STD5N60M2
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STMicroelectronics STD5N60M2

Manufacturer No:
STD5N60M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 3.5A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD5N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is characterized by its strip layout and improved vertical structure, which enhance its performance and efficiency. The STD5N60M2 is designed to operate at high voltages and currents, making it suitable for a variety of power management applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600 V
RDS(on) (Drain-Source On-Resistance)1.3 Ω (typical at VGS = 10 V, ID = 3.5 A)
ID (Drain Current)3.5 A
VGS (Gate-Source Voltage)±25 V
PD (Power Dissipation)45 W
PackageTO-252-3, DPAK (2 Leads + Tab), SC-63

Key Features

  • MDmesh™ M2 technology for improved performance and efficiency
  • High voltage rating of 600 V
  • Low on-resistance (RDS(on)) of 1.3 Ω (typical)
  • High current capability of 3.5 A
  • Compact TO-252-3, DPAK, and SC-63 packages
  • Enhanced switching performance

Applications

The STD5N60M2 is suitable for various power management and switching applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Motor Control
  • Power Factor Correction (PFC)
  • DC-DC Converters
  • High-Voltage Industrial and Automotive Systems

Q & A

  1. What is the maximum drain-source voltage of the STD5N60M2?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the typical on-resistance of the STD5N60M2?
    The typical on-resistance (RDS(on)) is 1.3 Ω at VGS = 10 V and ID = 3.5 A.
  3. What is the maximum drain current of the STD5N60M2?
    The maximum drain current (ID) is 3.5 A.
  4. What is the gate-source voltage range of the STD5N60M2?
    The gate-source voltage (VGS) range is ±25 V.
  5. In what packages is the STD5N60M2 available?
    The STD5N60M2 is available in TO-252-3, DPAK (2 Leads + Tab), and SC-63 packages.
  6. What technology is used in the STD5N60M2?
    The STD5N60M2 uses the MDmesh™ M2 technology.
  7. What are some typical applications of the STD5N60M2?
    Typical applications include Switch Mode Power Supplies (SMPS), Motor Control, Power Factor Correction (PFC), DC-DC Converters, and high-voltage industrial and automotive systems.
  8. What is the power dissipation rating of the STD5N60M2?
    The power dissipation rating (PD) is 45 W.
  9. Is the STD5N60M2 RoHS compliant?
    Yes, the STD5N60M2 is RoHS compliant.
  10. Where can I find detailed specifications for the STD5N60M2?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other authorized distributors like Mouser and LCSC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:211 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD5N60M2 STD7N60M2 STD6N60M2 STD5N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Tc) 5A (Tc) 4.5A (Tc) 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.7A, 10V 950mOhm @ 2.5A, 10V 1.2Ohm @ 2.25A, 10V 1.55Ohm @ 1.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 10 V 8.8 nC @ 10 V 8 nC @ 10 V 8.6 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±30V
Input Capacitance (Ciss) (Max) @ Vds 211 pF @ 100 V 271 pF @ 100 V 232 pF @ 100 V 375 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 45W (Tc) 60W (Tc) 60W (Tc) 45W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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