STF3LN80K5
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STMicroelectronics STF3LN80K5

Manufacturer No:
STF3LN80K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 2A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The STF3LN80K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh K5 technology. This technology is based on a proprietary vertical structure that enhances power density and efficiency. The MOSFET is part of the MDmesh K5 series, known for its superior performance in high-voltage applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 800 V
ID (Drain Current) 2 A
RDS(on) (On-State Resistance) 2.75 Ω
PD (Power Dissipation) 20 W
VGS(th) (Threshold Voltage) 4 V @ 100 μA
Package TO-220FP

Key Features

  • High-voltage operation up to 800 V.
  • Low on-state resistance (RDS(on)) of 2.75 Ω.
  • High power density and efficiency due to MDmesh K5 technology.
  • TO-220FP package for good thermal performance and ease of use.
  • RoHS compliant.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • High-voltage industrial applications.
  • Aerospace and defense systems.
  • Renewable energy systems, such as solar and wind power.

Q & A

  1. What is the maximum drain-source voltage of the STF3LN80K5?

    The maximum drain-source voltage (VDS) is 800 V.

  2. What is the typical on-state resistance of the STF3LN80K5?

    The typical on-state resistance (RDS(on)) is 2.75 Ω.

  3. What is the maximum drain current of the STF3LN80K5?

    The maximum drain current (ID) is 2 A.

  4. What package type is the STF3LN80K5 available in?

    The STF3LN80K5 is available in the TO-220FP package.

  5. Is the STF3LN80K5 RoHS compliant?

    Yes, the STF3LN80K5 is RoHS compliant.

  6. What technology is used in the STF3LN80K5?

    The STF3LN80K5 uses MDmesh K5 technology.

  7. What are some common applications for the STF3LN80K5?

    Common applications include power supplies, motor control, high-voltage industrial applications, aerospace and defense systems, and renewable energy systems.

  8. What is the power dissipation capability of the STF3LN80K5?

    The power dissipation (PD) is 20 W.

  9. What is the threshold voltage of the STF3LN80K5?

    The threshold voltage (VGS(th)) is 4 V at 100 μA.

  10. Why is the MDmesh K5 technology beneficial?

    The MDmesh K5 technology enhances power density and efficiency, making it suitable for high-performance applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.25Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:2.63 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:102 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):20W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF3LN80K5 STF3N80K5 STF4LN80K5 STF7LN80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc) 2.5A (Tc) 3A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.25Ohm @ 1A, 10V 3.5Ohm @ 1A, 10V 2.6Ohm @ 1A, 10V 1.15Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 2.63 nC @ 10 V 9.5 nC @ 10 V 3.7 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 102 pF @ 100 V 130 pF @ 100 V 122 pF @ 100 V 270 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 20W (Tc) 20W (Tc) 20W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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