STF40N60M2
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STMicroelectronics STF40N60M2

Manufacturer No:
STF40N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 34A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF40N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is designed to offer high efficiency and reliability in various power switching applications. It is available in TO-220FP, I2PAKFP (TO-281), and TO-3PF packages, making it versatile for different design requirements. The MOSFET features a low on-resistance and optimized switching characteristics, making it suitable for demanding high-efficiency converters.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
RDS(on) (Static Drain-Source On-Resistance) 0.078 Ω (typ.), 0.088 Ω (max.)
ID (Drain Current, Continuous at TC = 25 °C) 34 A A
ID (Drain Current, Continuous at TC = 100 °C) 22 A A
IDM (Drain Current, Pulsed) 136 A A
VGS (Gate-Source Voltage) ± 25 V V
Tj (Operating Junction Temperature Range) -55 to 150 °C °C
PTOT (Total Dissipation at TC = 25 °C) 40 W (TO-220FP, I2PAKFP), 63 W (TO-3PF) W
Rthj-case (Thermal Resistance Junction-Case) 3.13 °C/W (TO-220FP, I2PAKFP), 2.00 °C/W (TO-3PF) °C/W

Key Features

  • Extremely low gate charge
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected
  • Low on-resistance and optimized switching characteristics

Applications

  • Switching applications
  • LLC converters
  • Resonant converters

Q & A

  1. What is the maximum drain-source voltage of the STF40N60M2?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance of the STF40N60M2?

    The typical on-resistance (RDS(on)) is 0.078 Ω.

  3. What are the package options for the STF40N60M2?

    The device is available in TO-220FP, I2PAKFP (TO-281), and TO-3PF packages.

  4. What is the maximum continuous drain current at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 34 A.

  5. What is the thermal resistance junction-case for the TO-220FP package?

    The thermal resistance junction-case (Rthj-case) for the TO-220FP package is 3.13 °C/W.

  6. Is the STF40N60M2 100% avalanche tested?
  7. What are some common applications for the STF40N60M2?
  8. What is the gate-source voltage range for the STF40N60M2?

    The gate-source voltage (VGS) range is ± 25 V.

  9. What is the maximum pulse drain current for the STF40N60M2?

    The maximum pulse drain current (IDM) is 136 A.

  10. What is the operating junction temperature range for the STF40N60M2?

    The operating junction temperature range (Tj) is -55 to 150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:34A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:88mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STFW40N60M2
STFW40N60M2
MOSFET N-CH 600V 34A ISOWATT
STFI40N60M2
STFI40N60M2
MOSFET N-CH 600V 34A I2PAKFP

Similar Products

Part Number STF40N60M2 STF40N65M2 STFH40N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 34A (Tc) 32A (Tc) 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 88mOhm @ 17A, 10V 99mOhm @ 16A, 10V 88mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V 56.5 nC @ 10 V 57 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 100 V 2355 pF @ 100 V 2500 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 40W (Tc) 25W (Tc) 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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