STN3N40K3
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STMicroelectronics STN3N40K3

Manufacturer No:
STN3N40K3
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 400V 1.8A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STN3N40K3 is a high-performance N-channel power MOSFET manufactured by STMicroelectronics. This device is designed to meet the demands of various power management applications with its superior dynamic performance, extremely low on-resistance, and high avalanche capability. The STN3N40K3 is packaged in the SOT-223 format, making it suitable for surface mount applications.

Key Specifications

ParameterValue
Drain-Source Voltage (Vds)400 V
Drain Current (Id)1.8 A (Tc), 1 A (continuous)
On-Resistance (Rds(on))3.4 Ω @ 10 V, 0.6 A
Power Dissipation (Pd)3.3 W @ Ta, 2.5 W @ Tc
PackageSOT-223
Operating Temperature Range-55°C to 150°C

Key Features

  • Extremely low on-resistance (Rds(on)) for efficient power management.
  • High avalanche capability, enhancing reliability in demanding applications.
  • Superior dynamic performance, suitable for high-frequency operations.
  • Surface mount SOT-223 package for ease of integration.
  • Compliance with RoHS standards.

Applications

The STN3N40K3 is versatile and can be used in a variety of applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Switching and power management in industrial and automotive systems.
  • High-frequency switching applications.

Q & A

  1. What is the drain-source voltage rating of the STN3N40K3?
    The drain-source voltage rating of the STN3N40K3 is 400 V.
  2. What is the maximum drain current for the STN3N40K3?
    The maximum drain current for the STN3N40K3 is 1.8 A (Tc) and 1 A (continuous).
  3. What is the on-resistance (Rds(on)) of the STN3N40K3?
    The on-resistance (Rds(on)) of the STN3N40K3 is 3.4 Ω @ 10 V, 0.6 A.
  4. What package type is the STN3N40K3 available in?
    The STN3N40K3 is available in the SOT-223 package.
  5. What is the power dissipation (Pd) of the STN3N40K3?
    The power dissipation (Pd) of the STN3N40K3 is 3.3 W @ Ta, 2.5 W @ Tc.
  6. Is the STN3N40K3 RoHS compliant?
    Yes, the STN3N40K3 is RoHS compliant.
  7. What are some common applications for the STN3N40K3?
    The STN3N40K3 is commonly used in power supplies, DC-DC converters, motor control systems, and high-frequency switching applications.
  8. What is the operating temperature range for the STN3N40K3?
    The operating temperature range for the STN3N40K3 is -55°C to 150°C.
  9. What are the key features of the STN3N40K3?
    The key features include extremely low on-resistance, high avalanche capability, superior dynamic performance, and a surface mount SOT-223 package.
  10. Where can I find detailed specifications for the STN3N40K3?
    Detailed specifications for the STN3N40K3 can be found in the datasheet available on STMicroelectronics' official website and other electronic component suppliers like Digi-Key and LCSC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.4Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:165 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):3.3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number STN3N40K3 STN3N45K3
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 450 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Tc) 600mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3.4Ohm @ 600mA, 10V 4Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V 9.5 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 165 pF @ 50 V 164 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 3.3W (Ta) 3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223 SOT-223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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