltage (VDS) is -30 V.

  3. What is the typical on-state resistance (RDS(on)) of the STR2P3LLH6?

    The typical on-state resistance (RDS(on)) is 48 mΩ.

  4. What is the maximum continuous drain current (ID) at Tpcb = 25 °C?

    The maximum continuous drain current (ID) at Tpcb = 25 °C is -2 A.

  5. What is the package type of the STR2P3LLH6?

    The package type is SOT-23.

  6. What are the key features of the STR2P3LLH6?

    The key features include very low on-resistance, very low gate charge, high avalanche ruggedness, and low gate drive power loss.

  7. What are the typical applications of the STR2P3LLH6?

    The STR2P3LLH6 is suitable for switching applications, including those in personal electronics.

  8. What is the operating junction temperature range of the STR2P3LLH6?

    The operating junction temperature range is -55 to 150 °C.

  9. What is the total dissipation at Tpcb = 25 °C for the STR2P3LLH6?

    The total dissipation at Tpcb = 25 °C is 0.35 W.

  10. What is the gate charge (Qg) of the STR2P3LLH6?

    The gate charge (Qg) is 6 nC.

  11. Is the STR2P3LLH6 RoHS compliant?

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:56mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:639 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):350mW (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.54
1,065

Please send RFQ , we will respond immediately.

Related Product By Categories

BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN

Related Product By Brand

STPS160H100TV
STPS160H100TV
STMicroelectronics
DIODE MODULE 100V 80A ISOTOP
BYT71-800
BYT71-800
STMicroelectronics
DIODE GEN PURP 800V 6A TO220AC
SD2931-10W
SD2931-10W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M174
TDA7418
TDA7418
STMicroelectronics
IC AUDIO SIGNAL PROCESSOR 20SO
STM32F103T6U6A
STM32F103T6U6A
STMicroelectronics
IC MCU 32BIT 32KB FLASH 36VFQFPN
STM32F100VDT6B
STM32F100VDT6B
STMicroelectronics
IC MCU 32BIT 384KB FLASH 100LQFP
TS914ID
TS914ID
STMicroelectronics
IC CMOS 4 CIRCUIT 14SO
TS339IPT
TS339IPT
STMicroelectronics
IC COMP MICROPWR QUAD V 14 TSSOP
M24C32-RMN6TP
M24C32-RMN6TP
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
L9301-TR
L9301-TR
STMicroelectronics
IC PWR DRIVER N-CHANNEL PWRSSO36
L79L15ACD13TR
L79L15ACD13TR
STMicroelectronics
IC REG LINEAR -15V 100MA 8SO
LPR450AL
LPR450AL
STMicroelectronics
GYRO 500DEG/S 2MV 140HZ 28LGA