STP75NS04Z
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STMicroelectronics STP75NS04Z

Manufacturer No:
STP75NS04Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 33V 80A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP75NS04Z is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is fabricated using the advanced Mesh Overlay process, which is based on a novel strip layout. It is designed to provide high efficiency and reliability in various power management applications. The STP75NS04Z is fully clamped and features a low on-resistance of 7 mΩ and a high current rating of 80 A, making it suitable for demanding power switching tasks.

Key Specifications

ParameterValue
Part NumberSTP75NS04Z
ManufacturerSTMicroelectronics
MOSFET TypeN-channel Clamped
On-resistance (Rds(on))7 mΩ
Drain Current (Id)80 A
Package TypeTO-220
Vds (Drain-Source Voltage)40 V
Vgs (Gate-Source Voltage)±20 V

Key Features

  • Low on-resistance (Rds(on)) of 7 mΩ for high efficiency.
  • High drain current (Id) of 80 A for robust power handling.
  • Fully protected with built-in clamping diodes for enhanced reliability.
  • Mesh Overlay process for improved performance and durability.
  • TO-220 package for easy mounting and heat dissipation.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-power switching applications.
  • Automotive and industrial power management systems.
  • Renewable energy systems, such as solar and wind power.

Q & A

  1. What is the part number of this MOSFET? The part number is STP75NS04Z.
  2. Who is the manufacturer of the STP75NS04Z? The manufacturer is STMicroelectronics.
  3. What is the on-resistance (Rds(on)) of the STP75NS04Z? The on-resistance is 7 mΩ.
  4. What is the maximum drain current (Id) of the STP75NS04Z? The maximum drain current is 80 A.
  5. What package type does the STP75NS04Z come in? The STP75NS04Z comes in a TO-220 package.
  6. What is the maximum drain-source voltage (Vds) of the STP75NS04Z? The maximum drain-source voltage is 40 V.
  7. What is the maximum gate-source voltage (Vgs) of the STP75NS04Z? The maximum gate-source voltage is ±20 V.
  8. What process is used to fabricate the STP75NS04Z? The STP75NS04Z is fabricated using the Mesh Overlay process.
  9. Is the STP75NS04Z fully protected? Yes, the STP75NS04Z is fully protected with built-in clamping diodes.
  10. What are some common applications of the STP75NS04Z? Common applications include power supplies, motor control systems, high-power switching, automotive systems, and renewable energy systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):33 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:1860 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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