STF32NM50N
  • Share:

STMicroelectronics STF32NM50N

Manufacturer No:
STF32NM50N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N CH 500V 22A TO-220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF32NM50N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is renowned for its high efficiency and low on-resistance, making it suitable for the most demanding high-efficiency converters. Available in TO-220FP, TO-220, TO-247, and D²PAK packages, it offers versatility in design and application.

Key Specifications

Parameter Value Unit
Drain-source voltage (VDS) 500 V
Gate-source voltage (VGS) ± 25 V
Drain current (continuous) at TC = 25 °C (ID) 22 A
Drain current (continuous) at TC = 100 °C (ID) 13.86 A
Pulse drain current (IDM) 88 A
Total dissipation at TC = 25 °C (PTOT) 190 (TO-220FP: 35) W
Static drain-source on-resistance (RDS(on)) 0.13 Ω Ω
Gate threshold voltage (VGS(th)) 2-4 V V
Gate input resistance (Rg) 3.8 Ω Ω

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • High efficiency due to low on-resistance and gate charge
  • Available in TO-220FP, TO-220, TO-247, and D²PAK packages
  • ECOPACK® packages for environmental compliance

Applications

  • Switching applications
  • High-efficiency converters
  • Power management systems
  • Industrial and automotive power systems

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF32NM50N?

    The maximum drain-source voltage (VDS) is 500 V.

  2. What is the typical on-resistance (RDS(on)) of the STF32NM50N?

    The typical on-resistance (RDS(on)) is 0.13 Ω.

  3. What are the package options available for the STF32NM50N?

    The device is available in TO-220FP, TO-220, TO-247, and D²PAK packages.

  4. What is the maximum continuous drain current (ID) at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 22 A.

  5. What is the gate threshold voltage (VGS(th)) range?

    The gate threshold voltage (VGS(th)) range is 2-4 V.

  6. Is the STF32NM50N 100% avalanche tested?
  7. What is the total dissipation at 25 °C (PTOT) for the TO-220FP package?

    The total dissipation at 25 °C (PTOT) for the TO-220FP package is 35 W.

  8. What is the typical gate input resistance (Rg)?

    The typical gate input resistance (Rg) is 3.8 Ω.

  9. In which applications is the STF32NM50N commonly used?

    The STF32NM50N is commonly used in switching applications and high-efficiency converters.

  10. Does the STF32NM50N come in environmentally compliant packages?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:62.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1973 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$4.96
74

Please send RFQ , we will respond immediately.

Same Series
STP32NM50N
STP32NM50N
MOSFET N CH 500V 22A TO-220
STB32NM50N
STB32NM50N
MOSFET N CH 500V 22A D2PAK
STW32NM50N
STW32NM50N
MOSFET N CH 500V 22A TO-247

Similar Products

Part Number STF32NM50N STF30NM50N
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc) 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 11A, 10V 115mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62.5 nC @ 10 V 94 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1973 pF @ 50 V 2740 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 35W (Tc) 40W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

SMP100LC-200
SMP100LC-200
STMicroelectronics
THYRISTOR 200V 400A DO214AA
Z0409MF 1AA2
Z0409MF 1AA2
STMicroelectronics
TRIAC SENS GATE 600V 4A TO202
STF14NM50N
STF14NM50N
STMicroelectronics
MOSFET N-CH 500V 12A TO220FP
STM32F723ZET6
STM32F723ZET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32L496ZGT3
STM32L496ZGT3
STMicroelectronics
IC MCU 32BIT 1MB FLASH 144LQFP
STM32F207VET6
STM32F207VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32H7B3IIT6Q
STM32H7B3IIT6Q
STMicroelectronics
IC MCU 32BIT 2MB FLASH 176LQFP
TEA3718SDP
TEA3718SDP
STMicroelectronics
IC MOTOR DRVR BIPOLAR 16POWERDIP
VNQ810PTR-E
VNQ810PTR-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 28SO
LD39015M33R
LD39015M33R
STMicroelectronics
IC REG LINEAR 3.3V 150MA SOT23-5
L7809ABV
L7809ABV
STMicroelectronics
IC REG LINEAR 9V 1.5A TO220AB
LNBH23LQTR
LNBH23LQTR
STMicroelectronics
IC REG CONV SAT TV 1OUT 32QFN