STP12NK30Z
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STMicroelectronics STP12NK30Z

Manufacturer No:
STP12NK30Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 300V 9A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP12NK30Z is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of the SuperMESH series, known for its advanced technology that provides high efficiency and reliability. The STP12NK30Z is housed in a TO-220 package, making it suitable for a variety of power management applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)300 V
Current Rating (Id)9 A
On-Resistance (Rds(on))0.36 Ω (typ.)
Package TypeTO-220
Avalanche Capability100% Avalanche Tested
ESD CapabilityImproved ESD Capability
dV/dt CapabilityExtremely high dV/dt capability

Key Features

  • High voltage rating of 300 V, making it suitable for high-power applications.
  • Low on-resistance of 0.36 Ω, which minimizes power losses and enhances efficiency.
  • High current rating of 9 A, supporting a wide range of load requirements.
  • 100% avalanche tested, ensuring robustness against transient conditions.
  • Improved ESD capability, providing enhanced protection against electrostatic discharge.
  • Extremely high dV/dt capability, allowing for fast switching and high reliability in dynamic environments.

Applications

The STP12NK30Z is designed for use in various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power.
  • High-efficiency switching applications requiring low on-resistance and high current handling.

Q & A

  1. What is the voltage rating of the STP12NK30Z MOSFET?
    The voltage rating of the STP12NK30Z is 300 V.
  2. What is the current rating of the STP12NK30Z MOSFET?
    The current rating of the STP12NK30Z is 9 A.
  3. What is the on-resistance (Rds(on)) of the STP12NK30Z?
    The on-resistance (Rds(on)) of the STP12NK30Z is 0.36 Ω (typ.).
  4. What package type is the STP12NK30Z available in?
    The STP12NK30Z is available in a TO-220 package.
  5. Does the STP12NK30Z have avalanche protection?
    Yes, the STP12NK30Z is 100% avalanche tested.
  6. What are some key applications for the STP12NK30Z?
    The STP12NK30Z is suitable for power supplies, motor control, industrial automation, renewable energy systems, and other high-efficiency switching applications.
  7. What is the dV/dt capability of the STP12NK30Z?
    The STP12NK30Z has an extremely high dV/dt capability.
  8. Does the STP12NK30Z have improved ESD protection?
    Yes, the STP12NK30Z has improved ESD capability.
  9. Where can I find detailed specifications for the STP12NK30Z?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website or through distributors like Newark and Mouser.
  10. What is the SuperMESH technology in the STP12NK30Z?
    SuperMESH is an advanced technology by STMicroelectronics that enhances the performance of MOSFETs by providing lower on-resistance, higher efficiency, and improved reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:670 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP12NK30Z STP12NK80Z STP12NK60Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Not For New Designs Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 800 V 600 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 10.5A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 4.5A, 10V 750mOhm @ 5.25A, 10V 640mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 87 nC @ 10 V 59 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 670 pF @ 25 V 2620 pF @ 25 V 1740 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 90W (Tc) 190W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

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