Overview
The STP190N55LF3 is a high-performance N-channel power MOSFET from STMicroelectronics, designed for a wide range of industrial and automotive applications. This device is part of the STPOWER portfolio, known for its high efficiency and reliability. The STP190N55LF3 features advanced technology that minimizes losses and maximizes power handling capabilities, making it an ideal choice for demanding power management systems.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 55 | V |
| RDS(on) (On-State Resistance) | 2.9 | mΩ |
| ID (Drain Current) | 120 | A |
| Package | TO-220 | - |
| Technology | STripFETTM | - |
Key Features
- Low On-State Resistance: The STP190N55LF3 features a low RDS(on) of 2.9 mΩ, which reduces conduction losses and improves overall system efficiency.
- High Drain Current: With a maximum drain current of 120 A, this MOSFET is suitable for high-power applications.
- Advanced STripFETTM Technology: This technology enhances the device's performance by optimizing the gate structure and reducing switching losses.
- Robust Package: The TO-220 package provides good thermal dissipation and mechanical robustness, making it suitable for harsh environments.
Applications
- Industrial Power Supplies: Suitable for high-power DC-DC converters, motor drives, and other industrial power supply applications.
- Automotive Systems: Used in automotive systems such as electric vehicles, battery management systems, and other high-power automotive applications.
- Renewable Energy Systems: Applicable in solar and wind power systems where high efficiency and reliability are crucial.
Q & A
- What is the maximum drain-source voltage of the STP190N55LF3?
The maximum drain-source voltage (VDS) is 55 V.
- What is the typical on-state resistance of the STP190N55LF3?
The typical on-state resistance (RDS(on)) is 2.9 mΩ.
- What is the maximum drain current of the STP190N55LF3?
The maximum drain current (ID) is 120 A.
- In what package is the STP190N55LF3 available?
The STP190N55LF3 is available in the TO-220 package.
- What technology is used in the STP190N55LF3?
The STP190N55LF3 uses STMicroelectronics' advanced STripFETTM technology.
- What are some typical applications for the STP190N55LF3?
Typical applications include industrial power supplies, automotive systems, and renewable energy systems.
- Why is the STP190N55LF3 suitable for high-power applications?
It is suitable due to its low on-state resistance, high drain current, and robust packaging.
- How does the STripFETTM technology enhance the performance of the STP190N55LF3?
The STripFETTM technology optimizes the gate structure and reduces switching losses, enhancing overall device performance.
- What are the benefits of using the TO-220 package for the STP190N55LF3?
The TO-220 package provides good thermal dissipation and mechanical robustness, making it suitable for harsh environments.
- Is the STP190N55LF3 suitable for automotive applications?
Yes, it is suitable for automotive applications due to its high reliability and performance under harsh conditions.
