STD30N10F7
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STMicroelectronics STD30N10F7

Manufacturer No:
STD30N10F7
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 32A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD30N10F7 is an N-channel Power MOSFET produced by STMicroelectronics, utilizing the advanced STripFET F7 technology. This technology features an enhanced trench gate structure, which significantly reduces on-state resistance, internal capacitance, and gate charge. These improvements result in faster and more efficient switching characteristics, making the STD30N10F7 suitable for a variety of high-performance applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 100 V
RDS(on) (On-State Resistance) 0.02 Ω
ID (Drain Current) 35 A
Ptot (Total Power Dissipation) - -
TJ (Junction Temperature) -150 to 175 °C
Package PowerFLAT 5x6, TO-220, etc. -
RoHS Compliance Ecopack2 -

Key Features

  • Among the lowest RDS(on) on the market, ensuring minimal power loss during operation.
  • Excellent figure of merit (FoM) for high efficiency and performance.
  • Low Crss/Ciss ratio for enhanced EMI immunity.
  • High avalanche ruggedness, providing robustness against transient conditions.
  • Enhanced trench gate structure for faster and more efficient switching.

Applications

The STD30N10F7 is suitable for various industrial and commercial applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Switch-mode power supplies.
  • High-frequency switching applications.
  • Automotive and industrial power management systems.

Q & A

  1. What is the typical on-state resistance of the STD30N10F7?

    The typical on-state resistance (RDS(on)) of the STD30N10F7 is 0.02 Ω.

  2. What is the maximum drain current for the STD30N10F7?

    The maximum drain current (ID) for the STD30N10F7 is 35 A.

  3. What is the maximum drain-source voltage for the STD30N10F7?

    The maximum drain-source voltage (VDS) for the STD30N10F7 is 100 V.

  4. What technology does the STD30N10F7 use?

    The STD30N10F7 uses STMicroelectronics' STripFET F7 technology.

  5. What are the benefits of the enhanced trench gate structure in the STD30N10F7?

    The enhanced trench gate structure reduces on-state resistance, internal capacitance, and gate charge, leading to faster and more efficient switching.

  6. Is the STD30N10F7 RoHS compliant?
  7. What are some common applications for the STD30N10F7?

    The STD30N10F7 is commonly used in power supplies, DC-DC converters, motor control systems, and high-frequency switching applications.

  8. What is the operating temperature range for the STD30N10F7?

    The operating temperature range for the STD30N10F7 is -150°C to 175°C (junction temperature).

  9. What package options are available for the STD30N10F7?

    The STD30N10F7 is available in packages such as PowerFLAT 5x6 and TO-220.

  10. Is the STD30N10F7 still in production?

    No, the STD30N10F7 is obsolete and no longer manufactured. However, substitutes may be available.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:32A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:24mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1270 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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