STD35NF06LT4
  • Share:

STMicroelectronics STD35NF06LT4

Manufacturer No:
STD35NF06LT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 35A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD35NF06LT4 is a high-performance N-Channel MOSFET produced by STMicroelectronics. This device is part of STMicroelectronics' STripFET II technology, which is designed to optimize power efficiency and minimize input capacitance. The MOSFET is packaged in a DPAK (TO-252) package, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
Maximum Drain-Source Voltage (Vds)60 V
Maximum Drain Current (Id)35 A
Maximum Power Dissipation (Pd)80 W
Maximum Gate-Source Voltage (Vgs)16 V
Maximum Junction Temperature (Tj)175 °C
Rise Time (tr)100 nS
Output Capacitance (Coss)305 pF
Maximum Drain-Source On-State Resistance (Rds)0.017 Ohm
PackageDPAK (TO-252)

Key Features

  • High Current Capability: The STD35NF06LT4 can handle up to 35 A of drain current, making it suitable for high-power applications.
  • Low On-State Resistance: With a maximum Rds of 0.017 Ohm, this MOSFET minimizes power losses and enhances efficiency.
  • High Voltage Rating: The device can withstand a maximum drain-source voltage of 60 V, ensuring robust performance in various power management scenarios.
  • STripFET II Technology: This technology optimizes the MOSFET's performance by reducing input capacitance and improving switching characteristics.

Applications

The STD35NF06LT4 is versatile and can be used in a wide range of applications, including:

  • Power Supplies: Suitable for high-power DC-DC converters and power supply units.
  • Motor Control: Ideal for motor drive applications due to its high current and low on-state resistance.
  • Switching Regulators: Used in switching regulators and buck converters for efficient power management.
  • Automotive Systems: Can be applied in automotive systems requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage of the STD35NF06LT4?
    The maximum drain-source voltage (Vds) is 60 V.
  2. What is the maximum drain current of the STD35NF06LT4?
    The maximum drain current (Id) is 35 A.
  3. What is the package type of the STD35NF06LT4?
    The package type is DPAK (TO-252).
  4. What is the maximum junction temperature of the STD35NF06LT4?
    The maximum junction temperature (Tj) is 175 °C.
  5. What technology is used in the STD35NF06LT4?
    The STD35NF06LT4 uses STMicroelectronics' STripFET II technology.
  6. What is the maximum power dissipation of the STD35NF06LT4?
    The maximum power dissipation (Pd) is 80 W.
  7. What is the rise time of the STD35NF06LT4?
    The rise time (tr) is 100 nS.
  8. What is the output capacitance of the STD35NF06LT4?
    The output capacitance (Coss) is 305 pF.
  9. What is the maximum drain-source on-state resistance of the STD35NF06LT4?
    The maximum drain-source on-state resistance (Rds) is 0.017 Ohm.
  10. In what types of applications is the STD35NF06LT4 commonly used?
    The STD35NF06LT4 is commonly used in power supplies, motor control, switching regulators, and automotive systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:17mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):80W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.65
263

Please send RFQ , we will respond immediately.

Similar Products

Part Number STD35NF06LT4 STD35NF06T4 STD30NF06LT4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 35A (Tc) 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 5V, 10V
Rds On (Max) @ Id, Vgs 17mOhm @ 17.5A, 10V 20mOhm @ 17.5A, 10V 28mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 4V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 4.5 V 60 nC @ 10 V 31 nC @ 5 V
Vgs (Max) ±16V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V 1300 pF @ 25 V 1600 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 80W (Tc) 80W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23

Related Product By Brand

NUCLEO-F303RE
NUCLEO-F303RE
STMicroelectronics
NUCLEO-64 STM32F303RE EVAL BRD
STPS3150UF
STPS3150UF
STMicroelectronics
DIODE SCHOTTKY 150V 3A SMBFLAT
STTH30AC06FP
STTH30AC06FP
STMicroelectronics
DIODE GEN PURP 600V 30A TO220
BD678A
BD678A
STMicroelectronics
TRANS PNP DARL 60V 4A SOT32-3
STD10NF30
STD10NF30
STMicroelectronics
MOSFET N-CHANNEL 300V 10A DPAK
STL120N4F6AG
STL120N4F6AG
STMicroelectronics
MOSFET N-CH 40V 55A POWERFLAT
STGWA19NC60HD
STGWA19NC60HD
STMicroelectronics
IGBT 600V 52A 208W TO247
STR912FAW46X6T
STR912FAW46X6T
STMicroelectronics
IC MCU 32BIT 1MB FLASH 128LQFP
M68AW512ML70ND6
M68AW512ML70ND6
STMicroelectronics
IC SRAM 8MBIT PARALLEL 44TSOP II
M27C4002-80C6
M27C4002-80C6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 44PLCC
VNS3NV04-E
VNS3NV04-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
LD1117AS25TR
LD1117AS25TR
STMicroelectronics
IC REG LINEAR 2.5V 1A SOT223