Overview
The STP80N70F4 is an N-channel Power MOSFET developed by STMicroelectronics using their advanced STripFET™ DeepGATE™ technology. This device is designed to offer high performance and reliability in various power management applications. It features a new gate structure that enhances its switching characteristics and overall efficiency.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Maximum Drain-Source Voltage (VDS) | 68 | V |
| Maximum Gate-Source Voltage (VGS) | 20 | V |
| Maximum Gate-Threshold Voltage (VGS(th)) | 4 | V |
| Maximum Drain Current (ID) | 85 | A |
| Maximum Junction Temperature (TJ) | 175 | °C |
| Maximum Drain-Source On-State Resistance (RDS(on)) | 0.0098 | Ω |
| Total Gate Charge (Qg) | 90 | nC |
| Rise Time (tr) | 36 | nS |
| Output Capacitance (Coss) | 430 | pF |
| Maximum Power Dissipation (Pd) | 150 | W |
| Package | TO-220 |
Key Features
- Advanced STripFET™ DeepGATE™ technology for improved switching performance and efficiency.
- Low on-state resistance (RDS(on)) of 0.0098 Ω, reducing power losses.
- High drain current capability of up to 85 A.
- Maximum drain-source voltage of 68 V, suitable for a wide range of applications.
- Low gate charge and fast switching times, enhancing overall system performance.
- 100% avalanche tested to ensure robust device performance and reliable operation.
- Minimum lot-to-lot variations for consistent device behavior.
Applications
- Motor drives and control systems.
- DC-DC converters and power supplies.
- Solenoid and relay drivers.
- Automotive systems, including ABS and other power management applications.
- General power switching and power management in industrial and consumer electronics.
Q & A
- What is the maximum drain-source voltage of the STP80N70F4?
The maximum drain-source voltage (VDS) is 68 V. - What is the maximum drain current of the STP80N70F4?
The maximum drain current (ID) is 85 A. - What is the typical on-state resistance of the STP80N70F4?
The typical on-state resistance (RDS(on)) is 0.0098 Ω. - What is the maximum junction temperature of the STP80N70F4?
The maximum junction temperature (TJ) is 175 °C. - What package type is the STP80N70F4 available in?
The STP80N70F4 is available in the TO-220 package. - What technology is used in the STP80N70F4?
The STP80N70F4 uses STMicroelectronics' STripFET™ DeepGATE™ technology. - Is the STP80N70F4 100% avalanche tested?
Yes, the STP80N70F4 is 100% avalanche tested for robust device performance and reliable operation. - What are some common applications of the STP80N70F4?
Common applications include motor drives, DC-DC converters, solenoid and relay drivers, and automotive systems. - What is the total gate charge of the STP80N70F4?
The total gate charge (Qg) is 90 nC. - What is the rise time of the STP80N70F4?
The rise time (tr) is 36 nS.
