STR2P3LLH6
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STMicroelectronics STR2P3LLH6

Manufacturer No:
STR2P3LLH6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 2A SOT-23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STR2P3LLH6 is a P-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET™ H6 technology. This device features a new trench gate structure, which results in very low on-resistance (RDS(on)) across all packages. It is designed for high-performance applications requiring low power loss and high reliability.

Key Specifications

Parameter Value Unit
Drain-source voltage (VDS) -30 V
Gate-source voltage (VGS) ±20 V
Drain current (ID) continuous at Tpcb = 25 °C -2 A
Drain current (ID) continuous at Tpcb = 100 °C -1.2 A
Pulsed drain current (IDM) -8 A
Total dissipation at Tpcb = 25 °C 0.35 W
Operating junction temperature range -55 to 150 °C
On-state resistance (RDS(on)) 48 to 90
Gate charge (Qg) 6 nC
Package SOT-23

Key Features

  • Very low on-resistance (RDS(on))
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss

Applications

The STR2P3LLH6 is suitable for various switching applications, including those in personal electronics and other high-performance systems where low power loss and high reliability are crucial.

Q & A

  1. What is the STR2P3LLH6?

    The STR2P3LLH6 is a P-channel Power MOSFET developed by STMicroelectronics using the STripFET™ H6 technology.

  2. What is the maximum drain-source voltage (VDS) of the STR2P3LLH6?

    The maximum drain-source voltage (VDS) is -30 V.

  3. What is the typical on-state resistance (RDS(on)) of the STR2P3LLH6?

    The typical on-state resistance (RDS(on)) is 48 mΩ.

  4. What is the maximum continuous drain current (ID) at Tpcb = 25 °C?

    The maximum continuous drain current (ID) at Tpcb = 25 °C is -2 A.

  5. What is the package type of the STR2P3LLH6?

    The package type is SOT-23.

  6. What are the key features of the STR2P3LLH6?

    The key features include very low on-resistance, very low gate charge, high avalanche ruggedness, and low gate drive power loss.

  7. What are the typical applications of the STR2P3LLH6?

    The STR2P3LLH6 is suitable for switching applications, including those in personal electronics.

  8. What is the operating junction temperature range of the STR2P3LLH6?

    The operating junction temperature range is -55 to 150 °C.

  9. What is the total dissipation at Tpcb = 25 °C for the STR2P3LLH6?

    The total dissipation at Tpcb = 25 °C is 0.35 W.

  10. What is the gate charge (Qg) of the STR2P3LLH6?

    The gate charge (Qg) is 6 nC.

  11. Is the STR2P3LLH6 RoHS compliant?

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:56mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:639 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):350mW (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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