STP77N6F6
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STMicroelectronics STP77N6F6

Manufacturer No:
STP77N6F6
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 60V 77A TO220
Delivery:
Payment:
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Product Introduction

Overview

The STP77N6F6 is an N-channel Power MOSFET developed by STMicroelectronics using the 6th generation of STripFET™ DeepGATE™ technology. This device is designed to offer high performance and reliability in power switching applications. Despite being listed as an obsolete product, it remains a significant component in various legacy systems and designs.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 60 V
ID (Drain Current) 77 A
RDS(on) (On-Resistance) 0.0063 (typ.) Ω
PD (Power Dissipation) 80 W
VGS(th) (Gate-Source Threshold Voltage) 4 (at 250 μA) V
Package TO-220

Key Features

  • Developed using the 6th generation of STripFET™ DeepGATE™ technology with a new gate structure for improved performance.
  • Low on-resistance (RDS(on)) of 0.0063 Ω (typ.) for efficient power switching.
  • 100% avalanche tested for reliability.
  • Zener-protected for enhanced robustness.

Applications

  • Flyback converters due to its high efficiency and reliability.
  • LED lighting systems where high current handling and low on-resistance are crucial.
  • General power switching applications requiring high current and low resistance).

Q & A

  1. What is the drain-source voltage rating of the STP77N6F6?

    The drain-source voltage rating of the STP77N6F6 is 60 V).

  2. What is the typical on-resistance of the STP77N6F6?

    The typical on-resistance (RDS(on)) of the STP77N6F6 is 0.0063 Ω).

  3. What package type is the STP77N6F6 available in?

    The STP77N6F6 is available in the TO-220 package).

  4. Is the STP77N6F6 100% avalanche tested?

    Yes, the STP77N6F6 is 100% avalanche tested).

  5. What are some common applications of the STP77N6F6?

    The STP77N6F6 is commonly used in flyback converters, LED lighting systems, and general power switching applications).

  6. What is the maximum drain current of the STP77N6F6?

    The maximum drain current (ID) of the STP77N6F6 is 77 A).

  7. Is the STP77N6F6 Zener-protected?

    Yes, the STP77N6F6 is Zener-protected for enhanced robustness).

  8. What technology is used in the development of the STP77N6F6?

    The STP77N6F6 is developed using the 6th generation of STripFET™ DeepGATE™ technology).

  9. What is the power dissipation rating of the STP77N6F6?

    The power dissipation rating (PD) of the STP77N6F6 is 80 W).

  10. Is the STP77N6F6 an obsolete product?

    Yes, the STP77N6F6 is listed as an obsolete product).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:77A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7mOhm @ 38.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:76 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):80W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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