STR2P3LLH6
  • Share:

STMicroelectronics STR2P3LLH6

Manufacturer No:
STR2P3LLH6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 2A SOT-23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STR2P3LLH6 is a P-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET™ H6 technology. This device features a new trench gate structure, which results in very low on-resistance (RDS(on)) across all packages. It is designed for high-performance applications requiring low power loss and high reliability.

Key Specifications

Parameter Value Unit
Drain-source voltage (VDS) -30 V
Gate-source voltage (VGS) ±20 V
Drain current (ID) continuous at Tpcb = 25 °C -2 A
Drain current (ID) continuous at Tpcb = 100 °C -1.2 A
Pulsed drain current (IDM) -8 A
Total dissipation at Tpcb = 25 °C 0.35 W
Operating junction temperature range -55 to 150 °C
On-state resistance (RDS(on)) 48 to 90
Gate charge (Qg) 6 nC
Package SOT-23

Key Features

  • Very low on-resistance (RDS(on))
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss

Applications

The STR2P3LLH6 is suitable for various switching applications, including those in personal electronics and other high-performance systems where low power loss and high reliability are crucial.

Q & A

  1. What is the STR2P3LLH6?

    The STR2P3LLH6 is a P-channel Power MOSFET developed by STMicroelectronics using the STripFET™ H6 technology.

  2. What is the maximum drain-source voltage (VDS) of the STR2P3LLH6?

    The maximum drain-source voltage (VDS) is -30 V.

  3. What is the typical on-state resistance (RDS(on)) of the STR2P3LLH6?

    The typical on-state resistance (RDS(on)) is 48 mΩ.

  4. What is the maximum continuous drain current (ID) at Tpcb = 25 °C?

    The maximum continuous drain current (ID) at Tpcb = 25 °C is -2 A.

  5. What is the package type of the STR2P3LLH6?

    The package type is SOT-23.

  6. What are the key features of the STR2P3LLH6?

    The key features include very low on-resistance, very low gate charge, high avalanche ruggedness, and low gate drive power loss.

  7. What are the typical applications of the STR2P3LLH6?

    The STR2P3LLH6 is suitable for switching applications, including those in personal electronics.

  8. What is the operating junction temperature range of the STR2P3LLH6?

    The operating junction temperature range is -55 to 150 °C.

  9. What is the total dissipation at Tpcb = 25 °C for the STR2P3LLH6?

    The total dissipation at Tpcb = 25 °C is 0.35 W.

  10. What is the gate charge (Qg) of the STR2P3LLH6?

    The gate charge (Qg) is 6 nC.

  11. Is the STR2P3LLH6 RoHS compliant?

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:56mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:639 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):350mW (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.54
1,065

Please send RFQ , we will respond immediately.

Related Product By Categories

CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK

Related Product By Brand

STPS3150UF
STPS3150UF
STMicroelectronics
DIODE SCHOTTKY 150V 3A SMBFLAT
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
BAT54JFILM
BAT54JFILM
STMicroelectronics
DIODE SCHOTTKY 40V 300MA SOD323
BD140-16
BD140-16
STMicroelectronics
TRANS PNP 80V 1.5A SOT32
MJD31CT4-A
MJD31CT4-A
STMicroelectronics
TRANS NPN 100V 3A DPAK
STGWA19NC60HD
STGWA19NC60HD
STMicroelectronics
IGBT 600V 52A 208W TO247
STM32F207ZET6TR
STM32F207ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32L151VCH6
STM32L151VCH6
STMicroelectronics
IC MCU 32BIT 256KB FLSH 100UFBGA
M24C04-WMN6
M24C04-WMN6
STMicroelectronics
IC EEPROM 4KBIT I2C 400KHZ 8SO
VNS3NV04-E
VNS3NV04-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
L78M15CDT-TR
L78M15CDT-TR
STMicroelectronics
IC REG LINEAR 15V 500MA DPAK
L5050STR
L5050STR
STMicroelectronics
IC REG LINEAR 5V 50MA 8SO