Overview
The STO36N60M6 is a high-performance N-channel power MOSFET developed by STMicroelectronics, utilizing the advanced MDmesh M6 technology. This device is designed to offer excellent switching behavior, reduced switching losses, and improved RDS(on) per area compared to previous generations. The STO36N60M6 is packaged in a TO-LL type A package, making it suitable for a variety of high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 600 | V |
| RDS(on) (On-Resistance) | 85 mΩ (typ.), 99 mΩ (max.) | mΩ |
| ID (Drain Current) | 30 A (continuous at TC = 25 °C), 19 A (continuous at TC = 100 °C) | A |
| IDM (Drain Current, Pulsed) | 102 A | A |
| VGS (Gate-Source Voltage) | ±25 | V |
| PTOT (Total Power Dissipation at TC = 25 °C) | 230 | W |
| Tstg (Storage Temperature Range) | -55 to 150 | °C |
| TJ (Operating Junction Temperature Range) | -55 to 150 | °C |
| RthJC (Thermal Resistance, Junction-to-Case) | 0.54 | °C/W |
Key Features
- Reduced switching losses
- Lower RDS(on) per area compared to previous generations
- Low gate input resistance
- 100% avalanche tested
- Zener-protected gate
- Excellent switching performance thanks to the extra driving source pin
Applications
The STO36N60M6 is suitable for various high-power switching applications, including but not limited to:
- Power supplies and converters
- Motor control and drives
- Industrial and automotive systems
- High-frequency switching circuits
Q & A
- What is the maximum drain-source voltage (VDS) of the STO36N60M6?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance (RDS(on)) of the STO36N60M6?
The typical on-resistance (RDS(on)) is 85 mΩ.
- What is the maximum continuous drain current (ID) at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 30 A.
- What is the storage temperature range for the STO36N60M6?
The storage temperature range is -55 to 150 °C.
- What package type is the STO36N60M6 available in?
The STO36N60M6 is available in a TO-LL type A package.
- What are the key features of the MDmesh M6 technology used in the STO36N60M6?
The key features include reduced switching losses, lower RDS(on) per area, low gate input resistance, 100% avalanche tested, and Zener-protected gate.
- What is the thermal resistance from junction to case (RthJC) for the STO36N60M6?
The thermal resistance from junction to case (RthJC) is 0.54 °C/W.
- What are some typical applications for the STO36N60M6?
Typical applications include power supplies and converters, motor control and drives, industrial and automotive systems, and high-frequency switching circuits.
- Is the STO36N60M6 environmentally compliant?
Yes, the STO36N60M6 is available in ECOPACK packages, which meet various environmental compliance standards.
- What is the maximum total power dissipation (PTOT) at 25 °C for the STO36N60M6?
The maximum total power dissipation (PTOT) at 25 °C is 230 W.
